公开(公告)号：AU2013207962A1

公开(公告)日：2014-08-07

申请号：AU2013207962

申请日：2013-01-10

Applicant: STC UNM

Inventor： CHACKERIAN BRYCE ,  PEABODY DAVID ,  TUMBAN EBENEZER

IPC: A61K39/12 ,  A61P31/20 ,  C12N7/01

Abstract: In one aspect, the invention provides immunogenic HPV L2-containing viral-like particles (VLPs). Related compositions (e.g. vaccines), nucleic acid constructs, and therapeutic methods are also provided. In certain aspects, the VLPs are comprised of a coat polypeptide of the bacteriophages PP7 or MS2, wherein the coat protein is modified by insertion of peptide antigens derived from HPV L2, and wherein the HPV L2 peptide is displayed on the VLP and encapsidates PP7 or MS2 mRNA. Specifically, VLPs of the invention display L2 peptides at the N- terminus of the bacteriophage coat protein. Surprisingly, these L2-displaying VLPs induce more broadly neutralizing antibody responses than when the same peptide is displayed in the AB-loop such that the immunogenic response is enhanced by a factor of at least 10. Immunogenic VLPs and related compositions of the invention induce high titer antibody responses against HPV L2 and protect against HPV challenge

公开(公告)号：AU2012271494A1

公开(公告)日：2013-12-19

申请号：AU2012271494

申请日：2012-06-15

Applicant: STC UNM

Inventor： SEROV ALEXEY ,  HALEVI BARR ,  ARTYUSHKOVA KATERYNA ,  ATANASSOV PLAMEN B

IPC: B01J31/12 ,  B01J38/02 ,  H01M4/90

Abstract: A method of preparing M-N-C catalysts utilizing a sacrificial support approach and inexpensive and readily available polymer precursors as the source of nitrogen and carbon is disclosed. Exemplary polymer precursors include non-porphyrin precursors with no initial catalytic activity. Examples of suitable non-catalytic non-porphyrin precursors include, but are not necessarily limited to low molecular weight precursors that form complexes with iron such as 4-aminoantipirine, phenylenediamine, hydroxysuccinimide, ethanolamine, and the like.

公开(公告)号：MY149865A

公开(公告)日：2013-10-31

申请号：MYPI20083234

申请日：2007-03-09

Applicant: STC UNM

Inventor： HERSEE STEPHEN M ,  XIN WANG ,  XINYU SUN

IPC: H01L21/00

Abstract: EXEMPLARY EMBODIMENTS PROVIDE SEMICONDUCTOR DEVICES INCLUDING HIGH-QUALITY (I.E., DEFECT FREE) GROUP III-N NANOWIRES AND UNIFORM GROUP III-N NANOWIRE ARRAYS AS WELL AS THEIR SCALABLE PROCESSES FOR MANUFACTURING, WHERE THE POSITION, ORIENTATION, CROSS-SECTIONAL FEATURES, LENGTH AND THE CRYSTALLINITY OF EACH NANOWIRE CAN BE PRECISELY CONTROLLED. A PULSED GROWTH MODE CAN BE USED TO FABRICATE THE DISCLOSED GROUP III-N NANOWIRES AND/OR NANOWIRE ARRAYS PROVIDING A UNIFORM LENGTH OF ABOUT 10 NM TO ABOUT 1000 MICRONS WITH CONSTANT CROSS-SECTIONAL FEATURES INCLUDING AN EXEMPLARY DIAMETER OF ABOUT 10-1000 NM. IN ADDITION, HIGH-QUALITY GaN SUBSTRATE STRUCTURES CAN BE FORMED BY COALESCING THE PLURALITY OF GaN NANOWIRES AND/OR NANOWIRE ARRAYS TO FACILITATE THE FABRICATION OF VISIBLE LEDs AND LASERS. FURTHERMORE, CORE-SHELL NANOWIRE/MQW ACTIVE STRUCTURES CAN BE FORMED BY A CORE-SHELL GROWTH ON THE NONPOLAR SIDEWALLS OF EACH NANOWIRE AND CAN BE CONFIGURED IN NANOSCALE PHOTOELECTRONIC DEVICES SUCH AS NANOWIRE LEDs AND/OR NANOWIRE LASERS TO PROVIDE TREMENDOUSLY-HIGH EFFICIENCIES.

公开(公告)号：IL193824A

公开(公告)日：2013-08-29

申请号：IL19382408

申请日：2008-09-02

Applicant: STC UNM

IPC: H01L20060101

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

公开(公告)号：CA2811086A1

公开(公告)日：2012-03-22

申请号：CA2811086

申请日：2011-09-15

Applicant: STC UNM

Inventor： PAUL SUROJIT

IPC: C07K14/47 ,  A61K38/17 ,  A61P25/00 ,  C07K19/00

Abstract: A novel peptide sequence that is a modified derivative of a neuron-specific tyrosine phosphatase is shown and described. Specifically, the novel peptide sequence is a modified derivative of striatal-enriched tyrosine phosphatase (STEP). The peptide sequence has been modified so as to be able to ameliorate and treat brain injury resulting from excessive glutamate release and / or oxidative stress. Examples of the types of brain injury which the presently disclosed peptide sequence is useful for treating includes acute brain injury resulting from stroke or traumatic brain injury and chronic disorders such as Huntington's chorea and schizophrenia. Furthermore, the presently described peptide sequence may further be useful in the treatment and amelioration of disorders associated with fear memory such as post-traumatic stress disorder.

公开(公告)号：CA2779488A1

公开(公告)日：2011-05-19

申请号：CA2779488

申请日：2010-11-12

Applicant: STC UNM

Inventor： SMYTH HUGH D C ,  SELVAM PARTHIBAN ,  TRUMAN CHARLES RANDALL

IPC: A61M15/00 ,  A61M11/02

Abstract: A dry powder inhaler including a housing defining a chamber for receiving a dose of powdered medicament, an inhalation port in fluid communication with the chamber, at least one airflow inlet providing fluid communication between the chamber and an exterior of the housing, and a flutter element in the chamber and associated with a dose of powdered medicament. The flutter element has a tensioned distal end proximate the at least one airflow inlet and a free proximal end opposite to the distal end and downstream of the inlet. The flutter element is configured to vibrate in response to airflow through the chamber and aerosolize the dose of powdered medicament.

公开(公告)号：CA2770714A1

公开(公告)日：2011-03-17

申请号：CA2770714

申请日：2010-08-27

Applicant: STC UNM

Inventor： SMYTH HUGH D C ,  DONOVAN MARTIN J

IPC: A61K9/28 ,  A61K9/12 ,  A61K9/14

Abstract: A method of method of coating powdered medical agent onto a carrier particle for use in a dry powder inhaler may include applying ultrasonic energy to agglomerated powdered medical agent to deaggregate and aerosolize particles of the medical agent into particles having a desired average particle size, and coating at least one carrier particle with a desired amount of the deaggregated and aerosolized particles of the medical agent.

公开(公告)号：CA2727920A1

公开(公告)日：2010-01-07

申请号：CA2727920

申请日：2009-06-30

Applicant: STC UNM

Inventor： KISSEL DAVID J ,  BRINKER CHARLES JEFFREY

IPC: C09D183/02 ,  C09D5/00 ,  C09K3/18

Abstract: Provided are superhydrophobic coatings, devices and articles including superhydrophobic coatings, and methods for preparing the superhydrophobic coatings. The exemplary superhydrophobic device can include a substrate component and one or more superhydrophobic coatings disposed over the substrate component, wherein at least one of the one or more superhydrophobic coatings has a water contact angle of at least about 150° and a contact angle hysteresis of less than about 1°. The one or more superhydrophobic coatings can include an ultra high water content acid catalyzed polysilicate gel, the polysilicate gel including a three dimensional network of silica particles having surface functional groups derivatized with a silylating agent and a plurality of pores.

公开(公告)号：ZA200807182B

公开(公告)日：2009-08-26

申请号：ZA200807182

申请日：2008-08-20

Applicant: STC UNM RES & TECHNOLOGY LAW

Inventor： HERSEE STEPHEN M ,  XIN WANG ,  XINYU SUN

IPC: H01L20090101

公开(公告)号：CA2643439A1

公开(公告)日：2008-04-24

申请号：CA2643439

申请日：2007-03-09

Applicant: STC UNM

Inventor： SUN XINYU ,  HERSEE STEPHEN M ,  WANG XIN

IPC: H01L21/20

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.