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公开(公告)号：KR100396845B1
公开(公告)日：2003-09-02
申请号：KR1020000073340
申请日：2000-12-05
Applicant: 한국전자통신연구원
CPC classification number: G11C13/025 , B82Y10/00 , G11C2213/81
Abstract: PURPOSE: Data storage media are provided to use carbon nanotubes for reducing interferences between neighboring magnetic substances, generated as bit size of magnetic media is smaller and nearer, thereby increasing data stability. CONSTITUTION: A porous material(120) is accumulated on a substrate(110). A ferromagnetic material(140) is contained in porous parts of the porous material, and causes a magnetic polarization phenomenon, to perform magnetic recording media functions. An information recorder applies a magnetic field to the ferromagnetic material, to generate magnetic polarization in the ferromagnetic material, and records information. An information reader extracts an effect of the magnetic polarization of the ferromagnetic material, and reads out an information state in accordance with a polarization direction.
Abstract translation: 目的：提供数据存储介质以使用碳纳米管来减少相邻磁性物质之间的干扰，这是因为磁性介质的位尺寸越小越近，从而增加数据稳定性。 构成：多孔材料（120）堆积在基板（110）上。 铁磁材料（140）被包含在多孔材料的多孔部分中，并引起磁极化现象，以执行磁记录介质功能。 信息记录器向铁磁材料施加磁场，在铁磁材料中产生磁极化，并记录信息。 信息读取器提取铁磁材料的磁极化效应，并根据极化方向读出信息状态。
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公开(公告)号：KR1020030062508A
公开(公告)日：2003-07-28
申请号：KR1020020002738
申请日：2002-01-17
Applicant: 한국전자통신연구원
IPC: H01J1/30
Abstract: PURPOSE: A high brightness field emission display is provided to achieve improved field emission characteristics by lowering the drive voltage of field emitter and lengthening the scanning time. CONSTITUTION: A field emission display comprises pixels arranged into a matrix shape on a glass substrate. Each of pixels includes a ferroelectric transistor(200) formed on the glass substrate; and a thin film type field emitter(100) formed in the vicinity of the ferroelectric transistor. The ferroelectric transistor includes a band type gate; a ferroelectric film formed on the gate; a floating gate formed in parallel with the gate; an amorphous silicon channel formed by inserting an insulation film on the floating gate; a source and a drain formed on the amorphous silicon channel; and a source electrode and a drain electrode for connecting the source and the drain to an external terminal.
Abstract translation: 目的：提供高亮度场致发射显示器，通过降低场发射器的驱动电压和延长扫描时间来实现改进的场致发射特性。 构成：场致发射显示器包括在玻璃基板上排列成矩阵形状的像素。 每个像素包括形成在玻璃基板上的铁电晶体管（200） 以及形成在铁电晶体管附近的薄膜型场致发射体（100）。 铁电晶体管包括带状栅极; 栅极上形成的铁电膜; 与栅极平行形成的浮动栅极; 通过在浮动栅极上插入绝缘膜形成的非晶硅沟道; 形成在非晶硅沟道上的源极和漏极; 以及用于将源极和漏极连接到外部端子的源电极和漏电极。
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公开(公告)号：KR100392362B1
公开(公告)日：2003-07-22
申请号：KR1020000086556
申请日：2000-12-30
Applicant: 한국전자통신연구원
IPC: H01L21/3063
Abstract: PURPOSE: A selective etch method of silicon is provided to perform a wet etch having a good etch selectivity between a doped silicon thin film and an undoped silicon thin film. CONSTITUTION: An undoped silicon thin film(22) and a doped silicon thin film(23) are stacked on a defined process completed structure(21). Then, a mask pattern(24) is formed by selectively etching a photoresist or a metal having a wet etch selectivity with a polysilicon. Then, the doped silicon thin film(23) is selectively removed by a wet etching using the mask pattern(24). At this time, the wet etching is performed using a mixed solution made of HF, a nitric acid and an acetic acid or another mixed solution made of the HF, the nit acid and water. The mixed solution oxidizes a silicon thin film using the nitric acid and simultaneously etches an oxide using the HF.
Abstract translation: 目的：提供硅的选择性蚀刻方法以在掺杂硅薄膜和未掺杂硅薄膜之间执行具有良好蚀刻选择性的湿法蚀刻。 构成：将未掺杂的硅薄膜（22）和掺杂硅薄膜（23）堆叠在限定的加工完成结构（21）上。 然后，通过用多晶硅选择性地蚀刻具有湿法蚀刻选择性的光致抗蚀剂或金属，形成掩模图案（24）。 然后，使用掩模图案（24）通过湿法蚀刻选择性地去除掺杂硅薄膜（23）。 此时，使用由HF，硝酸和乙酸制成的混合溶液或由HF，硝酸和水制成的另一种混合溶液进行湿法蚀刻。 混合溶液使用硝酸氧化硅薄膜并且同时使用HF蚀刻氧化物。
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公开(公告)号：KR1020030056571A
公开(公告)日：2003-07-04
申请号：KR1020010086833
申请日：2001-12-28
Applicant: 한국전자통신연구원
IPC: H01J1/30
CPC classification number: H01J29/96 , H01J1/46 , H01J3/021 , H01J29/02 , H01J29/467 , H01J31/127 , H01J2329/92 , H01L27/12 , H01L29/78669
Abstract: PURPOSE: A field emission display is provided to prevent the generation of the leakage current between a gate electrode and an emitter by connecting a resistor to the gate electrode. CONSTITUTION: A field emission display includes a gate electrode(202), an emitter(204), and an anode(207). The field emission display includes a resistor(209) connected to the gate electrode in order to intercept the leakage current between the gate electrode and the emitter. The resistor is formed with a metal wire having a large resistant value. The metal wire includes the first metal wire and the second metal wire. The second metal wire is adhered to both ends of the first metal wire. A resistant value of the second metal wire is smaller than the resistant value of the first metal wire.
Abstract translation: 目的：提供场发射显示器，以通过将电阻器连接到栅极电极来防止在栅电极和发射极之间产生漏电流。 构成：场发射显示器包括栅电极（202），发射极（204）和阳极（207）。 场发射显示器包括连接到栅电极的电阻器（209），以便截取栅电极和发射极之间的漏电流。 电阻器由具有大电阻值的金属线形成。 金属线包括第一金属线和第二金属线。 第二金属线粘附到第一金属线的两端。 第二金属线的电阻值小于第一金属线的电阻值。
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公开(公告)号：KR100388063B1
公开(公告)日：2003-06-27
申请号：KR1020000078264
申请日：2000-12-19
Applicant: 한국전자통신연구원
IPC: H01L27/04
Abstract: PURPOSE: A method for fabricating a power integrated circuit is provided to remarkably reduce a high temperature annealing process for fabricating the power integrated circuit, by mixing a non-reduced surface field(RESURF) n-lateral double diffused metal oxide semiconductor(LDMOS) transistor and a RESURF p-LDMOS transistor. CONSTITUTION: The power integrated circuit includes the RESURF LDMOS transistor using a silicon-on-insulator, the non-RESURF LDMOS transistor of an opposite type to the RESURF LDMOS transistor and a logic complementary metal oxide semiconductor(CMOS). The regions where the logic CMOS as a low voltage device and an LDMOS transistor as a high power device are fabricated are doped with the same impurity type in a silicon substrate.
Abstract translation: 目的：提供一种用于制造功率集成电路的方法，以通过混合非减小表面场（RESURF）n型横向双扩散金属氧化物半导体（LDMOS）晶体管来显着减少用于制造功率集成电路的高温退火工艺 和RESURF p-LDMOS晶体管。 构成：功率集成电路包括使用绝缘体上硅的RESURF LDMOS晶体管，与RESURF LDMOS晶体管和逻辑互补金属氧化物半导体（CMOS）相反类型的非RESURF LDMOS晶体管。 作为低电压器件的逻辑CMOS和作为高功率器件的LDMOS晶体管被制造的区域在硅衬底中掺杂有相同的杂质类型。
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Patent Agency Ranking
公开(公告)号：KR1020030042656A
公开(公告)日：2003-06-02
申请号：KR1020010073394
申请日：2001-11-23
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A method of fabricating a field emission display is provided to heighten the emission efficiency of the emitter by forming the carbon nanotube in the emitter vertical to the substrate. CONSTITUTION: In a method of fabricating a field emission display, an anode electrode(8) and a phosphor layer(7) are sequentially formed on the entire surface of a front substrate(2). A cathode electrode(3) is formed on the surface of a rear substrate(1). A carbon nanotube resin is coated onto the cathode electrode, and heat-treated to form an emitter(10). The front and the rear substrates are sealed to each other. After the formation of the cathode electrode, an insulating layer(5) is formed on the cathode electrode, and a gate electrode(6) is formed on the insulating layer. The carbon nanotube resin contains binder, conductive powder, and carbon nanotube.
Abstract translation: 目的：提供一种制造场发射显示器的方法，以通过在垂直于衬底的发射体中形成碳纳米管来提高发射器的发射效率。 构成：在制造场发射显示器的方法中，在前基板（2）的整个表面上依次形成阳极电极（8）和荧光体层（7）。 在后基板（1）的表面上形成阴极电极（3）。 将碳纳米管树脂涂覆到阴极上，进行热处理以形成发射体（10）。 前基板和后基板彼此密封。 在阴极电极形成之后，在阴极上形成绝缘层（5），在绝缘层上形成栅电极（6）。 碳纳米管树脂含有粘合剂，导电粉末和碳纳米管。
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公开(公告)号：KR100385858B1
公开(公告)日：2003-06-02
申请号：KR1020000082804
申请日：2000-12-27
Applicant: 한국전자통신연구원
IPC: H01L27/092
Abstract: PURPOSE: A power device having a trench drain field plate is provided to control extension of space charges at the edge of a gate by including a trench structure in a drift region, and to obtain a breakdown voltage and a low on-resistance by improving reduced surface field(RESURF) effect. CONSTITUTION: A buried layer of the first conductivity type and the epi layer of the second conductivity type are formed on a silicon substrate. A diffusion layer of the first conductivity type as a channel portion is formed on the buried layer. The drift region of the second conductivity type is partially formed on the epi layer. A gate insulation layer is partially formed in the diffusion layer and the drift region. A part of the drift region is formed of a trench structure so that the edge of the gate partially extends in the trench. A drain field plate is formed on an insulation layer having a thickness different from that of the gate insulation layer, connected from the inside of the trench to a drain.
Abstract translation: 目的：提供一种具有沟槽漏极场板的功率器件，以通过在漂移区中包括沟槽结构来控制栅极边缘处的空间电荷的扩展，并且通过改进还原而获得击穿电压和低导通电阻 表面场（RESURF）效应。 构成：在硅衬底上形成第一导电类型的埋层和第二导电类型的外延层。 在掩埋层上形成作为沟道部分的第一导电类型的扩散层。 第二导电类型的漂移区部分形成在外延层上。 栅绝缘层部分地形成在扩散层和漂移区中。 漂移区的一部分由沟槽结构形成，使得栅极的边缘部分地在沟槽中延伸。 漏极场板形成在厚度不同于栅极绝缘层的绝缘层上，从沟槽内部连接到漏极。
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公开(公告)号：KR100371141B1
公开(公告)日：2003-02-06
申请号：KR1020000004139
申请日：2000-01-28
Applicant: 한국전자통신연구원
IPC: H01S3/10
Abstract: PURPOSE: A device and method of adjusting temperature for a local area by radiating 2-bandwidth wave laser is provided to adjust the temperature of the local area by concurrently using electromagnetic fields of both short wave bandwidth and of long wave bandwidth even in case of heating the laser ray, even if an output of electromagnetic field of short wave bandwidth become at low state. CONSTITUTION: A long wave radiation device radiates a long wave bandwidth of an electromagnetic field, while a short wave radiation device radiates a short wave bandwidth of the electromagnetic field. A focusing device intensively radiates the long wave bandwidth of the electromagnetic field on a predetermined area including information recording area of a recording medium, and intensively radiates the short wave bandwidth of the electromagnetic field on a local area of the predetermined area. The long wave radiation device and the short wave radiation device have modulating means for modulating the strength of the electromagnetic field according to each time, respectively.
Abstract translation: 目的：提供一种通过发射2带宽的波长激光来调节局部区域温度的装置和方法，通过同时使用短波带宽和长波带宽的电磁场来调节局部区域的温度，即使在加热的情况下 激光射线，即使短波带宽的电磁场输出变为低电平状态。 构成：长波辐射装置辐射电磁场的长波带宽，而短波辐射装置辐射电磁场的短波带宽。 聚焦装置在包括记录介质的信息记录区域的预定区域上集中地辐射电磁场的长波带宽，并且在预定区域的局部区域上集中地辐射电磁场的短波带宽。 长波辐射装置和短波辐射装置分别具有调制装置，用于根据每次调制电磁场的强度。
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公开(公告)号：KR1020020091620A
公开(公告)日：2002-12-06
申请号：KR1020010030447
申请日：2001-05-31
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A field emission display device is provided to improve a yield of the field emission display device by forming a TFT(Thin Film Transistor) having an off-set region and a field emitter in the inside of dot pixels of a lower substrate. CONSTITUTION: A channel(402) of a TFT is formed on a part of an organic substrate(401). The channel(402) is formed with undoped poly-crystalline silicon. A source(403) and a drain(404) are formed on both sides of the channel(402). The source(403) and the drain(404) are formed with doped poly-crystalline silicon. A gate insulating layer(405) is formed on the substrate(401) including the channel(402), the source(403), and the drain(404) of the TFT. The gate insulating layer(405) is formed an oxide layer. A gate(406) is formed on a part of the gate insulating layer(405). The gate(406) is formed with metal or doped poly-crystalline silicon. The gate(406) is vertically overlapped with a part of the source(403) and the channel(402). The gate(406) is not overlapped with the drain(404). An interlayer dielectric(407) is formed on the substrate(401). A drain electrode(408) is formed on a part of the interlayer dielectric(407). A buffer electrode(409) is formed on a part of the drain electrode(408). A field emission layer(410) is formed on formed on a part of the buffer electrode(409). A transparent electrode(422) is formed on a glass substrate(421). A plurality of dot pixels including fluorescent materials(423) are formed on the transparent electrode(422).
Abstract translation: 目的：提供场致发射显示装置，通过在下基板的点像素的内部形成具有偏移区域和场发射极的TFT（薄膜晶体管）来提高场致发射显示装置的产量。 构成：TFT的通道（402）形成在有机基板（401）的一部分上。 通道（402）由未掺杂的多晶硅形成。 源（403）和漏极（404）形成在通道（402）的两侧。 源极（403）和漏极（404）由掺杂的多晶硅形成。 在包括TFT的沟道（402），源极（403）和漏极（404）的衬底（401）上形成栅极绝缘层（405）。 栅极绝缘层（405）形成氧化物层。 栅极（406）形成在栅极绝缘层（405）的一部分上。 栅极（406）由金属或掺杂的多晶硅形成。 门（406）与源（403）和通道（402）的一部分垂直重叠。 栅极（406）不与漏极（404）重叠。 在基板（401）上形成层间电介质（407）。 漏极电极（408）形成在层间电介质（407）的一部分上。 缓冲电极（409）形成在漏电极（408）的一部分上。 形成在缓冲电极（409）的一部分上的场致发射层（410）。 透明电极（422）形成在玻璃基板（421）上。 在透明电极（422）上形成包括荧光材料（423）的多个点像素。
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公开(公告)号：KR1020020051212A
公开(公告)日：2002-06-28
申请号：KR1020000080800
申请日：2000-12-22
Applicant: 한국전자통신연구원
IPC: G11B7/124 , G11B7/1353 , G11B7/1387
Abstract: PURPOSE: An optical data storage device using an SIL(Solid Immersion Lens) and a waveguide diffraction grating coupler is provided to install an optical storage head device combining the waveguide diffraction grating coupler with the SIL and a cartridge, and to use an optical fiber for inducing light, thereby obtaining high storage density without polluting a head of an optical storage device and a storage medium. CONSTITUTION: A recording medium(101) rotates on the basis of the first rotation hub in a cartridge. One end of a rotary arm(102) is fixed into the second rotation hub in the cartridge. A flying head(104) is attached to a free end of the rotary arm, and writes data on the recording medium or reads the data from the recording medium. An optical waveguide is installed up to outside of the cartridge from the flying head. The rotary arm rotates within an angle where the rotary arm is capable of guiding the flying head up to an utmost inner track from an utmost outer track of the cartridge.
Abstract translation: 目的：提供使用SIL（固体浸没透镜）和波导衍射光栅耦合器的光学数据存储装置，以安装将波导衍射光栅耦合器与SIL和盒组合在一起的光存储头装置，并使用光纤 诱导光，从而获得高存储密度而不污染光学存储装置和存储介质的头部。 构成：记录介质（101）基于盒中的第一旋转毂旋转。 旋转臂（102）的一端固定在盒中的第二旋转毂中。 飞头（104）附接到旋转臂的自由端，并将数据写入记录介质或从记录介质读取数据。 光学波导从飞头安装到盒的外部。 旋转臂在旋转臂能够从盒的最外侧轨迹引导飞头到最大内轨的角度内旋转。
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