公开(公告)号：KR100945323B1

公开(公告)日：2010-03-08

申请号：KR1020080116392

申请日：2008-11-21

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나루시마겐사쿠 ,  와카바야시사토시 ,  다다구니히로

IPC: H01L21/205 ,  H01L21/3205

CPC classification number: C23C16/14 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/56

Abstract: 웨이퍼 W를 수용하는 챔버(31) 내에 있어서, 적어도 표면이 Ni함유 재료로 이루어지는 샤워헤드(40)로부터 TiCl
4 가스를 포함하는 처리 가스를 토출시켜 챔버(31) 내에 배치된 웨이퍼 W의 표면에 Ti막을 성막함에 있어, 샤워헤드(40)의 온도를 300℃ 이상 450℃ 미만의 온도로 하고, TiCl
4 가스 유량을 1~12mL/min(sccm)으로 하거나, 또는 TiCl
4 가스 분압을 0.1~2.5Pa로 해서 소정 매수의 웨이퍼 W에 대해 Ti막을 성막하고, 그 후, 샤워헤드(40)의 온도를 200~300℃로 해서 챔버(31) 내에 ClF
3 가스를 도입해서 챔버(21) 내를 클리닝한다.

公开(公告)号：KR1020090028804A

公开(公告)日：2009-03-19

申请号：KR1020097002282

申请日：2007-07-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나루시마겐사쿠 ,  다다구니히로 ,  와카바야시사토시 ,  사이토우데츠야

IPC: H01L21/205 ,  H01L21/31

CPC classification number: C23C16/45565 ,  C23C16/45574

Abstract: In a gas supply device called a gas shower head or the like, the occurrence of dense areas of particles such as cross-like particles is suppressed and the degree of freedom of process conditions is increased by making more uniform the flow velocity distribution of gas flows from the center to the outer peripheral parts of a board along the circumferential direction than before. The arrangement pattern of gas supply holes formed in the shower plate of the gas supply device is so set that these holes are arranged on a large number of concentric circles and that a gas supply hole on a concentric circle and gas supply holes nearest that gas supply hole and on concentric circles respectively inwardly and outwardly adjacent to that concentric circle are not arranged in the radial direction of the concentric circles.

Abstract translation: 在称为气体喷淋头等的气体供给装置中，通过使气流的流速分布更均匀，抑制了诸如十字形颗粒的致密区域的出现，并且加工条件的自由度增加 从圆盘方向的中心到外周部分比以前。 形成在气体供给装置的喷淋板中的气体供给孔的布置图案被设定为使得这些孔布置在大量同心圆上，并且同心圆上的气体供应孔和最靠近气体供应的气体供应孔 孔和同心圆分别向内和向外邻近该同心圆，并不排列在同心圆的径向方向上。

公开(公告)号：KR1020080007496A

公开(公告)日：2008-01-21

申请号：KR1020077028046

申请日：2007-04-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 이이타카유키 ,  와카바야시사토시 ,  나루시마겐사쿠 ,  오카베신야

IPC: H01L21/205 ,  H01L21/28

CPC classification number: C23C16/14 ,  C23C16/045 ,  C23C16/45565 ,  C23C16/5096 ,  H01L21/28556 ,  H01L21/76843

Abstract: In a chamber (1) having a shower head (10) and an electrode (8) functioning as a pair of parallel plate electrodes, a wafer (W) provided with a hole having a front diameter of 0.13 mum or less and/or an aspect ratio of 10 or more is arranged. While introducing a processing gas containing TiCl4 gas and H2 gas, a high frequency power is supplied from a high frequency power supply (34) to the shower head (10) and a plasma is formed between them. A Ti film is deposited on the wafer by accelerating the reaction of processing gas by the plasma. In this regard, the value of the high frequency power (W)/the flow rate (mL/min(sccm)) of TiCl4 gas is set at 67 or less.

Abstract translation: 在具有淋浴喷头（10）的室（1）和作为一对平行板电极的电极（8）中，设置有前径为0.13μm以下的孔的晶片（W）和/或 纵横比为10以上。 在引入含有TiCl 4气体和H 2气体的处理气体的同时，从高频电源（34）向喷淋头（10）供给高频电力，并在它们之间形成等离子体。 通过等离子体加速处理气体的反应，在晶片上沉积Ti膜。 在这方面，TiCl 4气体的高频功率（W）/流量（mL / min（sccm））的值设定为67以下。

公开(公告)号：KR1020080007495A

公开(公告)日：2008-01-21

申请号：KR1020077028037

申请日：2007-04-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 이이타카유키 ,  와카바야시사토시 ,  나루시마겐사쿠 ,  오카베신야

IPC: H01L21/205 ,  H01L21/28

CPC classification number: C23C16/045 ,  C23C16/14 ,  C23C16/45565 ,  C23C16/5096 ,  H01L21/28556 ,  H01L21/76843

Abstract: In a chamber (1) having a shower head (10) and an electrode (8) functioning as a pair of parallel plate electrodes, a wafer (W) provided with a hole having a front diameter of 0.13 mum or less and/or an aspect ratio of 10 or more is arranged. A Ti film is deposited while reducing the amount of ions reaching the bottom of the hole when the plasma is formed by introducing TiCl4 gas, H2 gas and a rare gas having an atomic weight larger than that of Ar gas as a processing gas.

Abstract translation: 在具有淋浴喷头（10）的室（1）和作为一对平行板电极的电极（8）中，设置有前径为0.13μm以下的孔的晶片（W）和/或 纵横比为10以上。 当通过引入TiCl 4气体，H 2气体和具有比Ar气体的原子量大的稀有气体作为处理气体形成等离子体时，沉积Ti膜，同时减少到达孔底部的离子的量。

公开(公告)号：KR1020070087084A

公开(公告)日：2007-08-27

申请号：KR1020077016175

申请日：2003-12-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다다구니히로 ,  요코이히로아키 ,  와카바야시사토시 ,  나루시마겐사쿠

IPC: C23C16/455 ,  H01L21/205

CPC classification number: C23C16/45523 ,  C23C16/4408 ,  C23C16/50 ,  H01L21/28562

Abstract: A film-forming method wherein a certain thin film is formed on a substrate to be processed (W) using plasma CVD comprises first and second steps performed alternately at least once. In the first step, a first plasma is generated in a process chamber (51) in which the substrate (W) is housed while supplying a compound gas containing a component for the thin film and a reducing gas into the process chamber (51). In the second step following the first step, a second plasma is generated in the process chamber (51) while supplying the reducing gas into the process chamber (51).

Abstract translation: 使用等离子体CVD在被处理基板（W）上形成某个薄膜的成膜方法包括交替进行至少一次的第一和第二工序。 在第一步骤中，在容纳基板（W）的处理室（51）中产生第一等离子体，同时向处理室（51）提供含有薄膜成分的复合气体和还原气体。 在第一步骤之后的第二步骤中，在处理室（51）中产生第二等离子体，同时将还原气体供应到处理室（51）中。

公开(公告)号：KR101870501B1

公开(公告)日：2018-06-22

申请号：KR1020160010166

申请日：2016-01-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나루시마겐사쿠 ,  호타다카노부 ,  마루야마도모히사 ,  아이바야스시

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/02 ,  H01L21/205 ,  C23C16/455

Abstract: 원료가스로서 WCl가스를이용한 ALD 법에의해, 높은생산성으로매립성이양호한텅스텐막을성막할수 있는텅스텐막의성막방법을제공한다. 피처리기판이수용되며, 감압분위기하에보지된챔버내에, 텅스텐원료가스로서의염화텅스텐가스, 및염화텅스텐가스를환원하는환원가스를, 챔버내의퍼지를사이에두고교대로공급하는 ALD 법에의해피처리기판의표면에텅스텐막을성막할때, 염화텅스텐가스를공급할때에, ALD 반응이주체가될 정도로환원가스를첨가한다.

公开(公告)号：KR101102739B1

公开(公告)日：2012-01-05

申请号：KR1020097016306

申请日：2008-01-23

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 와카바야시사토시 ,  나루시마겐사쿠

IPC: H01L21/3205 ,  H01L21/205 ,  H01L21/28 ,  H01L21/768

CPC classification number: H01L21/76843 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76877

Abstract: 본 발명에 의한 성막 방법은, 층간 절연막(520) 상 및 콘택트 홀(530)의 바닥부의 실리콘 함유 표면(512) 상에 티탄막을 형성하는 티탄막 형성 공정, 이 티탄막을 전부 질화하여 단일의 질화 티탄막(550)을 형성하는 질화 공정, 및 질화 티탄막 상에 텅스텐막(560)을 형성하는 텅스텐막 형성 공정을 갖는다. 이에 따르면, 티탄층의 변질에 의한 텅스텐막의 박리를 방지하면서, 종래보다도 베리어층을 얇게 하여, 생산성을 향상시킬 수 있다.

公开(公告)号：KR100996012B1

公开(公告)日：2010-11-22

申请号：KR1020077028037

申请日：2007-04-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 이이타카유키 ,  와카바야시사토시 ,  나루시마겐사쿠 ,  오카베신야

IPC: H01L21/205 ,  H01L21/28

CPC classification number: C23C16/045 ,  C23C16/14 ,  C23C16/45565 ,  C23C16/5096 ,  H01L21/28556 ,  H01L21/76843

Abstract: 한 쌍의 평행 평판 전극으로서 기능하는 샤워 헤드(10) 및 전극(8)을 갖는 챔버(1) 내에, 개구 직경이 0.13㎛ 이하 및/또는 어스펙트비가 10 이상인 홀을 갖는 웨이퍼(W)를 배치한다. 처리 가스로서 TiCl
4 가스 및 H
2 가스 및 Ar 가스보다 원자량이 큰 희가스를 도입하여 상기 플라즈마가 형성되었을 때의 상기 홀의 저부에 도달하는 이온량을 저감하면서 Ti막을 성막한다.

公开(公告)号：KR1020100015932A

公开(公告)日：2010-02-12

申请号：KR1020097022392

申请日：2008-04-15

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나루시마겐사쿠 ,  와카바야시사토시 ,  젠코데츠

IPC: C23C16/08 ,  C23C16/509 ,  C23C16/52 ,  H01L21/205

CPC classification number: C23C16/14 ,  C23C16/505 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76843

Abstract: A Ti-film formation method includes: a step of placing a substrate to be treated and having an Si portion on a table; a step of heating the substrate to be treated; a step of setting a pressure in a chamber to a predetermined value; a step of introducing a treating gas containing TiClgas and a reduction gas; a step of forming a high-frequency field by high-frequency formation means so as to obtain the treating gas in a plasma state; and a step of causing a reaction by the Ticlgas and the reduction gas on the surface of the substrate to be treated. When the reaction is used to form the Ti-film on the Si portion of the substrate to be treated, the pressure in the chamber and the high-frequency power to be applied are controlled so as to suppress generation of TiSi at the Si portion of the substrate to be treated.

Abstract translation: Ti膜形成方法包括：将待处理的基板和Si部分放置在台面上的步骤; 加热被处理基板的步骤; 将室内的压力设定为规定值的步骤; 引入含有TiCl气体和还原气体的处理气体的工序; 通过高频形成装置形成高频场的步骤，以获得处于等离子体状态的处理气体; 以及由待处理的基板的表面上的Ticlgas和还原气体引起反应的步骤。 当反应用于在被处理基板的Si部分上形成Ti膜时，控制室中的压力和施加的高频功率，以便抑制在Si部分的Ti部分的TiSi的产生 待处理的基材。

公开(公告)号：KR1020080108390A

公开(公告)日：2008-12-15

申请号：KR1020080116392

申请日：2008-11-21

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나루시마겐사쿠 ,  와카바야시사토시 ,  다다구니히로

IPC: H01L21/205 ,  H01L21/3205

CPC classification number: C23C16/14 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/56

Abstract: A manufacturing method of Ti system film and a storage medium are provided to suppress the formation of the NiTi layer even in case of using the shower head after restoring and cleaning the new product shower head or the chemistry by forming the passivation film. A manufacturing method of Ti system film comprises the following processes. The Ti system film is deposited on the surface of the processed article arranged on the main chuck within the chamber by discharging the process gas including the TiCl4 gas from the gas discharge member in which the surface is made of the Ni containing material in the chamber(31). The temperature of the main chuck is between 300‹C and 450‹C. The temperature of the gas discharge member is between 300‹C and 450‹C. The Ti system film is deposited on the processed article by making the TiCl4 gas flow rate to 1~12mL/min(sccm), and TiCl4 gas tension to 0.1~2.5Pa. The chamber is cleaned by introducing the cleaning gas of the fluoride group into the chamber.

Abstract translation: 提供Ti系膜和存储介质的制造方法，即使在通过形成钝化膜恢复和清洁新产品喷头或化学品之后使用淋浴头的情况下也能抑制NiTi层的形成。 Ti系膜的制造方法包括以下工序。 通过从气体排出构件中排出包含TiCl 4气体的工艺气体，在该室内将含有Ni的材料制成的Ti体系膜沉积在设置在室内的主卡盘的被处理物的表面上 31）。 主卡盘的温度在300℃到450℃之间。 气体排出构件的温度在300℃和450℃之间。 通过使TiCl4气体流速为1〜12mL / min（sccm），TiCl4气体张力为0.1〜2.5Pa，将Ti系膜沉积在加工制品上。 通过将氟化物基团的清洁气体引入腔室来清洁腔室。