中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

36 records (took 0.036 seconds)

    Manufacturing method and integrated piezoresistive pressure sensor having a diaphragm of polycristalline semiconductor material
    11.
    发明公开
    Manufacturing method and integrated piezoresistive pressure sensor having a diaphragm of polycristalline semiconductor material 失效
    制造方法以及具有多晶半导体材料构成的隔膜集成压阻式压力传感器

    公开(公告)号：EP0890998A1

    公开(公告)日：1999-01-13

    申请号：EP97830339.4

    申请日：1997-07-07

    Applicant: STMicroelectronics S.r.l.

    Inventor： Ferrari, Paolo ,  Vigna, Benedetto ,  Villa, Flavio

    IPC: H01L41/00 ,  G01L9/00

    CPC classification number: G01L9/0042 ,  G01L9/0054

    Abstract: The pressure sensor comprises a semiconductor material single crystal substrate (21); a semiconductor material layer (28) on the substrate (21); an air gap (55) arranged between the substrate (21) and the semiconductor material layer (28); and at least an opening (53) extending between the lower outer surface (52) of the substrate (21) and the air gap (55). The semiconductor material layer (28) is formed by a polycrystalline region (29) forming a diaphragm over the air gap (55) and by a monocrystalline region (30) elsewhere. Piezoresistive elements (46) extend over the semiconductor material layer (28), insulated therefrom by a dielectric layer (45), at a lateral delimitation edge of the diaphragm (29) and are connected one another so as to form a Wheatstone bridge the unbalancing whereof allows the pressure exerted onto the sensor to be measured.

    Abstract translation: 该压力传感器包括半导体材料的单晶基板（21）; 半导体材料层（28）在基板（21）; 在基板（21）和所述半导体材料层（28）之间设置空气间隙（55）; 并且在开口（53）的（21）的下部外表面（52）之间延伸与所述气隙（55）至少基材。 半导体材料层（28）由上方形成空气间隙（55）的隔膜的多晶区域（29）和由一个单晶区域（30）的其他地方形成。 压阻元件（46）上延伸的半导体材料层（28），在隔膜（29）的横向定界边缘由介电层（45）由绝缘那里和相互连接，从而形成惠斯登电桥的不平衡 允许WHEREOF施加到传感器上的压力进行测量。

    Process for manufacturing integrated chemical microreactors of semiconductor material, and integrated microreactor
    14.
    发明公开
    Process for manufacturing integrated chemical microreactors of semiconductor material, and integrated microreactor 有权
    一种用于半导体材料的制造集成微反应器的化学和集成微反应器过程

    公开(公告)号：EP1161985A1

    公开(公告)日：2001-12-12

    申请号：EP00830400.8

    申请日：2000-06-05

    Applicant: STMicroelectronics S.r.l.

    Inventor： Villa, Flavio ,  Mastromatteo, Ubaldo ,  Barlocchi, Gabriele ,  Cattaneo, Mauro

    IPC: B01J19/00

    CPC classification number: B81C1/00119 ,  B01J19/0093 ,  B01L3/5027 ,  B01L3/502707 ,  B01L7/52 ,  B01L7/525 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/1827 ,  B01L2300/185 ,  B01L2300/1883 ,  B81B2201/0214 ,  B81B2201/051 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/053

    Abstract: The microreactor is completely integrated and is formed by a semiconductor body (2) having a surface (4) and housing at least one buried channel (3) accessible from the surface of the semiconductor body (2) through two trenches (21a, 21b). A heating element (10) extends above the surface (4) over the channel (3) and a resist region (18) extends above the heating element and defines an inlet reservoir and an outlet reservoir (19, 20). The reservoirs (19, 20) are connected to the trenches (21a, 21b) and have, in cross-section, a larger area than the trenches. The outlet reservoir (20) has a larger area than the inlet reservoir (19). A sensing electrode (12) extends above the surface (4) and inside the outlet reservoir (20).

    Abstract translation: 微反应器是完全呼叫集成并且由一个半导体主体（2）形成具有表面（4）和壳体的至少一个掩埋沟道（3）从所述半导体主体（2）的表面通过两个沟槽访问（21A，21B） ， 的加热元件（10）的表面（4）在所述通道（3）和抗蚀剂区域（18）上方延伸，加热元件的上方延伸，并且限定到入口储槽和出口储槽（19，20）。 储存器（19，20）连接到所述沟槽（21A，21B），并且具有，在横截面中，比沟槽更大的面积。 出口储槽（20）具有比所述入口储（19）大的面积。 的感测电极（12）的表面（4）的上方和出口储槽（20）的内部延伸。

    Bi-dimensional position sensor of magnetic type, particularly for motor vehicle applications
    15.
    发明公开
    Bi-dimensional position sensor of magnetic type, particularly for motor vehicle applications 失效
    Zweidimensionaler magnetischer Positionssensor，insbesonderefürKraftfahrzeuganwendungen

    公开(公告)号：EP0881468A1

    公开(公告)日：1998-12-02

    申请号：EP98109368.5

    申请日：1998-05-22

    Applicant: STMicroelectronics S.r.l.

    Inventor： Sax, Herbert ,  Murari, Bruno ,  Villa, Flavio ,  Vigna, Benedetto ,  Ferrari, Paolo

    IPC: G01D5/14 ,  G01V3/08

    CPC classification number: G01V3/081 ,  G01D5/145

    Abstract: The bi-dimensional position sensor (1) can be advantageously used in the turn system controlled from the steering wheel of a vehicle and comprises a permanent magnet (3) fixed to a control lever (4) so as to move in a plane along a first (X) and a second (Y) direction and rotate about a third direction (W) orthogonal to the preceding ones. The permanent magnet is movable with respect to an integrated device comprising a first group of sensor elements (10 1 -10 3 ) arranged spaced along the first direction, a second group of sensor elements (10 4 -10 7 ) arranged spaced along the second direction and a third group of sensor elements (10 8 -10 9 ) detecting the angular position of the permanent magnet. Electronics integrated with the sensor elements generate a code associated with each position which the permanent magnet (3) may assume and a control signal (S) corresponding to the desired function.

    Abstract translation: 二维位置传感器（1）可以有利地用于从车辆的方向盘控制的转向系统中，并且包括固定到控制杆（4）上的永磁体（3），以便在沿着 第一（X）和第二（Y）方向，并且绕与前一个正交的第三方向（W）旋转。 永磁体可相对于包括沿着第一方向间隔布置的第一组传感器元件（101-103）的集成装置移动，第二组传感器元件（104-107）沿第二方向间隔布置，第三组传感器元件 一组检测永磁体的角位置的传感器元件（108-109）。 与传感器元件集成的电子产生与永磁体（3）可能呈现的每个位置相关联的代码和对应于期望功能的控制信号（S）。

    Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing method therefor
    20.
    发明公开
    Integrated chemical microreactor, thermally insulated from detection electrodes, and manufacturing method therefor 有权
    集成微反应器的化学，其生产隔热测量电极和方法

    公开(公告)号：EP1193214A1

    公开(公告)日：2002-04-03

    申请号：EP00830640.9

    申请日：2000-09-27

    Applicant: STMicroelectronics S.r.l.

    Inventor： Barlocchi, Gabriele ,  Villa, Flavio

    IPC: B81B3/00 ,  B81C1/00 ,  B01L3/00

    CPC classification number: B01L7/52 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0825 ,  B01L2300/1827 ,  B01L2300/1883

    Abstract: Integrated microreactor, formed in a monolithic body (50) and including a semiconductor material region (2, 23) and an insulating layer (25, 30); a buried channel (21) extending in the semiconductor material region; a first and a second access trench (40a, 40b) extending in the semiconductor material region (2, 23) and in the insulating layer (25, 30), and in communication with the buried channel (21); a first and a second reservoir (41a, 41b) formed on top of the insulating layer (25, 30) and in communication with the first and the second access trench; a suspended diaphragm (45) formed by the insulating layer (25, 30), laterally to the buried channel (21); and a detection electrode (28), supported by the suspended diaphragm (45), above the insulating layer (25, 30), and inside the second reservoir.

    Abstract translation: 集成微反应器中，形成在整体式主体（50）和包含半导体材料区（2，23）和绝缘层（25，30）; 一掩埋沟道（21）中的半导体材料区域延伸; 第一和第二访问沟槽（40A，40B）延伸的半导体材料区（2，23）和在所述绝缘层（25，30）和在与所述埋入通道（21）; 第一和第二贮液器（41A，41B）形成在绝缘层（25，30）和在与所述第一和第二访问沟槽的顶部上; 由绝缘层（25，30），晚反弹至掩埋沟道形成的悬浮隔膜（45）（21）; 并且由悬浮隔膜（45）支撑的检测电极（28），绝缘层（25，30）的上方，并且内部的第二贮存器。

Patent Agency Ranking