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    13.
    发明专利
    未知

    公开(公告)号：DE69702745T2

    公开(公告)日：2000-12-07

    申请号：DE69702745

    申请日：1997-03-04

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MONTANINI PIETRO ,  FERRERA MARCO

    IPC: G01L9/08 ,  G01L9/00 ,  H01L29/84

    Abstract: The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure.

    14.
    发明专利
    未知

    公开(公告)号：DE69702745D1

    公开(公告)日：2000-09-14

    申请号：DE69702745

    申请日：1997-03-04

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MONTANINI PIETRO ,  FERRERA MARCO

    IPC: G01L9/08 ,  G01L9/00 ,  H01L29/84

    Abstract: The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure.

    17.
    发明专利
    未知

    公开(公告)号：DE69726718D1

    公开(公告)日：2004-01-22

    申请号：DE69726718

    申请日：1997-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  FERRERA MARCO

    IPC: G01P9/04 ,  B81B3/00 ,  G01C19/56 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L41/08

    Abstract: To increase the sensitivity of the sensor, the movable mass (40) forming the seismic mass is formed starting from the epitaxial layer (13) and is covered by a weighting region of tungsten (26c) which has high density. To manufacture it, buried conductive regions (2) are formed in the substrate (1); then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions (9a-9d) are formed on the buried conductive regions (2) so as to cover them partially; the epitaxial layer (13) is then grown, using a nucleus region; a tungsten layer (26) is deposited and defined and, using a silicon carbide layer (31) as mask, the suspended structure (40) is defined; finally the sacrificial region is removed, forming an air gap (38).

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