公开(公告)号：KR100464853B1

公开(公告)日：2005-01-06

申请号：KR1020020034552

申请日：2002-06-20

Applicant: 삼성전자주식회사

Inventor： 이광욱 ,  고용선 ,  황인석

IPC: H01L21/304

CPC classification number: H01L21/67034

Abstract: An instantaneous pressure reducing heating and drying apparatus for an object, such as a wafer, includes a pressure reducing chamber; a vacuum pump for reducing a pressure in the pressure reducing chamber to below atmospheric pressure; a drying chamber installed within the pressure reducing chamber for drying the object that is loaded in the drying chamber; a pressure regulating valve installed in a wall of the drying chamber, wherein when the pressure regulating valve is opened a pressure in the drying chamber is instantaneously reduced to the pressure of the pressure reducing chamber; and a heating means for heating the drying chamber. In operation, the vacuum pump reduces a pressure of the pressure reducing chamber to below atmospheric pressure, and the pressure regulating valve installed in a wall of the drying chamber opens thereby instantaneously reducing the pressure the drying chamber to the reduced pressure of the pressure reducing chamber.

Abstract translation: 用于诸如晶片的物体的瞬时减压加热和干燥设备包括减压室; 真空泵，用于将减压室中的压力降低至低于大气压力; 干燥室，所述干燥室安装在所述减压室内，用于干燥装载在所述干燥室中的所述物体; 压力调节阀，其安装在干燥室的壁中，其中当压力调节阀打开时，干燥室中的压力瞬时减小到减压室的压力; 以及用于加热干燥室的加热装置。 在操作中，真空泵将减压室的压力降低到低于大气压力，并且安装在干燥室的壁中的压力调节阀打开，由此瞬间将干燥室的压力减小到减压室的减压 。

公开(公告)号：KR100462867B1

公开(公告)日：2004-12-17

申请号：KR1020010027323

申请日：2001-05-18

Applicant: 삼성전자주식회사

Inventor： 민충기 ,  고용선 ,  황인석

IPC: H01L21/304

CPC classification number: B01F7/06 ,  B01F3/2261 ,  B01F2215/0096

Abstract: A chemical supply system includes at least two supply pipes for supplying at least two different chemicals; a mixing unit connected to the supply pipes for mixing at least two different chemicals to form a chemical mixture, an exhausting unit for exhausing the chemical mixture externally; and a filtering unit provided between the mixing unit and the exhausting unit for filtering the chemical mixture to prevent chemical particles having more than a predetermined size from being exhausted.

Abstract translation: 化学品供应系统包括至少两个供应管，用于供应至少两种不同的化学品; 连接到供应管的混合单元，用于混合至少两种不同的化学物质以形成化学混合物;排出单元，用于从外部排出化学混合物; 以及过滤单元，设置在混合单元和排出单元之间，用于过滤化学混合物以防止具有大于预定尺寸的化学颗粒被排出。

公开(公告)号：KR1020040105038A

公开(公告)日：2004-12-14

申请号：KR1020030035875

申请日：2003-06-04

Applicant: 삼성전자주식회사

Inventor： 고용선 ,  권성운

IPC: H01L21/28

CPC classification number: H01L21/76831 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76895

Abstract: PURPOSE: A method for forming an interconnection layer in a semiconductor device and a structure thereof are provided to reduce a short of the interconnection layer and an active region by forming a thick insulating layer covering the active region. CONSTITUTION: A first and a second gate electrodes(113,114) are formed on a substrate. A thick insulating layer(112) is formed covering the gate electrodes. A recess pattern is formed in the insulating layer. The width of the insulating layer(L1) is larger than the length between the inner walls of the first and the second gate electrodes and smaller than the length between the outer walls of the first and the second gate electrodes. A first and a second contact holes are formed to expose the first and the second electrode, respectively in the recess pattern. An interconnection layer(116) is formed on the recessed pattern to connect the first and the second electrodes.

Abstract translation: 目的：提供一种用于在半导体器件中形成互连层的方法及其结构，以通过形成覆盖有源区的厚绝缘层来减少互连层和有源区的短路。 构成：在基板上形成第一和第二栅电极（113,114）。 形成覆盖栅电极的厚的绝缘层（112）。 在绝缘层中形成凹部图案。 绝缘层（L1）的宽度大于第一和第二栅电极的内壁之间的长度，并且小于第一和第二栅电极的外壁之间的长度。 形成第一和第二接触孔，以分别在凹陷图案中露出第一和第二电极。 在凹陷图案上形成互连层（116）以连接第一和第二电极。

公开(公告)号：KR1020040100547A

公开(公告)日：2004-12-02

申请号：KR1020030032949

申请日：2003-05-23

Applicant: 삼성전자주식회사

Inventor： 고용선 ,  황인석 ,  윤병문 ,  박철우

IPC: H01L21/304

CPC classification number: H01L21/68728 ,  H01L21/67051

Abstract: PURPOSE: A spin chuck is provided to remove completely particles between wafer fixing pin and an edge of a wafer by converting alternately one wafer fixing pin to the other in one wafer fixing part. CONSTITUTION: A spin chuck includes a spin-motion part(10) for loading a wafer(100) and a plurality of wafer fixing parts(50) on a periphery of the spin-motion part. Each wafer fixing part includes a plurality of protrusion type pins(50a). The wafer fixing part converts one pin to the other by rotating the same using a shaft of the wafer fixing part as the center.

Abstract translation: 目的：提供旋转卡盘，通过在一个晶片固定部分中将一个晶片固定销交替转换为另一个，从而在晶片固定销和晶片边缘之间完全除去颗粒。 构成：旋转卡盘包括用于将旋转运动部件的周边装载晶片（100）的旋转运动部件（10）和多个晶片固定部件（50）。 每个晶片固定部分包括多个突起型销（50a）。 晶片固定部件使用晶片固定部件的轴作为中心将其一个转动到另一个销钉。

公开(公告)号：KR1020040014079A

公开(公告)日：2004-02-14

申请号：KR1020020047250

申请日：2002-08-09

Applicant: 삼성전자주식회사

Inventor： 여인준 ,  송창룡 ,  고용선 ,  윤병문 ,  김경현

IPC: H01L21/304

CPC classification number: H01L21/67051 ,  B08B3/12

Abstract: PURPOSE: An apparatus for cleaning a substrate is provided to prevent the damage of patterns due to ultrasonic vibrations by applying uniformly the ultrasonic vibrations to the cleaning solution supplied to a surface of a semiconductor substrate. CONSTITUTION: An apparatus for cleaning a substrate includes a chuck(210), a cleaning solution supply part, a probe(230), a heat transfer member, and a vibration part. The chuck(210) is used for supporting and rotating a substrate. The cleaning solution supply part is used for supplying the cleaning solution to a surface of the substrate. The probe(230) is in contact with the cleaning solution supplied to the surface of the substrate. An area of the probe(230) is enlarged to the substrate. The heat transfer member is connected to a top part of the probe. The vibration part is connected to the heat transfer member to vibrate the probe(230).

Abstract translation: 目的：提供一种用于清洁基板的装置，以通过均匀地对提供给半导体基板的表面的清洁溶液施加超声波振动来防止由于超声波振动导致的图案的损坏。 构成：用于清洁基板的装置包括卡盘（210），清洁溶液供应部件，探针（230），传热部件和振动部件。 卡盘（210）用于支撑和旋转基板。 清洗液供给部件用于将清洗液供给到基板的表面。 探针（230）与提供给基板表面的清洗溶液接触。 探针（230）的区域扩大到基板。 传热构件连接到探头的顶部。 振动部分连接到传热部件以使探头（230）振动。

公开(公告)号：KR100322545B1

公开(公告)日：2002-03-18

申请号：KR1020000000968

申请日：2000-01-10

Applicant: 삼성전자주식회사

Inventor： 장규환 ,  고용선 ,  송창용 ,  정승필

IPC: H01L21/28

Abstract: 건식 식각에 의한 손상막(damaged layer)을 제거하는 건식 세정을 전 공정으로 이용하는 반도체 장치의 콘택홀(contact hole) 채움 방법을 개시한다. 본 발명의 일 관점은, 건식 식각으로 하부 물질막을 선택적으로 노출하고, 노출되는 하부 물질막 상에 산화성 가스 및 산화물 반응 가스를 포함하는 소오스 가스(source gas)로부터 여기되는 플라즈마(plasma)를 제공하여 건식 식각으로부터 유발된 손상막을 이용하여 제거하는 건식 세정 단계를 수행한다. 이후에, 건식 세정 단계가 수행되는 챔버에 순차적으로 연결되어 클러스터(cluster)화된 별도의 챔버에서 수행되어 건식 세정된 콘택홀 내의 노출되는 하부 물질막 상이 오염원에 노출되는 것을 방지하며, 콘택홀을 채우는 도전막을 형성한다.

公开(公告)号：KR1020010073628A

公开(公告)日：2001-08-01

申请号：KR1020000002393

申请日：2000-01-19

Applicant: 삼성전자주식회사

Inventor： 박천용 ,  조희강 ,  고용선 ,  배경성

IPC: H01L21/31

Abstract: PURPOSE: A method for controlling a lifting in a wafer edge is provided to improve reliability and yield of devices by forming a wafer edge structure resistible against attack and preventing a lifting of a nitride film. CONSTITUTION: A series of semiconductor manufacturing process is performed on a semiconductor substrate. A nitride film(20) is formed on the semiconductor substrate. A sacrificial oxide film(30) is formed on the nitride film. A photoresist is coated on the sacrificial oxide film and a photoresist of a wafer edge is removed by as much as a predetermined interval. The residual photoresist is hardened. The sacrificial oxide film of the edge is removed by using the hardened photoresist as a mask. The photoresist is removed. The nitride film of the edge is removed by using the residual sacrificial oxide film after an etching process as a mask. The sacrificial oxide film is formed by using a chemical vapor deposition method. The step of removing the photoresist of the edge by the predetermined interval is performed by a side rinse and/or EEW.

Abstract translation: 目的：提供一种用于控制晶片边缘中的提升的方法，以通过形成抵抗攻击并防止提升氮化物膜的晶片边缘结构来提高器件的可靠性和产量。 构成：在半导体衬底上进行一系列半导体制造工艺。 在半导体衬底上形成氮化物膜（20）。 在氮化膜上形成牺牲氧化膜（30）。 在牺牲氧化膜上涂覆光致抗蚀剂，并且以预定的间隔去除晶片边缘的光致抗蚀剂。 残留的光致抗蚀剂硬化。 通过使用硬化的光致抗蚀剂作为掩模去除边缘的牺牲氧化膜。 去除光致抗蚀剂。 在蚀刻处理之后，通过使用剩余的牺牲氧化膜作为掩模，去除边缘的氮化物膜。 通过使用化学气相沉积法形成牺牲氧化膜。 通过侧面清洗和/或EEW来进行边缘去除预定间隔的步骤。

公开(公告)号：KR1020000057736A

公开(公告)日：2000-09-25

申请号：KR1020000000968

申请日：2000-01-10

Applicant: 삼성전자주식회사

Inventor： 장규환 ,  고용선 ,  송창용 ,  정승필

IPC: H01L21/28

CPC classification number: H01L21/02063 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/76814 ,  H01L21/76877

Abstract: PURPOSE: An improved method for filling a contact hole is provided to prevent secondary contamination by using a dry cleaning pre-process step and thereby to prevent deterioration of electrical characteristics. CONSTITUTION: When a dry etch process is performed in order that an underlying substrate(100) is selectively exposed for a contact hole(250), a damaged layer(150) is typically produced on the substrate(100) within the contact hole(250). Then, a dry cleaning process is performed to remove or compensate for the damaged layer(150) before filling the contact hole(250). The dry cleaning process uses plasma excited from a source gas including oxidizing gas such as oxygen and oxide reaction gas such as tri-fluoride nitrogen to remove the damaged layer(150). The plasma is excited by microwave and then downwardly supplied to the damaged layer(150). After the dry cleaning process is completed, the contact hole(250) is filled with a conductive layer as the substrate(100) within the contact hole(250) is prevented from being exposed to contamination source.

Abstract translation: 目的：提供一种用于填充接触孔的改进方法，以通过使用干洗预处理步骤来防止二次污染，从而防止电特性的劣化。 构成：当进行干蚀刻工艺以使底层衬底（100）选择性地暴露于接触孔（250）时，通常在接触孔（250）内的衬底（100）上产生损伤层（150） ）。 然后，在填充接触孔（250）之前执行干式清洁处理以去除或补偿损伤层（150）。 干式清洗方法使用从包括氧气等氧化性气体，三氟化氮等氧化物反应气体在内的源气体激发的等离子体来除去损伤层（150）。 等离子体被微波激发，然后向下供应到损坏层（150）。 在完成干洗处理之后，当接触孔（250）内的衬底（100）被防止暴露于污染源时，接触孔（250）填充有导电层。

公开(公告)号：KR1020000056452A

公开(公告)日：2000-09-15

申请号：KR1019990005788

申请日：1999-02-22

Applicant: 삼성전자주식회사

Inventor： 이근택 ,  고용선

IPC: H01L21/28

Abstract: PURPOSE: A method for forming a copper interconnection layer of a semiconductor device is to prevent the occurrence of the overhang phenomenon during the deposition of the copper interconnection layer. CONSTITUTION: A method for forming a copper interconnection layer of a semiconductor device comprises the steps of: forming an insulating layer(13) having a contact hole on a semiconductor substrate(11); forming a copper seed layer(15) on the insulating layer; thermally annealing the resultant semiconductor substrate to flow the copper seed layer and form the copper seed layer on the bottom and both side walls of the contact hole and the insulating layer; and forming a copper layer(17) on the copper seed layer such that the copper layer fills the contact hole. The copper seed layer is formed by a physical vapor deposition method and the copper layer is formed by an electroplating method.

Abstract translation: 目的：形成半导体器件的铜互连层的方法是防止在铜互连层沉积期间出现突出现象。 构成：形成半导体器件的铜互连层的方法包括以下步骤：在半导体衬底（11）上形成具有接触孔的绝缘层（13）; 在绝缘层上形成铜籽晶层（15）; 对所得半导体衬底进行热退火以使铜籽晶层流动并在接触孔的底部和两个侧壁上形成铜籽晶层和绝缘层; 以及在所述铜籽晶层上形成铜层（17），使得所述铜层填充所述接触孔。 通过物理气相沉积法形成铜籽晶层，通过电镀法形成铜层。

公开(公告)号：KR1019990025530A

公开(公告)日：1999-04-06

申请号：KR1019970047195

申请日：1997-09-12

Applicant: 삼성전자주식회사

Inventor： 전재범 ,  손홍성 ,  고용선

IPC: H01L21/302

Abstract: 화학적 및 물리적 방법을 동시에 사용하는 웨이퍼 세정 방법에 관하여 개시한다. 본 발명에서는 상면에 금속층이 형성된 웨이퍼를 순수와 30중량%의 암모니아수가 50:1∼1,000:1의 부피비로 혼합된 희석 암모니아수와, 메가소닉 제너레이터(megasonic generator)를 동시에 사용하여 세정한다.