Abstract:
A method for selective metallization of a surface of a polymer article is provided. The polymer article contains a base polymer and at least one metal compound dispersed in the base polymer. The method includes gasifying at least a part of a surface of the polymer article by irradiating the surface with an energy source,and forming at least one metal layer on the surface of the polymer article by chemical plating. The metal compound contains a tin oxide doped with at least one doping element selected from a group including: V,Sb,In,and Mo.
Abstract:
The invention disclosed relates to an aqueous activator solution and a method for the electroless deposition of copper on a laser direct structured substrate surface. By the invention, an aqueous activator solution comprising a strong reducing agent is proposed to enhance the catalytic activity of the irradiated surface area of a LDS substrate.
Abstract:
The present invention is directed to non- lithographic patterning by laser (or similar-type energy beam) ablation, where the ablation system ultimately results in circuitry features that are relative free from debris induced over-plating defects (debris relating to the ablation process) and fully additive plating induced over-plating defects. Compositions of the invention include a circuit board. precursor having an insulating substrate and a cover layer. The insulating substrate is made from a dielectric material and also a metal oxide activatable filler. The cover layer can be sacrificial or non-sacrificial and is used to remediate unwanted debris arising from the ablation process. The cover layer composition comprises 80 to 100 weight % of a soluble polymeric matrix material.
Abstract:
Die Erfindung betrifft ein Halbleitersensorbauteil (1) mit Hohlraumgehäuse (2) und Sensorchip (4) sowie ein Verfahren zur Herstellung desselben. Dazu weist das Hohlraumgehäuse (2) eine Öffnung zur Umgebung auf und der Sensorchip (4) besitzt einen Sensorbereich (5), welcher der Öffnung (6) zugewandt ist. Der Sensorchip (4) ist in dem Hohlraum (3) des Gehäuses (2) in eine gummielastischen Schicht (7) mit seiner Rückseite (8) und seinen Randseiten (9, 10) eingebettet, wobei die gummielastische Schicht (7) spaltbare, eingelagerte metallorganische oder anorganische metallische Komplexe (11) aufweist. Die Metalle (Me) der Komplexe (11) liegen frei zugänglich auf der Oberseite (12) der gummielastischen Schicht (7) und bilden metallische Keime (13) für Verdrahtungsleitungen (14), welche den Sensorbereich (5) des Sensorchips (4) mit Kontaktanschlussflächen (15) im Hohlraum (3) des Hohlraumgehäuses (2) elektrisch verbinden.
Abstract:
Laminates for electronic components are produced by applying a polyimide resin precursor solution containing a palladium compound on a polyimide substrate, drying the resulting coating to form a polyimide resin precursor layer, irradiating this layer with ultraviolet rays in the presence of a hydrogen donor to form nuclei for primer plating, forming a metal primer layer by electroless plating, and converting the polyimide resin precursor layer into a polyimide resin layer through imidation by heating either after or before the formation of a surface plating layer. The invention provides laminates for electronic components which are extremely improved in adhesion to metal layers without impairing the characteristics inherent in the substrate and are excellent in insulating properties, and a polyimide resin precursor resin solution to be used in the production of the laminates.
Abstract:
A unique process metallizes a substrate surface using a reducing agent including a borohydride to reduce, in a starved reaction, metal oxide particles (300) substantially uniformly distributed and at a controlled concentration in a particle-filled resin (204) to produce catalytic island areas (301). The catalytic island areas (301) formed have a surface resistivity greater than 106 ohms per square. These catalytic island areas (301) are then electrolessly metallized to a predetermined thickness, such that adjacent catalytic island areas (301) are interconnected and form metallic features, such as pads, vias (213), and conductors (210, 211 and 212). The starved reaction limits the reduction of metal oxide particles (300) to catalytic island areas (301) and prevents migration of reduced metal beyond each of the exposed surfaces of particle-filled resin (204) which are to be metallized.
Abstract:
Ein Verfahren zum Abdichten und/oder elektrischen Verbinden von Komponenten für ein Kraftfahrzeug umfasst ein Bereitstellen eines ersten Elements (10) und eines zweiten Elements (20), das in einer Ausnehmung (14) des ersten Elements (10) angeordnet ist. Das Verfahren umfasst weiter ein Einbringen von elektrisch leitenden Additiven in das erste Element (10) in einem Bereich einer Grenzfläche (5), die als Übergang zwischen dem des ersten und zweiten Element (10, 20) ausgebildet ist. Das Verfahren umfasst weiter ein Freilegen der einer Grenzfläche (5) des ersten Elements (10) und des zweiten Elements (20). Außerdem umfasst das Verfahren ein chemisches Abscheiden eines vorgegebenen Materials und dadurch Ausbilden einer Dichtungsschicht und/oder elektrisch leitende Verbindungsschicht (3) an dem ersten Element (10) und dem zweiten Element (20) und dadurch Abdichten der Grenzfläche (5) und/oder elektrisches Verbinden des ersten Elements (10) mit dem zweiten Element (20).
Abstract:
An application of a doped tin oxide, used as a chemical plating promoter in a method for selectively metallizing a surface of an insulating substrate is provided. A polymer composition including the doped tin oxide, a polymer molded body, an ink composition and a method for selectively metallizing a surface of an insulating substrate are also provided. The doped tin oxide has a light color, and does not interfere the color of the substrate while presetting thereof. The doped tin oxide has a strong ability of promoting chemical plating; while using it as a chemical plating promoter, a continuous metal layer can be formed with a high plating speed, together with higher adhesive between the metal layer and the insulating substrate.
Abstract:
본 발명은 각종 고분자 수지 제품 또는 수지층 상에 매우 단순화된 공정으로 미세한 도전성 패턴을 형성할 수 있게 하는 도전성 패턴 형성용 조성물, 이를 사용한 도전성 패턴 형성 방법과, 도전성 패턴을 갖는 수지 구조체에 관한 것이다. 상기 도전성 패턴 형성용 조성물은 고분자 수지; 및 화폐 금속 원소 [coinage metal element, 11족 (IB족)] 및 비금속 원소를 포함하고: 상기 11족 금속 원소를 포함한 4면체들이 서로 꼭지점을 공유하는 형태로 3차원적으로 연결된 입체 구조를 갖는 비도전성 금속 화합물; 을 포함하고, 전자기파 조사에 의해, 상기 비도전성 금속 화합물로부터, 상기 11족 금속 원소 또는 그 이온을 포함하는 금속핵이 형성되는 것이다.