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公开(公告)号：KR1020110010045A
公开(公告)日：2011-01-31
申请号：KR1020090121107
申请日：2009-12-08
Applicant: 삼성전자주식회사 , 더 리전츠 오브 더 유니버시티 오브 캘리포니아
IPC: H01L29/786 , H01L21/28
CPC classification number: H01L2924/0002 , H01L27/2463 , G11C5/063 , H01L27/2436 , H01L2924/00
Abstract: PURPOSE: A memory semiconductor device, a manufacturing method thereof, and an operation method thereof are provided to improve the degree of integration by arranging word lines in a three dimension. CONSTITUTION: A ground selection structure and a string selection structure are separated from each other. A memory structure comprises sequentially laminated plurality of word lines. The memory structure is arranged between the ground and the string selection structure. A semiconductor pattern(65) covers the upper side and sidewall of the memory structure. The semiconductor pattern is connected to the ground and the string selection structure and crosses the word lines.
Abstract translation: 目的：提供一种存储半导体器件及其制造方法及其操作方法，以通过将字线布置成三维来提高整合度。 构成：地面选择结构和字符串选择结构彼此分离。 存储器结构包括顺序层叠多个字线。 存储器结构布置在地与串选择结构之间。 半导体图案（65）覆盖存储器结构的上侧和侧壁。 半导体图形连接到地和字符串选择结构并与字线交叉。
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公开(公告)号：KR1020100104022A
公开(公告)日：2010-09-29
申请号：KR1020090022145
申请日：2009-03-16
Applicant: 삼성전자주식회사
CPC classification number: H04W36/0083 , H04W36/08 , H04W36/24 , H04W36/245
Abstract: PURPOSE: A method and a system for improving call drop caused by a radio link failure in a mobile communication system are provided to update an ANR(Automatic Neighbor Relation) in consideration of an RLF(Radio Link Failure)_before_HO by transmitting a generated log file after detecting the RLT_before_HO and generating the statistic data and optimize a handover triggering parameter in consideration of the RLF_before_HO. CONSTITUTION: A method for improving call drop caused by a radio link failure in a mobile communication system comprises the steps of: detecting an RLF(Radio Link Failure) occurring before handover triggering; generating a log file or statistic data according to the RLF happening before the handover triggering; updating an NRT(Neighbor Relation Table) and optimizing a handover parameter by considering the statistic data or the log file; allowing a target base station to receive an RRC(Radio Resource Control) reset message including a PCID(Physical Cell ID) and an RNTI(Cell Radio Network Temporary Identifier) from a corresponding terminal(130).
Abstract translation: 目的：提供一种用于改善由移动通信系统中的无线电链路故障引起的呼叫丢弃的方法和系统，用于通过发送生成的日志文件来更新考虑到RLF（无线电链路故障）_before_HO的ANR（自动相邻关系） 在检测到RLT_before_HO之后并且生成统计数据并且考虑到RLF_before_HO来优化切换触发参数。 一种移动通信系统中由无线电链路故障引起的呼叫丢弃的方法，包括以下步骤：检测在切换触发之前发生的RLF（无线链路故障）; 根据在切换触发之前发生的RLF生成日志文件或统计数据; 通过考虑统计数据或日志文件来更新NRT（邻居关系表）和优化切换参数; 允许目标基站从对应的终端（130）接收包括PCID（物理小区ID）和RNTI（小区无线网络临时标识符）的RRC（无线电资源控制）重置消息。
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公开(公告)号：KR1020100092657A
公开(公告)日：2010-08-23
申请号：KR1020090011890
申请日：2009-02-13
Applicant: 삼성전자주식회사
CPC classification number: H04W36/0061 , H04W48/16 , H04W84/18 , H04W88/08
Abstract: PURPOSE: A method and a system for managing neighbor relation in a wireless communication system are provided to improve the entire service quality by efficiently configuring a more stable network in an SON(Self-Organizing Network). CONSTITUTION: A synchronization control unit(307) determines the change of a stored NRT(neighbor Relation Table) of base stations through BS(Base Station) setting information of each module, and an NRT control unit(351) performs a BS adding procedure or BS removing procedure of the stored NRT of an NRT storage unit(352) through the information about the change of the NRT. A neighbor BS optimizer(353) performs the optimization of a transmission and reception signal with a neighbor base station.
Abstract translation: 目的：提供一种用于管理无线通信系统中的邻居关系的方法和系统，以通过在SON（自组织网络）中有效地配置更稳定的网络来提高整个服务质量。 构成：同步控制单元（307）通过BS（基站）各模块的设定信息确定基站的存储的NRT（相邻关系表）的变化，NRT控制单元（351）执行BS添加过程， 通过关于NRT变化的信息，NRT存储单元（352）的存储的NRT的BS去除过程。 相邻BS优化器（353）利用相邻基站执行发送和接收信号的优化。
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公开(公告)号：KR1020100049237A
公开(公告)日：2010-05-12
申请号：KR1020080108326
申请日：2008-11-03
Applicant: 삼성전자주식회사
CPC classification number: H04L67/104 , H04L29/08306 , H04W36/00
Abstract: PURPOSE: An apparatus and a method for establishing peer to peer connection in a cellular wireless communication system are provided to minimize an effect to the cellular wireless communication system by activating the peer to peer receiver terminal. CONSTITUTION: An interpreter(724) confirms the selection result about the P2P(peer to peer) receiver terminal through the first message for informing the selection result about the P2P receiver terminal. A transmitter(722) transmits the second messages including parameters for the base station mode switching to the P2P transmitter terminal. A controller(732) makes the P2P receiver terminal handover with the P2P transmitter terminal. The terminal device comprises a controller and the transmitter transmitting the second message for informing the reception of the first message.
Abstract translation: 目的：提供一种用于在蜂窝无线通信系统中建立对等连接的装置和方法，以通过激活对等接收机终端来最小化对蜂窝无线通信系统的影响。 构成：解释器（724）通过第一个消息确认P2P（对等）接收终端的选择结果，用于通知P2P接收者终端的选择结果。 发射机（722）将包括用于基站模式切换的参数的第二消息发送到P2P发射机终端。 控制器（732）使P2P接收机终端与P2P发送终端切换。 终端设备包括控制器，并且发射机发送用于通知接收第一消息的第二消息。
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公开(公告)号：KR1020080051065A
公开(公告)日：2008-06-10
申请号：KR1020070123002
申请日：2007-11-29
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L27/2436 , H01L27/2463
Abstract: A flash memory and a driving method thereof are provided to remove interference of adjacent cells by easily depleting a body region of a memory cell formed on a semiconductor pin. A local bit line is connected with a bit line on a semiconductor substrate(110) of first conductive type. A local source line is connected with a common source line crossing the bit line. Plural memory cells are connected parallel with the local source line and the bit line. The local bit line and the local source line are vertically spaced apart from each other in the semiconductor substrate, and include a first doped layer(121) and a second doped layer(122). A first select transistor connects the bit line with the local bit line, and a second select transistor connects the common source line with the local source line. A drain select line(DSL) and a source select line(SSL) are connected to the first select transistor and the second select transistor, respectively. Plural word lines are connected to the memory cells.
Abstract translation: 提供闪速存储器及其驱动方法以通过容易地消耗形成在半导体引脚上的存储单元的体区来消除相邻单元的干扰。 局部位线与第一导电类型的半导体衬底（110）上的位线连接。 本地源极线与穿过位线的公共源极线连接。 多个存储单元与本地源极线和位线并联连接。 局部位线和局部源极线在半导体衬底中彼此垂直间隔开，并且包括第一掺杂层（121）和第二掺杂层（122）。 第一选择晶体管将位线与局部位线连接，第二选择晶体管将公共源极线与本地源极线连接。 漏极选择线（DSL）和源选择线（SSL）分别连接到第一选择晶体管和第二选择晶体管。 多个字线连接到存储单元。
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Patent Agency Ranking
公开(公告)号：KR100674965B1
公开(公告)日：2007-01-26
申请号：KR1020050023294
申请日：2005-03-21
Applicant: 삼성전자주식회사
IPC: H01L21/8247
CPC classification number: H01L21/324 , H01L21/28273 , H01L21/28282
Abstract: A method of manufacturing a memory device is provided to secure the stability of erase characteristics by using a blocking oxide layer with a negative fixed oxide charge. A tunneling oxide layer(22), a charge storing layer(23) and a blocking oxide layer(24) are sequentially formed on a semiconductor substrate(20). A heat treatment is performed on the resultant structure under O2, RuO or NH3 gas conditions in order to obtain a negative fixed oxide charge from the blocking oxide layer. A gate electrode layer is formed on the blocking oxide layer. The substrate is partially exposed to the outside by etching selectively the tunneling oxide layer, the charge storing layer, the blocking oxide layer and the gate electrode layer. First and second doped regions are formed in the exposed substrate by using an ion implantation.
Abstract translation: 提供一种制造存储器件的方法，以通过使用具有负固定氧化物电荷的阻挡氧化物层来确保擦除特性的稳定性。 隧道氧化物层（22），电荷存储层（23）和阻挡氧化物层（24）依次形成在半导体衬底（20）上。 在O 2，RuO或NH 3气体条件下对所得结构进行热处理，以从阻挡氧化物层获得负固定的氧化物电荷。 在阻挡氧化物层上形成栅极电极层。 通过选择性地蚀刻隧道氧化物层，电荷存储层，阻挡氧化物层和栅极电极层，将衬底部分地暴露于外部。 通过使用离子注入在暴露的衬底中形成第一和第二掺杂区域。
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公开(公告)号：KR1020070006548A
公开(公告)日：2007-01-11
申请号：KR1020060005532
申请日：2006-01-18
Applicant: 삼성전자주식회사
IPC: H01L27/115 , B82Y10/00
CPC classification number: H01L29/4234 , H01L29/42324 , H01L29/788 , H01L29/792
Abstract: A multi-valued NVM(non-volatile memory) device is provided to increase tunneling current through a tunnel insulation layer by a step type as a voltage applies to a gate electrode increases by interposing a quantum confinement layer between the tunnel insulation layers. A channel region is defined between a source region and a drain region. A charge storage layer(60) in which charges are stored is formed on the channel region. A tunnel insulation layer(54) into which charges tunnels is interposed between the channel region and the charge storage layer, including a quantum confinement layer(66). The tunnel insulation layer further includes a lower tunnel insulation layer(64) and an upper tunnel insulation layer(68) formed on the lower tunnel insulation layer. The quantum confinement layer is interposed between the lower tunnel insulation layer and the upper tunnel insulation layer.
Abstract translation: 提供多值NVM（非易失性存储器）器件，以通过在隧道绝缘层之间插入量子限制层而增加通过隧道绝缘层的隧穿电流，以增加施加到栅电极的电压。 在源极区域和漏极区域之间限定沟道区域。 在沟道区域上形成有电荷存储层（60），其中存储电荷。 隧道绝缘层（54），其中电荷隧道插入在沟道区和电荷存储层之间，包括量子限制层（66）。 隧道绝缘层还包括下隧道绝缘层（64）和形成在下隧道绝缘层上的上隧道绝缘层（68）。 量子限制层介于下隧道绝缘层和上隧道绝缘层之间。
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公开(公告)号：KR100652401B1
公开(公告)日：2006-12-01
申请号：KR1020050012914
申请日：2005-02-16
Applicant: 삼성전자주식회사
IPC: H01L27/115 , B82Y10/00
CPC classification number: H01L29/7881 , H01L29/4232 , H01L29/42324 , H01L29/513 , H01L29/792
Abstract: 반도체 기판 상에 형성된 터널 절연막과, 터널 절연막 상에 형성된 스토리지 노드와, 스토리지 노드 상에 형성된 블로킹 절연막, 및 블로킹 절연막 상에 형성된 제어 게이트 전극을 포함하는 비휘발성 메모리 소자가 개시된다. 스토리지 노드는 트랩 밀도가 서로 다른 적어도 2 이상의 트랩막들을 포함하고, 블로킹 절연막은 실리콘 산화막보다 높은 유전율을 갖는다.
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公开(公告)号：KR1019970018141A
公开(公告)日：1997-04-30
申请号：KR1019950030045
申请日：1995-09-14
Applicant: 삼성전자주식회사
Inventor： 한정희
IPC: H01L21/302
Abstract: 본 발명은 반도체 소자를 형성하기 위한 실리콘 기판의 에칭에 있어서 낮게 에칭 하면서도 충분한 에칭 표면적을 확보할 수 있도록 한 실리콘 기판의 트랜치(Trench) 에칭 방법에 관한 것으로서, 실리론 기판의 제1산화막(SiO
2 ) 상부에 감광막 패턴을 형성하고, 이를 마스크로 하여 제1산화막과 실리콘 기판의 일부분을 연속적으로 에칭하여
형 트랜치 구조를 형성시키는 제1단계; 상기 감광막 패턴 제거한 후 제1산화막 상부와 상기 트랜치 구조에 제2산화막을 형성하는 제2단계; 상기 트랜치 구조의 측면에 형성된 제2산화막을 제외한 제1산화막 상부 및 트랜치 구조의 하부에 형성된 제2산화막을 전면 에칭하는 제3단계; 상기 트랜치 구조의 하부면을 습식 에칭하여
모양의 수직 구조를 형성하는 제4단계; 상기 습식 에칭시 발생하는 산화물과 트랜치 구조의 측벽을 형성하고 있는 제2산화막을 제거하는 제5단계; 및 상기 실리콘 기판의 상부를 산화시킨 후 습식 에칭하여 제거하는 제6단계로 구성되어 있어, 실리콘 기판의 트랜치 구조를 기존의 전형적인
형에서
형으로 변경 형성함으로써, 결국 실리콘 기판을 깊이 파지 않고서도 에칭 표면적을 넓혀 캐패스터 및 아이솔레이션의 영역을 확장시킬 수 있는 장점이 있는 것이다.-
公开(公告)号：KR101548957B1
公开(公告)日：2015-09-02
申请号：KR1020080072112
申请日：2008-07-24
Applicant: 삼성전자주식회사
Abstract: 본발명은긴급통화를위한무선통신시스템및 이를위한방법에관한것으로, 이러한본 발명은긴급통화를위한무선통신시스템에있어서, 긴급통화를요청하는긴급통화단말; 상기긴급통화요청을중계하여서빙기지국에전달하는중계단말; 상기긴급통화요청을수신하면, 긴급통화전송자원을결정하고, 상기결정된긴급통화전송자원을주변기지국이사용하지않도록요청하는서빙기지국; 및상기서빙기지국의요청에따라상기긴급통화전송자원이할당된영역의전송자원의사용을중지하는주변기지국을포함하는것을특징으로하는긴급통화를위한무선통신시스템을제공하며, 이에따른방법을제공한다.
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