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公开(公告)号：KR1020090127035A
公开(公告)日：2009-12-09
申请号：KR1020087027687
申请日：2008-03-19
Applicant: 스미토모덴키고교가부시키가이샤
IPC: H01L29/872 , H01L29/47
CPC classification number: H01L29/872 , H01L29/2003 , H01L29/66143 , H01L29/66204
Abstract: A Schottky barrier diode is provided with an epitaxially grown layer, which is formed on a substrate and has a mesa section, and a Schottky electrode formed on the mesa section. A distance between an end section of the Schottky electrode and an upper surface end section of the mesa section is 2μm or shorter. With a distance (x) of 2μm or shorter, the Schottky barrier diode having a remarkably reduced leak current, an improved breakdown voltage and excellent withstand voltage characteristics is provided.
Abstract translation: 肖特基势垒二极管设置有形成在基板上并具有台面部分的外延生长层和形成在台面部分上的肖特基电极。 肖特基电极的端部与台面部的上表面端部之间的距离为2μm以下。 在距离（x）为2μm或更短的范围内，肖特基势垒二极管具有显着降低的漏电流，提高了击穿电压和优异的耐电压特性。
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公开(公告)号：KR1020050053518A
公开(公告)日：2005-06-08
申请号：KR1020040101099
申请日：2004-12-03
Applicant: 스미토모덴키고교가부시키가이샤
IPC: H01L33/20
CPC classification number: H01L33/02 , H01L33/0075 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/58 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
Abstract: A light emitting device includes a nitride semiconductor substrate (1) with a resistivity of 0.5 ©-cm or less, an n-type nitride semiconductor layer (3) and a p-type nitride semiconductor layer (5) placed more distantly from the nitride semiconductor substrate (1) than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate (1), and a light emitting layer (4) placed between the n-type nitride semiconductor layer (3) and the p-type nitride semiconductor layer (5), wherein one of the nitride semiconductor substrate (1) and the p-type nitride semiconductor layer (5) is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.
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公开(公告)号：KR100919657B1
公开(公告)日：2009-09-30
申请号：KR1020067000253
申请日：2004-08-04
Applicant: 스미토모덴키고교가부시키가이샤
CPC classification number: H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
Abstract: 구조가 간단하기 때문에 제조가 용이하고, 큰 발광 효율을 장기간 안정적으로 얻을 수 있는 발광 장치를 제공하기 위해, 질화물 반도체 기판(1)의 제1 주표면 측에, n형 질화물 반도체층(2)과, 질화물 반도체 기판에서 보아 n형 질화물 반도체층보다 멀리에 위치하는 p형 질화물 반도체층(6)과, n형 질화물 반도체층과 p형 질화물 반도체층(6) 사이에 위치하는 발광층(4)을 구비하고, 질화물 반도체 기판의 비저항이 0.5 Ω·cm 이하이며, p형 질화물 반도체층 측을 다운 실장하여, 질화물 반도체 기판의 제1 주표면과 반대측의 주표면인 제2 주표면(1a)으로부터 빛을 방출한다.
Abstract translation: 为了提供具有简单结构并因此可以容易地制造并且可以长时间稳定地提供高发光效率的发光器件，发光器件包括第一个n型氮化物半导体层（2） 氮化物半导体衬底（1）的主表面侧，与氮化物半导体衬底相比位于第一主表面侧的n型氮化物半导体层更远的p型氮化物半导体层（6）和发光层（ 4）放置在第一主表面侧的n型氮化物半导体层和p型氮化物半导体层（6）之间。 氮化物半导体衬底具有0.5欧姆·厘米或更小的电阻率，并且p型氮化物半导体层侧被下放，使得光从氮化物半导体衬底的第二主表面（1a） 第一主表面。
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公开(公告)号：KR1020070113094A
公开(公告)日：2007-11-28
申请号：KR1020067024397
申请日：2006-03-06
Applicant: 스미토모덴키고교가부시키가이샤
IPC: H01L21/338
CPC classification number: H01L29/7787 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L29/2003
Abstract: Disclosed is a group III nitride semiconductor device wherein leakage current from a Schottky electrode is reduced. In a high-electron-mobility transistor (11), a supporting substrate (13) is specifically composed of AlN, AlGaN and GaN. An AlYGa1-YN epitaxial layer (15) has a full width at half maximum of the (0002) plane XRD of not more than 150 sec. A GaN epitaxial layer (17) is formed between the gallium nitride supporting substrate and the AlYGa1-YN epitaxial layer (0
Abstract translation: 公开了一种III族氮化物半导体器件，其中来自肖特基电极的漏电流减小。 在高电子迁移率晶体管（11）中，支撑衬底（13）特别地由AlN，AlGaN和GaN构成。 AlYGa1-YN外延层（15）的（0002）面XRD的半峰全宽不超过150秒。 在氮化镓支撑衬底和AlYGa1-YN外延层（0
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公开(公告)号：KR1020070013287A
公开(公告)日：2007-01-30
申请号：KR1020067022342
申请日：2005-05-13
Applicant: 스미토모덴키고교가부시키가이샤
IPC: H01L33/30
CPC classification number: H01L33/007 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02645 , H01L33/0075 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12032 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
Abstract: A III nitride semiconductor crystal having sizes of approximately a semiconductor device and a manufacturing method thereof, a III nitride semiconductor device and a manufacturing method thereof and a light emitting device. The method for manufacturing the III nitride semiconductor crystal includes a process of growing one or more of a III nitride semiconductor crystalline board (11) on a base board (1), a process of growing one layer or more layers of a III nitride semiconductor crystalline layer (12) on the III nitride semiconductor crystalline board (11), and a process of separating a III nitride semiconductor crystal (10) composed of the III nitride semiconductor crystalline board (11) and the III nitride semiconductor crystalline layer (12) from the base board (1). The III nitride semiconductor crystal (10) has a thickness of 10mum or more but not more than 600mum, and a width of 0.2mm or more but not more than 50mm. ® KIPO & WIPO 2007
Abstract translation: 具有大致半导体器件的尺寸的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器件。 制造III族氮化物半导体晶体的方法包括在基板（1）上生长III族氮化物半导体晶体板（11）中的一种或多种的工艺，生长一层或更多层III族氮化物半导体晶体 （11）的III族氮化物半导体晶体层（11）和III族氮化物半导体结晶层（11）的III族氮化物半导体晶体（10）的分离工序， 基板（1）。 III族氮化物半导体晶体（10）的厚度为10μm以上且不大于600μm，宽度为0.2mm以上且50mm以下。 ®KIPO＆WIPO 2007
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Patent Agency Ranking
公开(公告)号：KR1020120114403A
公开(公告)日：2012-10-16
申请号：KR1020127023480
申请日：2012-01-19
Applicant: 스미토모덴키고교가부시키가이샤
IPC: H01L33/32
CPC classification number: H01L33/007 , H01L33/0079 , H01L33/025
Abstract: 본 반도체 디바이스(5)는 지지 기판(60)과, 지지 기판(60) 상에 배치된 도전층(50)과, 도전층(50) 상에 배치된 적어도 1층의 III족 질화물 반도체층(200)을 포함하고, III족 질화물 반도체층(200) 중 도전층(50)에 인접하는 도전층 인접 III족 질화물 반도체층(200c)은 n형 도전성을 가지며, 전위 밀도가 1×10
7 ㎝
-2 이하이고, 산소 농도가 5×10
18 ㎝
-3 이하이다. 이에 따라, 결정성이 높은 반도체층을 갖는 n-down형의 반도체 디바이스가 제공된다.-
7.发明公开
公开(公告)号：KR1020090042164A
公开(公告)日：2009-04-29
申请号：KR1020080102984
申请日：2008-10-21
Applicant: 스미토모덴키고교가부시키가이샤
IPC: H01L21/20 , H01L21/335 , H01L29/768 , H01L29/772
CPC classification number: C30B25/04 , B82Y10/00 , C30B29/406 , H01L21/02395 , H01L21/02436 , H01L21/0254 , H01L21/02581 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/2003 , H01L29/66469 , H01L29/7786
Abstract: A semi-insulating nitride semiconductor substrate, a manufacturing method thereof, a nitride epitaxial substrate, and a field effect transistor are provided to prevent a mixing of oxygen and to grow a uniform crystal by maintaining a growing temperature into a high temperature. A mask is formed on a base substrate. In the mask, a cover part of a dot type or a stripe type having a diameter or a width of 10~100um is arranged with an interval of 250~2000um. A nitride semiconductor crystal is grown on the base substrate by supplying a gas containing a group 3 raw material gas, a group 5 raw material gas, and iron by an HVPE(Hydride Vapor Phase Epitaxy) method with a temperature 1040~1150°C. The base substrate is removed. A crystal surface except for the cover part is flattened in a temperature of 1090~1150°C.
Abstract translation: 提供半绝缘氮化物半导体衬底，其制造方法，氮化物外延衬底和场效应晶体管，以通过将生长温度保持在高温来防止氧的混合并生长均匀的晶体。 在基底基板上形成掩模。 在面罩中，以直径或宽度为10〜100um的点状或条状的覆盖部分间隔250〜2000um。 通过在1040〜1150℃的温度下通过HVPE（氢化物气相外延）法提供含有3族原料气体，5族原料气体和铁的气体，在基底基板上生长氮化物半导体晶体。 去除基底衬底。 除了盖部分之外的晶体表面在1090〜1150℃的温度下变平。
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公开(公告)号：KR1020060059955A
公开(公告)日：2006-06-02
申请号：KR1020067000253
申请日：2004-08-04
Applicant: 스미토모덴키고교가부시키가이샤
CPC classification number: H01L33/32 , H01L33/20 , H01L33/382 , H01L33/505 , H01L33/507 , H01L33/58 , H01L2224/05573 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/3025 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2224/05599 , H01L2924/00011 , H01L2224/45099
Abstract: A light-emitting device is disclosed which can be produced easily because of its simple structure and is capable of stably maintaining high luminous efficiency for a long time. The light-emitting device comprises, on the side of a first major surface of a nitride semiconductor substrate (1), an n-type nitride semiconductor layer (2), a p-type nitride semiconductor layer (6) placed farther than the n-type nitride semiconductor layer (2) from the nitride semiconductor substrate (1), and a light-emitting layer (4) arranged between the n-type nitride semiconductor layer (2) and the p-type nitride semiconductor layer (6). The nitride semiconductor substrate has a resistivity of not more than 0.5 Omega.cm. The light-emitting device is mounted with the p- type nitride semiconductor layer side down, so that light is emitted through a second major surface (1a) of the nitride semiconductor substrate which is opposite to the first major surface.
Abstract translation: 公开了一种由于其结构简单而能容易地制造并且能够长时间稳定地保持高发光效率的发光器件。 发光器件在氮化物半导体衬底（1）的第一主表面上包括n型氮化物半导体层（2），比n更远的p型氮化物半导体层（6） 氮化物半导体衬底（1）的氮化物半导体层（2）和配置在n型氮化物半导体层（2）和p型氮化物半导体层（6）之间的发光层（4）。 氮化物半导体衬底的电阻率不大于0.5Ω·cm。 发光装置以p-型氮化物半导体层一侧向下安装，使得光通过与第一主表面相对的氮化物半导体衬底的第二主表面（1a）发射。
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公开(公告)号：KR100955634B1
公开(公告)日：2010-05-03
申请号：KR1020040101099
申请日：2004-12-03
Applicant: 스미토모덴키고교가부시키가이샤
IPC: H01L33/20
CPC classification number: H01L33/02 , H01L33/0075 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/58 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
Abstract: 비저항 0.5 Ω·cm 이하의 질화물 반도체 기판(1)과, 질화물 반도체 기판의 제1 주표면 측에, n형 질화물 반도체층(3)과, 질화물 반도체 기판에서 보아 n형 질화물 반도체층(3)보다 멀리에 위치하는 p형 질화물 반도체층(5)과, n형 질화물 반도체층(3)과 p형 질화물 반도체층(5) 사이에 위치하는 발광층(4)을 구비하며, 질화물 반도체 기판(1) 및 p형 질화물 반도체층(5) 중 어느 한 쪽을 빛을 방출하는 톱 측에, 또 다른 쪽을 다운 측에 실장하고, 그 톱 측에 위치하는 전극이 하나로 구성된다. 이에 따라, 소형화가 가능하고, 또한 구조가 간단하기 때문에 제조가 용이하며, 큰 발광 효율을 장기간 안정적으로 얻을 수 있는 발광 소자를 얻을 수 있다.
Abstract translation: 一种发光器件，包括电阻率为0.5Ω·cm或更小的氮化物半导体衬底（1），n型氮化物半导体层（3）和p型氮化物半导体层（5），所述p型氮化物半导体层 在所述氮化物半导体衬底（1）的第一主表面侧处具有比所述n型氮化物半导体层（1）更高的氮化物半导体衬底（1），以及位于所述n型氮化物半导体层（3）和 所述p型氮化物半导体层（5），其中所述氮化物半导体衬底（1）和所述p型氮化物半导体层（5）中的一个安装在发射光的顶侧，而另一个位于所述衬底的下侧 ，并将单个电极放置在顶侧。 因此，提供了一种发光装置，其具有简单的构造，从而使其易于制造，可以提供长时间的高发光效率，并且可以容易地小型化。
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10.发明公开고전자 이동도 트랜지스터, 전계 효과 트랜지스터,에피택셜 기판, 에피택셜 기판을 제작하는 방법 및ＩＩＩ족 질화물계 트랜지스터를 제작하는 방법 无效高电子移动性晶体管，场效应晶体管，外延基板，制造外延基板的方法和制造III族氮化物晶体管的方法
公开(公告)号：KR1020080011264A
公开(公告)日：2008-02-01
申请号：KR1020067027121
申请日：2006-03-03
Applicant: 스미토모덴키고교가부시키가이샤
CPC classification number: H01L29/7787 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L29/2003 , H01L29/66462
Abstract: Disclosed is a high-electron-mobility transistor having a high-purity channel layer and a high-resistance buffer layer. Specifically disclosed is a high-electron-mobility transistor (11) comprising a supporting base (13) composed of a gallium nitride, a buffer layer (15) composed of a first gallium nitride semiconductor, a channel layer (17) composed of a second gallium nitride semiconductor, a semiconductor layer (19) composed of a third gallium nitride semiconductor, and an electrode structure (a gate electrode (21), a source electrode (23) and a drain electrode (25)) for the transistor (11). The band gap of the third gallium nitride semiconductor is larger than that of the second gallium nitride semiconductor. The carbon concentration Nc1 in the first gallium nitride semiconductor is not less than 4 X 10^17 cm-3, and the carbon concentration Nc2 in the second gallium nitride semiconductor is less than 4 X 10^16 cm-3.
Abstract translation: 公开了具有高纯度沟道层和高电阻缓冲层的高电子迁移率晶体管。 具体公开了一种高电子迁移率晶体管（11），包括由氮化镓构成的支撑基底（13），由第一氮化镓半导体构成的缓冲层（15），由第二氮化镓构成的沟道层（17） 氮化镓半导体，由第三氮化镓半导体构成的半导体层（19）和用于晶体管（11）的电极结构（栅电极（21），源电极（23）和漏电极（25））， 。 第三氮化镓半导体的带隙大于第二氮化镓半导体的带隙。 第一氮化镓半导体中的碳浓度Nc1为4×10 ^ 17cm -3以上，第二氮化镓半导体中的碳浓度Nc2小于4×10 ^ 16cm-3。
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