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    A full-swing wordline driving circuit for a nonvolatile memory
    18.
    发明公开
    A full-swing wordline driving circuit for a nonvolatile memory 有权
    全电压摆幅字线驱动器的非易失性存储器

    公开(公告)号：EP1473738A1

    公开(公告)日：2004-11-03

    申请号：EP03425264.3

    申请日：2003-04-30

    Applicant: STMicroelectronics S.r.l.

    Inventor： Vimercati, Daniele ,  Schippers, Stefan ,  Mirichigni, Graziano ,  Villa, Corrado

    IPC: G11C16/08 ,  G11C8/08

    CPC classification number: G11C8/08 ,  G11C16/08

    Abstract: A circuit (300) is proposed for driving a memory line (110) controlling at least one memory cell (105) of a non-volatile memory device (100), the circuit being responsive to a first and a second selection signals, each one suitable to assume a first logic value or a second logic value, wherein the circuit includes a first level shifter (120s) for converting the first selection signal into a first operative signal and a second level shifter (120g) for converting the second selection signal into a second operative signal, each level shifter including first shifting means (210s, 210g) for shifting one of the logic values of the corresponding selection signal to a first bias voltage, and a selector (140) for applying the first operative signal or a second bias voltage to the memory line according to the second operative signal; in the circuit of the invention each level shifter further includes second shifting means (305s, 305g) for shifting another of the logic values of the corresponding selection signal to the second bias voltage.

    Abstract translation: 一种电路（300）提出了一种用于驱动控制的非易失性存储器装置（100）中的至少一个存储单元（105）的存储器线（110），该电路响应于第一和第二选择信号，每一个 适合于采用第一逻辑值，或第二逻辑值，worin电路包括用于将第一选择信号转换成第一操作信号和用于第二选择信号转换为第二电平移位器（120克）第一电平移位器（120秒） 的第二操作信号，各电平移位器包括用于移动相应的选择信号的逻辑值中的一个到第一偏置电压的第一移位装置（210S，210克），以及用于将所述第一操作信号或第二选择器（140） 偏置电压施加到所述存储器线gemäß到所述第二操作信号; 在发明的电路中的每个电平移位器还包括第二移动装置（305S，305克），用于另一个相应的选择信号的逻辑值的转移到第二偏置电压。

    A non-volatile memory device
    20.
    发明公开
    A non-volatile memory device 有权
    NichtflüchtigeSpeicherannnung

    公开(公告)号：EP1345236A1

    公开(公告)日：2003-09-17

    申请号：EP02425152.2

    申请日：2002-03-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Bernardi, Oreste ,  Redaelli, Marco ,  Villa, Corrado

    IPC: G11C16/10

    CPC classification number: G11C16/10 ,  G11C2216/20 ,  G11C2216/22

    Abstract: A non-volatile memory device (120) is proposed. The non-volatile memory device includes a flash memory (205) and means (225) for executing external commands, the external commands including a first subset of commands for accessing the flash memory directly; the memory device further includes a programmable logic unit (245) and means (250) for storing program code for the logic unit, the external commands including a second subset of at least one command for causing the logic unit to process information stored in at least one portion of the flash memory under the control of the program code.

    Abstract translation: 提出了一种非易失性存储器件（120）。 非易失性存储器件包括用于执行外部命令的闪速存储器（205）和装置（225），所述外部命令包括用于直接访问闪速存储器的第一命令子集; 所述存储装置还包括可编程逻辑单元（245）和用于存储所述逻辑单元的程序代码的装置（250），所述外部命令包括用于使所述逻辑单元处理至少存储的信息的至少一个命令的第二子集 一部分闪存在程序代码的控制之下。

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