Abstract:
The semiconductor inertial sensor (30) is formed by a rotor element (38) and a stator element (39) electrostatically coupled together. The rotor element (38) is formed by a suspended mass (40) and by a plurality of mobile electrodes (41) extending from the suspended mass (40). The stator element (39) is formed by a plurality of fixed electrodes (42) facing respective mobile electrodes (41). The suspended mass (40) is supported by elastic suspension elements (45). The suspended mass (40) has a first, larger, thickness (t1 + t2), and the elastic suspension elements (45) have a second thickness (t1), smaller than the first thickness.
Abstract:
Micro-electro-mechanical structure formed by a substrate (41) of semiconductor material and a suspended mass (10, 20) extending above the substrate (41) and separated therefrom by an air gap (55). An insulating region (23, 24) of a first electrically insulating material extends through the suspended mass (10, 20) and divides it into at least one first electrically insulated suspended region and one second electrically insulated suspended region (10a, 10b, 20a, 20b). A plug element (46) of a second electrically insulating material different from the first electrically insulating material is formed underneath the insulating region (23, 24) and constitutes a barrier between the insulating region and the air gap (55) for preventing removal of the insulating region during fabrication, when an etching agent is used for removing a sacrificial layer and forming the air gap.
Abstract:
A rotational micro-electro-mechanical structure includes a stator (21), having a plurality of stator electrodes (33, 34), and a rotor (23), which is rotatable with respect to the stator (21) about an axis of relative rotation (A) and has a plurality of rotor electrodes (30), the stator electrodes (33, 34) and the rotor electrodes (30) being comb-fingered; moreover, at least a first group (20a) of stator electrodes (33, 34) and rotor electrodes (30) are parallel to a first plane (P 1 ) that includes the axis of relative rotation (A).
Abstract:
A micro-electro-mechanical device (20) formed by a body (4) of semiconductor material having a thickness and defining a mobile part (23, 24, 31) and a fixed part (3, 25, 30). The mobile part is formed by a mobile platform (23), supporting arms (31) extending from the mobile platform to the fixed part (3, 25, 30), and by mobile electrodes (24) fixed to the mobile platform. The fixed part has fixed electrodes (25) facing the mobile electrodes (24), a first biasing region (3) fixed to the fixed electrodes, a second biasing region (30) fixed to the supporting arms (31), and an insulation region (6) of insulating material extending through the entire thickness of the body (4). The insulation region (6) insulates electrically at least one between the first and the second biasing regions (3, 30) from the rest of the fixed part.
Abstract:
A read/write assembly for magnetic hard disks includes at least: one supporting element (5, 8); one read/write (R/W) transducer (6); one micro-actuator (10), set between the R/W transducer (6) and the supporting element (5, 8); one electrical-connection structure (11) for connection to a remote device carried by the supporting element (5,8) and connected to the R/W transducer (6) and to the micro-actuator (10) In addition, a protective structure (15), set so as to cover the micro-actuator (10) is made of a single piece with the electrical-connection structure (11).
Abstract:
A process for the fabrication of devices that integrate protected microstructures, comprising the following steps: forming, in a body (1) of semiconductor material, at least one microstructure (2) having at least one first portion (3) and one second portion (4) which are relatively mobile with respect to one another and are separated from one another by at least one gap region (14), which is accessible through a face (6) of the body (1); and sealing the gap (14). The sealing step includes depositing on the face (6) of the body (1) a layer (15) of protective material, in such a way as to close the gap region (14), the protective layer being such as to enable relative motion between the first portion (3) and the second portion (4) of the microstructure (2).
Abstract:
The electrical connection structure (15) comprises connection elements (25) which electrically connect a movable part (3) to a fixed part (4) of a microelectromechanical device, for example a microactuator (23). The movable part (3) and fixed part (4) are separated by trenches (6) and are mechanically connected by spring elements (12) which determine the torsional rigidity of the microelectromechanical device, together with the connection elements (25). Each connection element (25) is formed by more sub-arms (26) connected in parallel and having a common movable anchorage region (26a), anchored to the movable part (3), and a common fixed anchorage region (26b), anchored to the fixed part (5), thereby the mechanical resistance of the connection elements (25) is negligible. The sub-arms (26) have a width (W) equal to a submultiple of the width necessary in case of a single connection element for the latter to have a preset electrical resistance, determined in the design; namely, the width of the sub-arms (26) is equal to the width of the single connection element divided by the number of sub-arms.
Abstract:
A microelectromechanical structure (40) includes a rotor element (22) having a barycentric axis (G) and suspended regions (25) arranged a distance with respect to the barycentric axis. The rotor element (22) is supported and biased via a suspension structure (30, 45, 49) having a single anchoring portion (49) extending along the barycentric axis (G). The single anchoring portion (49; 73; 92) is integral with a body (41) of semiconductor material on which electric connections (50a) are formed.