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    Carbon-based material for electron emission source, electron emission source containing the carbon-based material, electron emission device including the electron emission source, and method of preparing electron emission source
    253.
    发明公开
    Carbon-based material for electron emission source, electron emission source containing the carbon-based material, electron emission device including the electron emission source, and method of preparing electron emission source 有权
    材料基于碳的电子发射源，与具有电子发射源的碳基电子发射器件的材料的电子发射源，和一种制造电子发射源的方法

    公开(公告)号：EP1926121A3

    公开(公告)日：2008-07-09

    申请号：EP07121604.8

    申请日：2007-11-27

    Applicant: Samsung SDI Co., Ltd.

    Inventor： Cho, Sung-Hee

    IPC: H01J31/12

    CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J29/04 ,  H01J2201/30446

    Abstract: A carbon-based material for electron emission sources, electron emission sources (150) containing the carbon-based material, an electron emission device including the electron emission sources (150), and a method of preparing the electron emission sources are provided. The carbon-based material has at least one characteristic selected from the group consisting of a ratio of h2 to h1 (h2/h1) 1.2, where h2 denotes the relative intensity of a second peak which is a peak in a Raman shift range of 1350±20 cm - 1, and h1 denotes the relative intensity of a first peak which is a peak in a Raman shift range of 1580±20 cm -1 in the Raman spectrum obtained by the radiation of a laser beam having a wavelength of 488±10 nm, 514.5±10 nm, 633±10 nm or 785±10 nm, FWHM2 denotes the full width at half maximum of the second peak, and FWHM1 denotes the full width at half maximum of the first peak. The electron emission sources (150) containing the carbon-based material have long lifespan and a high current density.

    ELECTRON-EMITTING ELECTRODE AND METHOD OF MANUFACTURING THE SAME
    259.
    发明授权
    ELECTRON-EMITTING ELECTRODE AND METHOD OF MANUFACTURING THE SAME 失效
    对于电子电极和方法及其

    公开(公告)号：EP0783763B1

    公开(公告)日：2000-05-17

    申请号：EP96924152.0

    申请日：1996-07-19

    Applicant: Casio Computer Co., Ltd. ,  Stanley Electric Co., Ltd.

    Inventor： NAKAMURA, Osamu ,  SUZUKI, Shigemi 2972, Kamiyabe-cho

    IPC: H01J1/30 ,  H01J61/78 ,  H01J61/067 ,  H01J17/06

    CPC classification number: B82Y10/00 ,  G02F1/1336 ,  H01J1/30 ,  H01J1/3042 ,  H01J9/022 ,  H01J9/025 ,  H01J61/0677 ,  H01J61/305 ,  H01J61/32 ,  H01J61/70 ,  H01J61/72 ,  H01J2201/30446 ,  H01J2217/49271 ,  H01J2329/00

    Abstract: An yttrium film (34) is formed on a base plate (33) made of an Ni-Cr alloy (INCONEL 601), by vapor deposition (achieved by resistance heating or application of an electron beam) or sputtering, to a thickness ranging from 1000Å to about 3000Å. The resultant structure consisting of the base plate (33) and the yttrium film (34) is placed on a table (32) provided in a reaction furnace (31) which has a gas inlet port (38) and a gas outlet port (39). Hydrogen is introduced into the furnace (31) through the gas inlet port (38), thus filling the furnace (31) with hydrogen. The concentration of oxygen and/or oxygen-containing substance should be 1 % or less by volume. The oxygen-containing substance is water, which exists in the form of vapor. The hydrogen atmosphere is heated from normal temperature to about 600 °C, thus heating the structure at about 600 °C for 10 to 60 minutes, thereby forming an yttrium oxide film (36), which covers a body (35) of the yttrium film. Thereafter, the yttrium oxide film (36) is dehydrogenated, it is heated at 350 °C or more for 15 minutes in an atmosphere having a pressure reduced to 1 x 10-3 Torr or less, thereby removing the hydrogen from the yttrium oxide film (36). As a result, there is manufactured an electron-emitting electrode which has good electron-emitting property.

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