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    LOW NOISE PNP BIPOLAR TRANSISTOR AND ITS PREPARATION
    11.
    发明专利
    LOW NOISE PNP BIPOLAR TRANSISTOR AND ITS PREPARATION 失效

    公开(公告)号：JPH07231000A

    公开(公告)日：1995-08-29

    申请号：JP25413794

    申请日：1994-09-26

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VILLA FLAVIO

    IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/732

    Abstract: PURPOSE: To obtain a transistor which is designed so as to reduce noise by a flexible solving method which can meet various requirements and to guarantee a high breakdown voltage. CONSTITUTION: A low-noise bipolar transistor has a cut-off region 47 which surrounds an emitter region 45 horizontally in its surface part. The cut-off region has conductivity, with which the surface part of the transistor is actually turned off and, by the region, the transistor operates mainly in a bulk part. The cut-off region is composed of an N -type high impurity concentration base region 47 provided between an emitter region 45 and a collector region 49.

    LOW NOISE BIPOLAR TRANSISTOR
    12.
    发明专利
    LOW NOISE BIPOLAR TRANSISTOR 失效

    公开(公告)号：JPH07221119A

    公开(公告)日：1995-08-18

    申请号：JP25413894

    申请日：1994-09-26

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VILLA FLAVIO

    IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/732

    Abstract: PURPOSE: To provide a transistor which is designed to reduce noise based on a revolving method capable of complying with various requirements and guarantee high yield voltage. CONSTITUTION: A low noise bipolar transistor is provided with a cut-off region 38 which covers an emitter area with a predetermined spacing from the lateral direction in the surface portion. The cut-off region has the conductivity which turns off actually the surface portion of the transistor, which makes it possible for the transistor to operate mainly in the bulk portion. The cut-off region is formed with a P ring astride a P type well range 35 and an epitaxial layer 32.

    14.
    发明专利
    未知

    公开(公告)号：DE60032772T2

    公开(公告)日：2007-11-08

    申请号：DE60032772

    申请日：2000-09-27

    Applicant: ST MICROELECTRONICS SRL

    Inventor： BARLOCCHI GABRIELE ,  VILLA FLAVIO

    IPC: B81B3/00 ,  B01L3/00 ,  B01L7/00 ,  B81C1/00

    Abstract: Integrated microreactor, formed in a monolithic body (50) and including a semiconductor material region (2, 23) and an insulating layer (25, 30); a buried channel (21) extending in the semiconductor material region; a first and a second access trench (40a, 40b) extending in the semiconductor material region (2, 23) and in the insulating layer (25, 30), and in communication with the buried channel (21); a first and a second reservoir (41a, 41b) formed on top of the insulating layer (25, 30) and in communication with the first and the second access trench; a suspended diaphragm (45) formed by the insulating layer (25, 30), laterally to the buried channel (21); and a detection electrode (28), supported by the suspended diaphragm (45), above the insulating layer (25, 30), and inside the second reservoir.

    15.
    发明专利
    未知

    公开(公告)号：DE60032113T2

    公开(公告)日：2007-06-28

    申请号：DE60032113

    申请日：2000-02-11

    Applicant: ST MICROELECTRONICS SRL

    Inventor： MASTROMATTEO UBALDO ,  VILLA FLAVIO ,  BARLOCCHI GABRIELE

    IPC: B01L7/00 ,  A01G9/02 ,  B01J19/00 ,  B01L3/00 ,  B26D1/24 ,  B29C53/04 ,  B29C61/02 ,  B32B3/28 ,  B32B7/02 ,  B32B37/14 ,  B44C3/04 ,  B44C3/08 ,  B44C5/06 ,  B44F1/14

    Abstract: The integrated device (1) for microfluid thermoregulation comprises a semiconductor material body (2) having a surface (3); a plurality of buried channels (4) extending in the semiconductor material body (2) at a distance from the surface (3) of the semiconductor material body (2); inlet and outlet ports (5a, 5b) extending from the surface (3) of the semiconductor material body (2) as far as the ends (4a, 4b) of the buried channels (4) and being in fluid connection with the buried channels; and heating elements (10) on the semiconductor material body. Temperature sensors (15) are arranged between the heating elements (10) above the surface (3) of the semiconductor material body (2).

    16.
    发明专利
    未知

    公开(公告)号：DE60023464T2

    公开(公告)日：2006-07-20

    申请号：DE60023464

    申请日：2000-06-05

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VILLA FLAVIO ,  MASTROMATTEO UBALDO ,  BARLOCCHI GABRIELE ,  CATTANEO MAURO

    IPC: B01J19/00 ,  B01L3/00 ,  B01L7/00 ,  B81B3/00

    Abstract: The microreactor is completely integrated and is formed by a semiconductor body (2) having a surface (4) and housing at least one buried channel (3) accessible from the surface of the semiconductor body (2) through two trenches (21a, 21b). A heating element (10) extends above the surface (4) over the channel (3) and a resist region (18) extends above the heating element and defines an inlet reservoir and an outlet reservoir (19, 20). The reservoirs (19, 20) are connected to the trenches (21a, 21b) and have, in cross-section, a larger area than the trenches. The outlet reservoir (20) has a larger area than the inlet reservoir (19). A sensing electrode (12) extends above the surface (4) and inside the outlet reservoir (20).

    17.
    发明专利
    未知

    公开(公告)号：DE69630292D1

    公开(公告)日：2003-11-13

    申请号：DE69630292

    申请日：1996-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VILLA FLAVIO ,  FERRARI PAOLO ,  VIGNA BENEDETTO

    IPC: B81B1/00 ,  B81C1/00 ,  G01N27/12 ,  H01L21/764 ,  H01L21/00 ,  H01L21/762 ,  G01L9/00

    Abstract: The chemoresistive gas sensor comprises a heating element (12) integrated in a dedicated SOI substrate (100) having an air gap (3) in the intermediate oxide layer (2) between two wafers (1, 4) of monocrystalline silicon; the sensitive element (25) of tin oxide is formed over the heating element and separated from it by a dielectric insulating and protective layer. A trench (28), formed at the end of the fabrication of the device, extends from the surface (6) of the wafer (4) in which the heating element (12) is integrated, up to the air gap (3) to mechanically separate and insulate the sensitive element (25) from the rest of the chip, and so improve the mechanical characteristics, sensitivity and response of the sensor.

    19.
    发明专利
    未知

    公开(公告)号：DE69626972D1

    公开(公告)日：2003-04-30

    申请号：DE69626972

    申请日：1996-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： FERRARI PAOLO ,  FORONI MARIO ,  VIGNA BENEDETTO ,  VILLA FLAVIO

    IPC: G01P15/02 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01P15/00

    Abstract: The acceleration sensor is formed in a monocrystalline silicon wafer (4) forming part of a dedicated SOI substrate (50) presenting a first (1) and second (4) monocrystalline silicon wafer separated by an insulating layer (2) having an air gap (3). A well (15) is formed in the second wafer (4), over the air gap (3), and is subsequently trenched up to the air gap to release the monocrystalline silicon mass (23) forming the movable mass (24) of the sensor; the movable mass (24) has two numbers of movable electrodes (28a, 28b) facing respective pluralities of fixed electrodes (29a, 29b). In the idle condition, each movable electrode (28) is separated by different distances from the two fixed electrodes (29) facing the movable electrode.

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