Abstract:
PROBLEM TO BE SOLVED: To enable improvement in avoiding impurity mixing into inside a semiconductor material, in treating the semiconductor material with an ion beam generated from an ion source. SOLUTION: An emitter generating the ion beam is provided. Especially, a liquid metal alloy ion source (LMAIS) includes binary alloy PrSi as a raw material to be the ion source. The raw material includes only Si ion and Pr ion, not including a material mixing into inside the semiconductor material as an impurity. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a charged particle source with automated tip formation. SOLUTION: A charged particle device includes: an emitter unit including an emitter tip 13; a voltage supply unit 222 configured to provide a constant voltage to generate a stable extraction field at the emitter tip; a pulsed voltage supply component 224 configured to provide a pulsed voltage to generate a pulsed extraction field on top of the stable extraction field; measuring units 142, 142', 142" for measuring an emitter characteristic; and a control unit 130 configured to receive a signal from the measuring units, and configured to control the pulsed voltage supply component. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a charged particle beam device with charging and/or contamination of samples reduced. SOLUTION: The charged particle beam device comprises particle supply sources 13, 14, 16 for providing charged particle beams 31, optical devices 18, 20, 22, 24, 26, 27 for directing the charged particle beams onto the sample and an ozone unit for reducing the charging and/or contamination of the sample. The ozone unit comprises ozone supply sources 34, 35, 36 and a sample nozzle unit 38 for directing an ozone gas flow to the sample 28. Further, the charged particle beam device comprises the particle supply sources, optical devices, a detector 30 and a gas unit for reducing the charging and/or contamination of the detector. The gas unit comprises gas supply sources 34, 35, 37 and a detector nozzle unit 40 for directing a gas flow to the detector. Furthermore, the method for operating the charged particle beam device is provided. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an emitter for a charged particle beam apparatus. SOLUTION: The emitter is provided with a filament (3) fixed to and extended between a first and a second support parts (2), an emitter tip part (4)mounted on the filament (3) and a stabilizing element (6) mounted on a third support part (5) and the filament (3). The first, second and third support parts (2, 5) define a triangle, and as a result, the stabilizing element (6) will be extended at least partially in the direction of crossing an extension direction of the filament at right angles. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an analysis system and a charged particle beam device by which a high-speed and high-quality imaging of a test piece can be made with a short acting distance and a compact design, and contrast of the image can be increased. SOLUTION: This is a charged particle unit which deflects and energy selects charged particles of a charged particle beam. Double focus sector units 425, 425 for deflecting the charged particle beam and an energy filter 460 for forming the potential are provided, and thereby, the charged particles of the charged particle beam are changed its direction at the potential saddle point according to the energy of the charged particles. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a magnetic deflector assembly having a high scanning speed and accuracy.SOLUTION: A magnetic deflector assembly (120) is disclosed which is configured for scanning a primary electron beam and adapted for providing an upgrade kit for a wafer imaging system. The magnetic deflector assembly (120) comprises at least one magnetic deflector for scanning the primary electron beam over a wafer in one direction. The at least one magnetic deflector includes at least two coils (320-1 and 320-2) forming a pair of coil units (302A and 302B, or 304A and 304B). The number of turns (321-1 and 321-2) in the at least two coils is 8 or less, and a maximum dimension of a cross section of a coil-forming wire or a coil-forming conductor is 0.2 mm or less.
Abstract:
PROBLEM TO BE SOLVED: To provide an improved electron gun arrangement for generating a primary electron beam for a wafer imaging system.SOLUTION: An electron gun arrangement comprises: a controller (116) configured for switching between a normal operation and a cleaning operation; a field emitter (5) having an emitter tip adapted for providing electrons; an extractor electrode (8) adapted for extracting an electron beam from an emitter tip electrode; a suppressor electrode (9) arranged radially outside the emitter; and an auxiliary emitter electrode (16) arranged radially outside the suppressor electrode and provided as a thermal electron emitter for thermally emitting electrons towards an optical axis. The suppressor electrode is at first and second potentials, relative to the extractor electrode, during the normal operation and the cleaning operation, respectively.
Abstract:
PROBLEM TO BE SOLVED: To improve the resolution of charged particle beam devices.SOLUTION: An emitter assembly for emitting a charged particle beam along an optical axis is provided. The emitter assembly housed in a gun chamber (20) includes: an emitter (5) which has an emitter tip (15) that is positioned at a first plane perpendicular to the optical axis, and which is configured to be biased to a first potential; and an extractor (112) which has an opening that is positioned at a second plane perpendicular to the optical axis, and which is configured to be biased to a second potential, where the second plane has a first distance from the first plane of 2.25 mm or above.