公开(公告)号：KR1020070025975A

公开(公告)日：2007-03-08

申请号：KR1020060064633

申请日：2006-07-10

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 나가하타세이지 ,  우에마츠고지 ,  나가하다히데아키

IPC: H01L21/20 ,  H01L21/318

CPC classification number: H01L21/7813 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/34 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/872 ,  H01L33/007 ,  H01L33/0079

Abstract: A method for manufacturing a nitride semiconductor device and the nitride semiconductor device manufactured thereby are provided to simplify manufacturing processes, to obtain low defect density from a semiconductor layer and to reduce fabrication costs. An upper structure(B) is formed on a nitride semiconductor defect position controlling substrate(S) by stacking a plurality of nitride semiconductor layers with each other. The substrate includes a defect group region(H) and a low defect region(ZY) enclosed with the defect group region. The upper structure is separated from the substrate. The upper structure is divided into discrete chips.

Abstract translation: 提供了制造氮化物半导体器件的方法和由此制造的氮化物半导体器件，以简化制造工艺，从半导体层获得低缺陷密度并降低制造成本。 通过将多个氮化物半导体层彼此堆叠，在氮化物半导体缺陷位置控制基板（S）上形成上部结构（B）。 衬底包括缺陷组区域（H）和由缺陷组区域包围的低缺陷区域（ZY）。 上部结构与基板分离。 上部结构分为离散芯片。

公开(公告)号：KR1020050053518A

公开(公告)日：2005-06-08

申请号：KR1020040101099

申请日：2004-12-03

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 나가이요우이치 ,  기야마마코토 ,  나카무라다카오 ,  사쿠라다다카시 ,  아키타가츠시 ,  우에마츠고지 ,  이케다아야코 ,  가타야마고지 ,  요시모토스스무

IPC: H01L33/20

CPC classification number: H01L33/02 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/58 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A light emitting device includes a nitride semiconductor substrate (1) with a resistivity of 0.5 ©-cm or less, an n-type nitride semiconductor layer (3) and a p-type nitride semiconductor layer (5) placed more distantly from the nitride semiconductor substrate (1) than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate (1), and a light emitting layer (4) placed between the n-type nitride semiconductor layer (3) and the p-type nitride semiconductor layer (5), wherein one of the nitride semiconductor substrate (1) and the p-type nitride semiconductor layer (5) is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.