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    ZERO TCF THIN FILM RESONATOR
    221.
    发明公开
    ZERO TCF THIN FILM RESONATOR 失效
    WITH零温度系数薄膜谐振器

    公开(公告)号：EP0950282A1

    公开(公告)日：1999-10-20

    申请号：EP97947478.0

    申请日：1997-11-13

    Applicant: HONEYWELL INC.

    Inventor： HERB, William, R. ,  BURNS, David, W. ,  YOUNGNER, Daniel, W.

    IPC: H03H9

    CPC classification number: B81B3/0072 ,  B81B2201/0271 ,  H03H9/02448 ,  H03H9/2463 ,  H03H9/2473

    Abstract: A multi-material resonant thin film beam for a micromechanical sensor having a zero temperature coefficient of frequency (TCF) which is the resonant frequency shift with temperature change. One of the materials may be polysilicon and the other material may be silicon nitride or silicon oxide. Each material has a different thermal coefficient of expansion. The proportion of the various materials is adjusted and the specific geometries are determined so that the TCF is zero. One embodiment is a microbeam composed of two polysilicon thin films with a silicon nitride thin film inserted between the polysilicon films. The thickness of the silicon nitride film may be adjusted to trim the TCF to zero. The film of nitride instead may be placed on one side of a polysilicon film to form a beam. Dual or multiple beam resonators likewise may be made with several materials. The nitride may be placed in the shank areas which join and secure the ends of the beams. Such zero TCF beams may be incorporated in microsensor structures for measuring pressure, temperature, strain and other parameters.

    CAPTEUR INERTIEL A MASSES SISMIQUES IMBRIQUEES ET PROCEDE DE FABRICATION D'UN TEL CAPTEUR
    227.
    发明公开
    CAPTEUR INERTIEL A MASSES SISMIQUES IMBRIQUEES ET PROCEDE DE FABRICATION D'UN TEL CAPTEUR 审中-公开
    惯性传感器，制造这种传感器嵌套的抗震材料和方法

    公开(公告)号：EP3071932A1

    公开(公告)日：2016-09-28

    申请号：EP14790041.9

    申请日：2014-10-21

    Applicant: Safran Electronics & Defense

    Inventor： JEANROY, Alain ,  ONFROY, Philippe

    IPC: G01C19/574 ,  B81B3/00

    CPC classification number: G01C19/574 ,  B81B3/0021 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81C1/00547 ,  B81C2201/013 ,  G01C19/5733 ,  G01C19/5769

    Abstract: The invention relates to an inertial sensor comprising a frame to which at least two seismic bodies are connected by resilient means such as to be movable in a suspension plane, and transducers to keep the seismic bodies vibrating and determine a relative movement of the seismic bodies relative to one another, characterized in that the seismic bodies have a single shape and a single mass, and in that the seismic bodies comprise interlocking parts such that the seismic bodies are nested inside one another while being movable in the suspension plane relative to the other of the seismic bodies, the seismic bodies having centres of gravity that coincide with one another. The invention also relates to a method for manufacturing such a sensor.

    Abstract translation: 计划惯性传感器包括向其中至少两个地震体通过弹性装置连接的框架，以便可动在悬浮液中，换能器，以保持所述地震体的相对振动和确定性矿地震体的相对运动，以彼此 规划在DASS特点死地震体具有单一形状和单一质量，并在管芯DASS地震体包括检查互锁部件也地震体嵌套在彼此，同时相对于另一个地震体的悬浮液在可动 与具有重心也彼此一致地震机构。 一种用于制造传感器的搜索方法。

    THIN CAPPING FOR MEMS DEVICES
    229.
    发明公开
    THIN CAPPING FOR MEMS DEVICES 审中-公开
    DÜNNERVERSCHLUSSFÜRMEMS-VORRICHTUNGEN

    公开(公告)号：EP3038974A1

    公开(公告)日：2016-07-06

    申请号：EP14839979.3

    申请日：2014-08-26

    Applicant: Silex Microsystems AB

    Inventor： KÄLVESTEN, Edvard ,  EBEFORS, Thorbjörn ,  SVEDIN, Niklas

    IPC: B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/48

    CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235

    Abstract: The invention relates to a device comprising a base substrate(700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from said component (702). It also comprises spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via said spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) comprises vias (710) comprising metal for providing electrical connection through said capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

    Abstract translation: 一种装置包括具有附接到其上的微组件（702）的基底（700）。 适当地，它设置有用于向组件（702）传导信号和从组件（702）传出信号的路由元件（704）。 它还包括间隔件（706），其也可以用作垂直路线信号的导电结构。 存在玻璃材料的覆盖结构（708），其设置在基底基板（700）上方，优选地通过共晶接合通过间隔件（706）接合，其中封盖结构（708）包括通孔（710），包括金属 用于通过封盖结构提供电连接。 通孔可以通过加压的冲压/压制方法制成，以使玻璃软化并施加压力至玻璃中的预定深度。 然而，其他方法是可能的，例如钻孔，蚀刻，爆破。

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