公开(公告)号：WO2003081624A2

公开(公告)日：2003-10-02

申请号：PCT/EP2003/050078

申请日：2003-03-24

Applicant: PRINTABLE FIELD EMITTERS LIMITED ,  BURDEN, Adrian, Paul ,  BISHOP, Hugh ,  LEE, Warren

Inventor： BURDEN, Adrian, Paul ,  BISHOP, Hugh ,  LEE, Warren

IPC: H01J1/304

CPC classification number: B82Y10/00 ,  H01J1/3048 ,  H01J9/025 ,  H01J2201/30446

Abstract: In a method of creating a field electron emission material, vanadium or a vanadium compound is disposed in respective locations of a substrate in order to create a plurality of emission site at said locations, at an average density of at least 10 cm -2. Preferably, the vanadium or vanadium compound is in the form of particles.

Abstract translation: 在产生场电子发射材料的方法中，将钒或钒化合物设置在基底的相应位置，以便在所述位置处以至少10cm -1的平均密度产生多个发射部位， 优选地，钒或钒化合物是颗粒的形式。

公开(公告)号：WO2002089166A1

公开(公告)日：2002-11-07

申请号：PCT/JP2002/004054

申请日：2002-04-24

Applicant: 松下電工株式会社 ,  菰田 卓哉 ,  相澤 浩一 ,  本多 由明 ,  櫟原 勉 ,  渡部 祥文 ,  幡井 崇 ,  馬場 徹 ,  竹川 宜志

Inventor： 菰田 卓哉 ,  相澤 浩一 ,  本多 由明 ,  櫟原 勉 ,  渡部 祥文 ,  幡井 崇 ,  馬場 徹 ,  竹川 宜志

IPC: H01J1/312

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/3125

Abstract: In a field emission electron source (10), a strong field drift layer (6) and a surface electrode (7) composed of a thin metal film are arranged on an n-type silicon substrate (1). On the back surface of the n-type silicon substrate (1), an ohmic electrode (2) is arranged. DC voltage is applied so that the surface electrode (7) has a positive potential with respect to the ohmic electrode (2). Thus, electrons injected from the ohmic electrode (2) via the n-type silicon substrate (1) to the strong field drift layer (6) drift in the strong field drift layer (6) and are emitted outside via the surface electrode (7). The strong field drift layer (6) includes a plenty of fine semiconductor crystals (63) of nanometer order formed in a part of the semiconductor layer constituting the strong field drift layer (6) and a plenty of insulation films (64) formed on the surface of the fine semiconductor crystals (63) and having a film thickness generating the electron tunneling phenomenon.

Abstract translation: 在场发射电子源（10）中，在n型硅衬底（1）上布置有由强电场漂移层（6）和由金属薄膜组成的表面电极（7）。 在n型硅衬底（1）的背表面上布置有欧姆电极（2）。 施加直流电压，使得表面电极（7）相对于欧姆电极（2）具有正电位。 因此，从欧姆电极（2）经由n型硅衬底（1）注入到强场漂移层（6）的电子在强场漂移层（6）中漂移，并通过表面电极（7）发射到外部 ）。 强场漂移层（6）包括在构成强场漂移层（6）的半导体层的一部分中形成的大量纳米级的半导体晶体（63），以及形成在其上的大量绝缘膜（64） 微细半导体晶体（63）的表面，并具有产生电子隧道现象的膜厚度。

公开(公告)号：WO98052228A1

公开(公告)日：1998-11-19

申请号：PCT/US1998/010007

申请日：1998-05-15

IPC: G09G3/22 ,  H01J1/304 ,  H01L29/06 ,  G09G3/10 ,  H01J1/05 ,  H01J1/14 ,  H01J1/38 ,  H01J1/48 ,  H01J19/06 ,  H01L29/12

CPC classification number: H01J3/021 ,  G09G3/22 ,  H01J1/304 ,  H01J2201/30446 ,  Y10T428/30

Abstract: A cold cathode electron emission structure (34) includes an amorphous carbon matrix having cesium dispersed therein, with the cesium present in substantially non-crystalline form. A cesium-carbon-oxide layer (36) is positioned on the amorphous carbon matrix, constitutes an electron emission surface and causes the cold cathode electron emission structure (34) to exhibit a lowered surface work function. A display structure (20) including the aforedescribed cold cathode electron emission structure (34) further includes a target electrode (28) including a phosphor (26) and exhibiting a target potential for attraction of electrons. A gate electrode (44) is positioned between the electron emission structure (34) and the target electrode (28) and is biased at a gate potential which attracts electrons, but which is insufficient, in combination with the target potential, to cause emission of a beam of electrons from the electron emission structure (34). A control electrode (40) is coupled to the electron emission structure (34) and selectively applies a low-voltage control potential which, in combination with the gate potential and the target voltage, is sufficient to cause the electron emission structure (34) to emit a beam of electrons towards the target electrode (28). The cesium-carbon-oxide layer (36) in combination with the control electrode (40) further enables the achievement of a long focal length, field effect display structure (200).

Abstract translation: 冷阴极电子发射结构（34）包括其中分散有铯的无定形碳基质，其中铯基本上是非结晶形式。 铯碳氧化物层（36）位于无定形碳基体上，构成电子发射表面，并使冷阴极电子发射结构（34）表现出降低的表面功函数。 包括上述冷阴极电子发射结构（34）的显示结构（20）还包括包含荧光体（26）并具有吸引电子的目标电位的目标电极（28）。 栅电极（44）位于电子发射结构（34）和目标电极（28）之间，并被偏置在栅极电位，其吸引电子但不足以与目标电位相结合，导致发射 来自电子发射结构（34）的电子束。 控制电极（40）耦合到电子发射结构（34）并且选择性地施加低电压控制电位，其结合门电位和目标电压足以使电子发射结构（34） 向目标电极（28）发射电子束。 与控制电极（40）组合的铯碳氧化物层（36）还能够实现长焦距场效应显示结构（200）。

公开(公告)号：WO1997005639A1

公开(公告)日：1997-02-13

申请号：PCT/JP1996002013

申请日：1996-07-19

Applicant: CASIO COMPUTER CO., LTD. ,  STANLEY ELECTRIC CO., LTD.

Inventor： CASIO COMPUTER CO., LTD. ,  STANLEY ELECTRIC CO., LTD. ,  NAKAMURA, Osamu ,  SUZUKI, Shigemi

IPC: H01J01/30

CPC classification number: B82Y10/00 ,  G02F1/1336 ,  H01J1/30 ,  H01J1/3042 ,  H01J9/022 ,  H01J9/025 ,  H01J61/0677 ,  H01J61/305 ,  H01J61/32 ,  H01J61/70 ,  H01J61/72 ,  H01J2201/30446 ,  H01J2217/49271 ,  H01J2329/00

Abstract: An yttrium film (34) is formed on a base plate (33) made of an Ni-Cr alloy (INCONEL 601), by vapor deposition (achieved by resistance heating or application of an electron beam) or sputtering, to a thickness ranging from 1000 ANGSTROM to about 3000 ANGSTROM . The resultant structure consisting of the base plate (33) and the yttrium film (34) is placed on a table (32) provided in a reaction furnace (31) which has a gas inlet port (38) and a gas outlet port (39). Hydrogen is introduced into the furnace (31) through the gas inlet port (38), thus filling the furnace (31) with hydrogen. The concentration of oxygen and/or oxygen-containing substance should be 1 % or less by volume. The oxygen-containing substance is water, which exists in the form of vapor. The hydrogen atmosphere is heated from normal temperature to about 600 DEG C, thus heating the structure at about 600 DEG C for 10 to 60 minutes, thereby forming an yttrium oxide film (36), which covers a body (35) of the yttrium film. Thereafter, the yttrium oxide film (36) is dehydrogenated, it is heated at 350 DEG C or more for 15 minutes in an atmosphere having a pressure reduced to 1 x 10 Torr or less, thereby removing the hydrogen from the yttrium oxide film (36). As a result, there is manufactured an electron-emitting electrode which has good electron-emitting property.

Abstract translation: 在由Ni-Cr合金（INCONEL 601）制成的基板（33）上，通过气相沉积（通过电阻加热或施加电子束实现）或溅射形成钇膜（34），厚度范围从 1000 ANGSTROM到约3000 ANGSTROM。 将由基板（33）和钇膜（34）组成的结构放置在设置在具有气体导入口（38）和气体出口（39）的反应炉（31）的台（32） ）。 通过气体入口（38）将氢气引入炉子（31），从而用氢气填充炉子（31）。 氧和/或含氧物质的浓度应为1体积％以下。 含氧物质是以蒸气形式存在的水。 将氢气从正常温度加热至约600℃，由此在约600℃下加热结构10至60分钟，从而形成覆盖钇膜体（35）的氧化钇膜（36） 。 此后，氧化钇膜（36）脱氢，在压力降至1×10 -3乇或更低的气氛中，在350℃以上加热15分钟，从而从钇中除去氢 氧化膜（36）。 结果，制造了具有良好的电子发射特性的电子发射电极。

公开(公告)号：WO1996035640A1

公开(公告)日：1996-11-14

申请号：PCT/US1996005358

申请日：1996-04-17

Applicant: WAYNE STATE UNIVERSITY

Inventor： WAYNE STATE UNIVERSITY ,  PRYOR, Roger, W.

IPC: C01C03/00

CPC classification number: H01J1/30 ,  C01B21/0605 ,  H01J2201/30446

Abstract: A cold cathode is formed of carbon nitride. The cathode may include layers of boron nitride and diamond underlying the carbon nitride. The cathodes are made by reactive laser ablation or by sputtering. Electronic devices utilizing the carbon nitride cathodes are also described.

Abstract translation: 冷阴极由碳氮化物形成。 阴极可以包括碳纳米管下面的氮化硼和金刚石层。 阴极由反应激光烧蚀或溅射制成。 还描述了利用碳氮化物阴极的电子器件。

公开(公告)号：EP2823502A1

公开(公告)日：2015-01-14

申请号：EP13707279.9

申请日：2013-03-01

Applicant: Molteni, Roberto

Inventor： Molteni, Roberto

IPC: H01J35/02 ,  H01J35/06 ,  H05G1/06

CPC classification number: H01J35/025 ,  H01J35/065 ,  H01J2201/30446 ,  H05G1/06

Abstract: New kinds of moderate-load X-ray source devices are described, with reduced weight and size, thus being especially suitable for compact portable X-ray sources, such as those required for hand-held dental and veterinarian applications. The devices comprises an X-ray tube (1) with carbon nanotube cathode (3) and electrically grounded anode (5), whereas the overall design of the device and of the X- ray tube therein are adapted so to take advantage of the special characteristics of the carbon nanotube cathode, instead of replicating the design concepts that have been used for long time with filament- based X-ray tubes and with high-load X-ray sources.

公开(公告)号：EP2375435A1

公开(公告)日：2011-10-12

申请号：EP10159139.4

申请日：2010-04-06

Applicant: LightLab Sweden AB

Inventor： Hu, Qiu-Hong

IPC: H01J1/304 ,  H01J63/02 ,  H01J63/06 ,  H01J31/12

CPC classification number: H01J1/3044 ,  B82Y20/00 ,  H01J1/304 ,  H01J31/123 ,  H01J63/02 ,  H01J63/04 ,  H01J2201/3043 ,  H01J2201/30446 ,  H01J2201/30484 ,  H01J2201/30488 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0428 ,  H01J2329/0439 ,  H01J2329/0465 ,  H01J2329/0468 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: The present invention relates to a field emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base structure, wherein at least a portion of the plurality of micrometer sized sections each are provided with a plurality of electrically conductive nanostructures.
Advantages of the invention include lower power consumption as well as an increase in light output of e.g. a field emission lighting arrangement comprising the field emission cathode.

Abstract translation: 本发明涉及一种场致发射阴极，包括至少部分导电的基底结构，以及空间上分布在基底结构处的多个导电千分尺尺寸的部分，其中多个微米尺寸部分的至少一部分各自为 具有多个导电纳米结构。 本发明的优点包括较低的功耗以及例如光输出的增加。 包括场致发射阴极的场发射照明装置。

公开(公告)号：EP2194563A2

公开(公告)日：2010-06-09

申请号：EP09175519.9

申请日：2009-11-10

Applicant: Canon Kabushiki Kaisha

Inventor： Aoki, Naofumi ,  Nishida, Shoji

IPC: H01J9/02 ,  H01J1/304 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: The following method is provided: a method of readily fabricating an electron-emitting device (10), coated with a low-work function material, having good electron-emitting properties with high reproducibility. Differences in electron-emitting properties between electron-emitting devices each fabricated by the method are reduced. Before a structure (3) is coated with the low-work function material, a metal oxide layer (4) is formed on the structure (3).

Abstract translation: 提供了下面的方法：易制造到电子发射器件（10），涂覆有低功函数材料，具有高再现性良好的电子发射特性的方法。 在由所述方法制造的电子发射器件之间的电子发射特性的差异降低。 的结构（3）之前被涂覆有低功函数材料，金属氧化物层（4）形成在所述结构（3）。

公开(公告)号：EP1876628A4

公开(公告)日：2009-11-04

申请号：EP06732040

申请日：2006-04-18

Applicant: ASAHI GLASS CO LTD

Inventor： KUROIWA YUTAKA ,  NARUSHIMA SATORU ,  ITO SETSURO

IPC: H01J1/304 ,  H01J31/12 ,  H01J31/15 ,  H01J63/06

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30446

公开(公告)号：EP2092542A2

公开(公告)日：2009-08-26

申请号：EP07846340.3

申请日：2007-11-15

Applicant: Keesmann, Till

Inventor： Keesmann, Till

IPC: H01J1/304 ,  H01J29/04

CPC classification number: H01J1/3044 ,  H01J29/04 ,  H01J2201/30446

Abstract: The invention relates to a field emission device comprising a cathode having an emission region (1) for electrons (2). The field emission device is embodied for generating technically useful electron currents at a voltage which is as low as possible, in such a way that the emission region (1) has an arrangement of a plurality of individually positioned or positionable atoms (4) or molecules.