-
公开(公告)号：KR100928730B1
公开(公告)日：2009-11-27
申请号：KR1020070083492
申请日：2007-08-20
Applicant: 전자부품연구원
IPC: C03C17/30
Abstract: 본 발명은 폴리실라잔을 기판에 코팅한 후 경화반응에 의해 실리카 유리막을 형성하는 방법을 이용하는 것으로서, 특히 경화반응을 진행함에 있어서 상온에서 실행하되, 고온 경화의 효과를 얻을 수 있는 유리막 형성 방법에 관한 것으로 폴리실라잔의 경화 방법에 상압 플라즈마 경화 또는 가압 가습 경화 또는 스팀 경화를 적용한다.
실리카 코팅, 폴리실라잔, 경화, 플라즈마Abstract translation: 使用聚硅氮烷钝化表面的二氧化硅玻璃膜形成方法被设置为当在室温下固化时不会因杂质而变形并且形成具有高密度的玻璃膜。 用于钝化表面的玻璃膜形成方法包括以下步骤：将聚硅氮烷涂覆在基板上; 并通过使用大气压等离子体工艺来固化聚硅氮烷。 固化步骤的处理时间为10-20分钟。 固化步骤的加工温度为50〜120℃。 大气压等离子体处理的处理气体是氩气和氧气。
-
公开(公告)号：KR100307756B1
公开(公告)日：2001-11-02
申请号：KR1019990041939
申请日：1999-09-30
Applicant: 전자부품연구원
IPC: G01R29/08
CPC classification number: G01R29/0878
Abstract: 본발명은밀리미터파대역이상의전자기파를검출하기위한검출장치의감지센서를개시한다. 본발명은기판상에열전쌍으로이용할수 있는서로다른이종금속중 어느하나의금속물질로다이폴안테나를형성하고, 다이폴안테나의급전부에나머지금속으로전기적저항체를형성하되안테나의입력임피던스와같도록한다. 두금속이만나는접점중 한접점은안테나를형성한금속이연장되고다른접점에서는저항체를형성한금속이연장되어열전쌍온도센서가형성되는것을특징으로한다. 본발명에따르면, 밀리미터파대역이상의전자기파를검출할수 있으면서도제작이용이한새로운방식즉, 열전쌍(thermo-couple)과안테나소자를조합한전자기파검출장치의감지센서와 CMOS 구동소자의제조공정을동시에수행할수 있어공정이단축되는효과를얻을수 있다.
-
公开(公告)号：KR1020010029228A
公开(公告)日：2001-04-06
申请号：KR1019990041939
申请日：1999-09-30
Applicant: 전자부품연구원
IPC: G01R29/08
CPC classification number: G01R29/0878
Abstract: PURPOSE: A sensor of an electromagnet wave detecting device is provided to detect an electromagnetic wave over a millimeter wave band by joining a thermo-couple and an antenna device. CONSTITUTION: An electromagnetic wave detecting device includes a sensor which is arranged with a matrix structure as to detect an electromagnetic wave image over a millimeter wave band. A dipole antenna(10) is formed with any one metal material among the different heterogeneous metals(11a,11b) using as a thermo-couple on a substrate. A feeder resistor part(12) is formed with the different heterogeneous metal from that of the dipole antenna. The resistor part formed with the different metal material from the metal material forming the dipole antenna among the different heterogeneous metals is extended to form a thermo-couple with the dipole antenna.
Abstract translation: 目的：提供电磁波检测装置的传感器，通过连接热电偶和天线装置来检测毫米波段上的电磁波。 构成：电磁波检测装置包括传感器，该传感器具有矩阵结构，以便检测毫米波段上的电磁波图像。 偶极天线（10）在不同的非均质金属（11a，11b）中使用在基板上作为热电偶的任何一种金属材料形成。 馈电电阻器部分（12）形成有与偶极子天线不同的异质金属。 由形成偶极天线的不同金属材料形成的不同金属材料的电阻部分在不同的非均质金属之间扩展，以形成与偶极子天线的热电偶。
-
公开(公告)号：KR1020010010469A
公开(公告)日：2001-02-15
申请号：KR1019990029367
申请日：1999-07-20
Applicant: 전자부품연구원
IPC: H01L21/306
Abstract: PURPOSE: A method of manufacturing a silicon membrane is to measure only a change of a reflecting light due to removal of a reflecting film, therefor obtaining a uniform thickness of the silicon membrane independent of a temperature of an etching solution. CONSTITUTION: A method of manufacturing a silicon membrane comprises the steps of: forming at least one of an etching area by etching a portion of the first surface of a silicon substrate(100); depositing a reflecting film on the etching area; forming a protecting film(300) on the first surface and the second surface opposite to the first surface; forming the first opening as a measuring area and the second opening as an active area by etching the portion of the protecting film on the second surface; and etching the measuring area and the active area using the remaining protecting film as an etching mask until all of the metal film is etched.
Abstract translation: 目的：制造硅膜的方法是仅测量由于去除反射膜而导致的反射光的变化，从而获得与膜的温度无关的硅膜的均匀厚度。 构成：制造硅膜的方法包括以下步骤：通过蚀刻硅衬底（100）的第一表面的一部分来形成蚀刻区域中的至少一个; 在蚀刻区域上沉积反射膜; 在与第一表面相对的第一表面和第二表面上形成保护膜（300）; 通过蚀刻第二表面上的保护膜的部分，形成作为测量区域的第一开口和第二开口作为有源区域; 并使用剩余的保护膜作为蚀刻掩模蚀刻测量区域和有源区域，直到蚀刻所有金属膜。
-
-
-
Search Results
24
records
(took 0.019 seconds)
