公开(公告)号：JP2001135446A

公开(公告)日：2001-05-18

申请号：JP2000279887

申请日：2000-09-14

Applicant: ST MICROELECTRONICS SRL

Inventor： MURARI BRUNO ,  MASTROMATTEO UBALDO ,  VIGNA BENEDETTO

IPC: G11B5/60 ,  G11B21/10 ,  H01L21/60 ,  H01L23/34 ,  H01R4/02 ,  H01R43/02

Abstract: PROBLEM TO BE SOLVED: To provide a method of electrically and/or mechanically connecting components of a microminiature electronic system to one another easily. SOLUTION: A method of mechanically and/or electrically connecting components of a microminiature electronic system to one another which comprises at least one first component (5a, 5b, 50a-50d; 70) and one second component (2; 70), the method comprising the steps of : forming at least one local Joule effect microheater (R) at each soldering point between the first component and the second component in one component of said first and second components; and supplying said microheater with electric energy (V, 13a, 13b; 78, 79) and soldering the first and second components at the soldering point by using heat generated due to Joule effect with the microheater.

公开(公告)号：JPH11251320A

公开(公告)日：1999-09-17

申请号：JP33057398

申请日：1998-11-20

Applicant: ST MICROELECTRONICS SRL

Inventor： MASTROMATTEO UBALDO ,  MURARI BRUNO

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/48

Abstract: PROBLEM TO BE SOLVED: To provide a method for enabling a contact pad arranged on the back surface of a wafer. SOLUTION: A process is provided with a stage for forming a through-hole 12 from the back surface of the main body of a semiconductor material, the stage for forming a hole insulation layer 15 composed of an electric insulation material for covering the side wall of the through-hole, the stage for forming a through contact area 16 composed of a conductive material for covering the hole insulation layer inside the hole, the stage for forming a protective layer for covering the hole contact area, and the stage for forming a connection structure 25 extended to the peak part of the upper surface 5 of the main body on or between the through contact area 16 and an electronic constituting element 3.

公开(公告)号：JPH1183418A

公开(公告)日：1999-03-26

申请号：JP14780098

申请日：1998-05-28

Applicant: ST MICROELECTRONICS SRL

Inventor： SAX HERBERT ,  MURARI BRUNO ,  VILLA FLAVIO ,  VIGNA BENEDETTO ,  FERRARI PAOLO

IPC: G01B7/00 ,  B60R16/02 ,  G01D5/14 ,  G01V3/08 ,  H01H36/00

Abstract: PROBLEM TO BE SOLVED: To provide a two dimensional sensor particularly for car, which comprises a permanent magnet moving while facing plural sensor elements to detect a magnetic field. SOLUTION: A permanent magnet 3 is freely movable on a plane along the first and second directions, which do not coincide with each other, and is fixed to a control lever so as to freely rotate around the third direction perpendicular to the plane as the center. The permanent magnet 3 is freely movable relative to an accumulation device 2 composed of the first group partitioned along the first direction, the second group partitioned along the second direction and a sensor element 10 of the third group to detect an angle position of the permanent magnet 3. An electronic equipment integrated with the sensor unit 10 produces a code relative to a position movement of the permanent magnet 3, and generates a control signal corresponding to a required function.

公开(公告)号：JPH1173613A

公开(公告)日：1999-03-16

申请号：JP19083098

申请日：1998-07-06

Applicant: ST MICROELECTRONICS SRL

Inventor： MURARI BRUNO ,  VIGNA BENEDETTO ,  FERRARI PAOLO

IPC: G11B5/31 ,  G11B5/39

Abstract: PROBLEM TO BE SOLVED: To provide an electromagnetic head formed by using a magnetoresistance element having a relatively simple structure in which a magnetic flux change is sufficiently interlinked with the magnetoresistance element and having high sensitivity. SOLUTION: This electromagnetic head has a magnetic core 205 constituting a magnetic circuit shielded by a first gap 230 for magnetical coupling to the memory cell of a memory device and a second gap 235 for separating the first and second magnetic poles 240, 245 of the magnetic core 205 and a magnetoresistance means 250 arranged in the region of the second gap 235 for the purpose of reading the memory cell. The magnetic reluctance means 250 is connected to the magnetic core 205 corresponding to the first magnetic pole 240 and the second magnetic pole 245 so as to be connected into the magnetic circuit.

公开(公告)号：JPH11345468A

公开(公告)日：1999-12-14

申请号：JP12604599

申请日：1999-05-06

Applicant: ST MICROELECTRONICS SRL

Inventor： MASTROMATTEO UBALDO ,  MURARI BRUNO ,  VIGNA BENEDETTO ,  ZERBINI SARAH

IPC: G11B5/596 ,  G11B5/55 ,  G11B5/58 ,  G11B21/10 ,  H02N1/00

Abstract: PROBLEM TO BE SOLVED: To manufacture a read/write unit without generating offset and residual stress as much as possible. SOLUTION: An integrated device 54 having a micro-actuator 10 is formed on a semiconductor material wafer 29, and immovable structures 45, 47 consisting of organic material are formed on the wafer 29, a fixing flange 51 integrated with the micro-actuator 10 and an electric connection part for connecting the integrated device 54 to a read/write head are formed simultaneously, a converter 6 supporting the read/write head is connected to the fixing flange 51, the electric connection part is connected to the read/write head, and the wafer is cut to a dice, an actuator unit is connected to a suspension, and the immovable structures 45, 47 are removed.

公开(公告)号：JPH08274135A

公开(公告)日：1996-10-18

申请号：JP23427495

申请日：1995-09-12

Applicant: ST MICROELECTRONICS SRL

Inventor： MURARI BRUNO ,  TOSCANI ROBERTO ,  MARCHIO' FABIO ,  STORTI SANDRO

IPC: H01L21/66 ,  G01R31/28 ,  H01L21/822 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H05K1/02 ,  H05K1/03 ,  H05K3/00

Abstract: PROBLEM TO BE SOLVED: To obtain a new manufacturing method of an electronic circuit, which can recognize defective circuit simply, economically and quickly in the electric inspection. SOLUTION: On a semiconductor substrate 1, an electronic circuit and electric connecting lines 12 used for the diagnosis purpose are integrated on the semiconductor substrate 1 under the regulary separated pattern by scribing lines 11 in the single structure.

公开(公告)号：JP2001150397A

公开(公告)日：2001-06-05

申请号：JP2000276846

申请日：2000-09-12

Applicant: ST MICROELECTRONICS SRL

Inventor： MURARI BRUNO ,  VIGNA BENEDETTO ,  MASTROMATTEO UBALDO

IPC: B81C1/00 ,  B81B3/00 ,  B81B5/00 ,  G11B5/53 ,  G11B7/12 ,  G11B21/10 ,  H02N1/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing for a floating member for electrically connecting two mutually movable parts of a micro-mechanism. SOLUTION: This method for manufacturing a floating member for electrically connecting two mutually movable parts of a micro-mechanism comprises a process for forming a sacrifice material layer, a process for electrically forming a connecting member on the sacrifice material layer, and a process for electrically removing the sacrifice layer under the connecting member, and the sacrifice material layer is a thin film having at least one adhesive surface attachable to a surface of the micro-mechanism in a dry state.

公开(公告)号：JPH11102893A

公开(公告)日：1999-04-13

申请号：JP21667698

申请日：1998-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： MURARI BRUNO ,  FERRARI PAOLO ,  VIGNA BENEDETTO

IPC: H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  G01L1/18 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  H01L21/3063 ,  H01L21/764 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To reduce the cost of manufacturing without the possibility of breaking an erected structure by a method, wherein a sacrificial region of porous material is formed in the main body of single-crystal semiconductor material, and the sacrificial region is removed through the aperture of the main body. SOLUTION: A part of a substrate 2 on the lower part of the aperture of a mask is converted into porous silicon from single-crystal silicon when anodic oxidation treatment is performed, and a porous sacrificial region is formed. subsequently, the mask is removed, and a P-type epitaxial layer 7 is formed on a wafer. The epitaxial layer 7 is plasma etched using a carbide mask 25 having the aperture which is slightly larger than the resist mask, and a groove 27 extending to the porous sacrificial region from the surface of the epitaxial layer 7 is formed. At this time, etching is on the porous sacrificial region stopped automatically. The silicon porous sacrificial region is oxidized through the groove 27, and the first oxidative sacrificial region 28 is formed. Lastly, the oxidative sacrificial region 28 is removed in hydrofluoric acid, and after the mask 25 has been removed, a erected structure 30 is obtained on a gap 31 and is separated by groove 32.

公开(公告)号：JPH07176004A

公开(公告)日：1995-07-14

申请号：JP40507490

申请日：1990-12-21

Applicant: ST MICROELECTRONICS SRL

Inventor： MURARI BRUNO ,  ROSSI DOMENICO ,  SAVINO PIERANTONIO

IPC: G11B5/027 ,  G11B5/02 ,  H03F3/181 ,  H03F3/343 ,  H03F3/45

Abstract: PURPOSE: To provide a preamplifier capable of being directly connected to a magnetic head and eliminating the need of the presence of especially a reference voltage source different from a power supply voltage or the capacitor having a high value. CONSTITUTION: Differential circuits T5 and T6 provided with an input stage provided with the differential circuit and a transistor output stage T2 are provided. A differential stage is provided with an intrinsic offset voltage and can be grounded and directly connected to the magnetic head L. Transistors T5 and T6 form the differential circuit provided with a different bias current so as to reduce input equivalent noise. The magnetic head L is connected to the base terminal of the transistor T5 and the base terminal of the transistor T6 is connected to the intermediate point of a pair of resistors R1 and R2 serially connected with each other between the output stage T2 and the line of a reference voltage. In the form, the differential stages T5 and T6 bias output by the offset voltage without the need of additional components for the purpose.

公开(公告)号：WO2007032032A8

公开(公告)日：2007-10-04

申请号：PCT/IT2005000529

申请日：2005-09-16

Applicant: ST MICROELECTRONICS SRL ,  MURARI BRUNO ,  RICOTTI GIULIO ,  DELLA TORRE LUIGI ,  VITALI ANDREA LORENZO

Inventor： MURARI BRUNO ,  RICOTTI GIULIO ,  DELLA TORRE LUIGI ,  VITALI ANDREA LORENZO

IPC: G01L1/02 ,  G01L9/00

CPC classification number: G01L9/0054 ,  G01L1/02 ,  G01L5/225 ,  G01L9/0045 ,  G01L9/0089 ,  G01L19/0645 ,  G01L19/146

Abstract: In a pressure sensor (35), a pressure-sensor element (10) has a monolithic body (12) of semiconductor material, and a first main face (12a) and a second main face (12b) acting on which is a stress resulting from a pressure (P) the value of which is to be determined; and a package (36) encloses the pressure-sensor element (10). The package (36) has an inner chamber (37) containing liquid material (38), and the pressure-sensor element (10) is arranged within the inner chamber (37) in such a manner that the first and second main faces (12a, 12b) are both in contact with the liquid material (38). In particular, the liquid material is a silicone gel.

Abstract translation: 在压力传感器（35）中，压力传感器元件（10）具有半导体材料的整体（12），并且作用于其上的应力产生的第一主面（12a）和第二主面（12b） 从压力（P）来确定其值; 并且包装（36）包围压力传感器元件（10）。 包装（36）具有容纳液体材料（38）的内室（37），并且压力传感器元件（10）以这样的方式设置在内室（37）内，使得第一和第二主面 ，12b）均与液体材料（38）接触。 特别地，液体材料是硅胶。