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    Ultraviolet method of embedding structures in photocerams
    281.
    发明申请
    Ultraviolet method of embedding structures in photocerams 有权
    紫外线包埋结构在光油中的应用

    公开(公告)号：US20020139769A1

    公开(公告)日：2002-10-03

    申请号：US09821918

    申请日：2001-03-30

    Applicant: The Aerospace Corporation

    Inventor： Henry Helvajian ,  Peter D. Fuqua ,  William W. Hansen

    IPC: B44C001/22 ,  C03C015/00

    CPC classification number: B81C1/00492 ,  B44C1/227 ,  B44C1/228 ,  B81C2201/0133 ,  B81C2201/0143 ,  C03C23/0025

    Abstract: A laser direct write method creates true three dimensional structures within photocerams using an focused pulsed ultraviolet laser with a wavelength in a weakly absorbing region of the photoceram material. A critical dose of focused laser UV light selectively exposes embedded volumes of the material for subsequent selective etching. The photoceram material exposure is nonlinear with the laser fluence and the critical dose depends on the square of the per shot fluence and the number of pulses. The laser light is focused to a focal depth for selective volumetric exposure of the material within a focal volume within the remaining collateral volumes that is critically dosed for selecting etching and batch fabrication of highly defined embedded structures.

    Abstract translation: 激光直接写入方法使用在光致抗蚀剂材料的弱吸收区域中具有波长的聚焦脉冲紫外激光器在光泽内产生真正的三维结构。 聚焦激光UV光的关键剂量选择性地暴露了材料的嵌入体积，用于随后的选择性蚀刻。 光泽材料暴露是非线性的，具有激光注量，临界剂量取决于每个射流注量的平方和脉冲数。 激光被聚焦到焦点深度，用于在残留的临时体积内的焦点体积内材料的选择性体积暴露，其被批量选择用于选择高度限定的嵌入结构的蚀刻和批量制造。

    MANUFACTURING METHOD OF MEMS DEVICE
    282.
    发明公开
    MANUFACTURING METHOD OF MEMS DEVICE 审中-公开

    公开(公告)号：US20240351865A1

    公开(公告)日：2024-10-24

    申请号：US18622059

    申请日：2024-03-29

    Applicant: Xintec Inc.

    Inventor： Jiun-Yen LAI ,  Wei-Luen SUEN ,  Ming-Chung CHUNG ,  Chih-Wei LIU

    IPC: B81C1/00

    CPC classification number: B81C1/00825 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2201/0146 ,  B81C2201/0159

    Abstract: A manufacturing method of a micro electro mechanical system (MEMS) device includes forming a buffer protection layer on a semiconductor structure, wherein the semiconductor structure includes a wafer, a MEMS membrane, and an isolation layer between the wafer and the MEMS membrane, and the buffer protection layer is located in a slit of the MEMS membrane and on a surface of the MEMS membrane facing away from the isolation layer; etching the wafer to form a cavity such that a portion of the isolation layer is exposed though the cavity; etching the portion of the isolation layer; and removing the buffer protection layer.

    Fluid sensor system
    284.
    发明授权
    Fluid sensor system 有权

    公开(公告)号：US12044646B2

    公开(公告)日：2024-07-23

    申请号：US17321130

    申请日：2021-05-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Chwen Yu

    IPC: G01N27/22 ,  B81C1/00

    CPC classification number: G01N27/226 ,  B81C1/00531 ,  G01N27/227 ,  B81C2201/0143

    Abstract: The present disclosure provides a fluid sensor and a method for fabricating a fluid sensor. The fluid sensor includes a substrate including a first material and having a first surface and a second surface opposite to the first surface, wherein the substrate further comprises a recess recessed from the first surface, a first conductive layer over the first surface of the substrate, a protection layer between the first surface of the substrate and the first conductive layer, wherein the protection layer includes a second material, and a through via connected to the recess.

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