中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

45 records (took 0.034 seconds)

    Integrated angular speed sensor device and production method thereof
    13.
    发明公开
    Integrated angular speed sensor device and production method thereof 失效
    Integrierter Winkelgeschwindigkeitssensor und Verfahren zu seiner Herstellung

    公开(公告)号：EP0911606A1

    公开(公告)日：1999-04-28

    申请号：EP97830537.3

    申请日：1997-10-23

    Applicant: STMicroelectronics S.r.l.

    Inventor： Ferrari, Paolo ,  Vigna, Benedetto ,  Foroni, Mario ,  Ferrera, Marco ,  Montanini, Pietro

    IPC: G01C19/56

    CPC classification number: G01C19/574 ,  G01C19/5769 ,  G01P15/0802 ,  H01L21/76202 ,  H01L21/764

    Abstract: The angular speed sensor comprises a pair of mobile masses (2a, 2b) which are formed in the epitaxial layer (37) and are anchored to one another and to the remainder of the device by anchorage elements; the mobile masses are symmetrical with one another, and have mobile excitation electrodes (6a) which are intercalated with respective fixed excitation electrodes (7a 1 , 7a 2 ) and mobile detection electrodes (6b) which are intercalated with fixed detection electrodes (7b 1 , 7b 2 ). The mobile and fixed excitation electrodes extend in a first direction and the mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

    Abstract translation: 角速度传感器包括一对移动质量块（2a，2b），它们形成在外延层（37）中，并通过锚定元件相互锚定并固定到装置的其余部分; 移动质量彼此对称，并且具有插入有固定的检测电极（7b1,7b2）的固定激励电极（7a1,7a2）和移动检测电极（6b）的移动激励电极（6a）。 移动和固定激励电极沿第一方向延伸，并且移动和固定检测电极在垂直于第一方向的第二方向上延伸并且设置在平行于装置表面的单个平面上。

    Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced
    20.
    发明公开
    Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced 失效
    一种用于制造其以这样的方式制造高灵敏度的积分的加速度计和陀螺仪传感器和传感器的方法

    公开(公告)号：EP0895090A1

    公开(公告)日：1999-02-03

    申请号：EP97830407.9

    申请日：1997-07-31

    Applicant: STMicroelectronics S.r.l.

    Inventor： Ferrari, Paolo ,  Vigna, Benedetto ,  Montanini, Pietro ,  Ferrera, Marco

    IPC: G01P15/08 ,  G01P15/125

    CPC classification number: H01L21/764 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00246 ,  B81C2201/0109 ,  B81C2201/0177 ,  B81C2203/0735 ,  B81C2203/0778 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/76202

    Abstract: To increase the sensitivity of the sensor, the movable mass (40) forming the seismic mass is formed starting from the epitaxial layer (13) and is covered by a weighting region of tungsten (26c) which has high density. To manufacture it, buried conductive regions (2) are formed in the substrate (1); then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions (9a-9d) are formed on the buried conductive regions (2) so as to cover them partially; the epitaxial layer (13) is then grown, using a nucleus region; a tungsten layer (26) is deposited and defined and, using a silicon carbide layer (31) as mask, the suspended structure (40) is defined; finally the sacrificial region is removed, forming an air gap (38).

    Abstract translation: 为了提高传感器的灵敏度，在形成振动质量运动质量块（40）形成由具有高密度的外延层（13）和由钨（26C）的加权区域覆盖开始。 为了制造它，掩埋的导电区域（2）在基片（1）形成; 然后，在在Sametime，牺牲区域在可动质量将要形成与氧化物绝缘区域（图9A-9D）是在掩埋的导电区域形成的区域（2）形成，以覆盖它们的部分; 然后在外延层（13）上生长，使用核区; 钨层（26）沉积和定义，并使用碳化硅层（31）作为掩模，对悬挂结构（40）所定义; 最后牺牲区域被移除，在空气间隙（38）形成。

Patent Agency Ranking