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公开(公告)号：KR101867568B1
公开(公告)日：2018-06-14
申请号：KR1020160132318
申请日：2016-10-12
Applicant: 한국광기술원
Abstract: 본발명은이미지센서자동화이트밸런스기반공간색온도추정시스템에관한것으로서, 영상을촬상하는이미지센서와, 이미지센서에서출력되는영상정보를 Ycbcr 색공간정보로변환하는색공간변환부와, 색공간변환부에의해변환된 Ycbcr색공간정보에대해화이트밸런스를조정하기위한컬러이득을산출하고, 산출된컬러이득에따라화이트밸런스를조정하는화이트밸런스조정부와, 광원의거리및 조도값을입력할수 있도록된 입력부와, 광원의거리및 조도값과컬러이득에대응되는색온도가기록된룩업테이블과, 입력부에입력된광원의거리및 조도값과화이트밸런스조정부에서적용한컬러이득에대응되는색온도값을룩업테이블에기록된정보를이용하여산출하는색온도검출부를구비한다. 이러한이미지센서자동화이트밸런스기반공간색온도추정시스템에의하면, 화이트밸런스처리를위해적용한컬러이득정보에대응되어미리실험에의해구해져룩업테이블에기록된정보를이용하여색온도를산출할수 있어색온도검출오차를감소할수 있는장점을제공한다.
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公开(公告)号：KR101618244B1
公开(公告)日：2016-05-09
申请号：KR1020140193853
申请日：2014-12-30
Applicant: 한국광기술원
IPC: H01L33/50
CPC classification number: H01L33/50
Abstract: 본발명은 3D 프린팅방법을이용하여형광체의두께및 색좌표의균일성을개선할수 있는백색발광다이오드의제조방법에관한것으로, 형광체와가시광영역에서광투과율이높은레진재료로이루어진필라멘트를이용한 3D 프린팅에의해 LED 칩상부의적어도일부를코팅하는것을특징으로한다.
Abstract translation: 本发明涉及通过使用3D打印方法能够提高荧光体的厚度均匀性和色坐标的白色发光二极管的制造方法。 根据本发明，通过利用由荧光体和可见光区域中的具有高透光率的树脂材料构成的细丝的3D打印方法来涂覆LED芯片的上部的至少一部分。
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公开(公告)号：KR101480537B1
公开(公告)日：2015-01-09
申请号：KR1020130109966
申请日：2013-09-12
Applicant: 한국광기술원
CPC classification number: H01L33/62 , H01L27/156 , H01L33/20 , H01L33/382
Abstract: 본 발명의 일 실시예는 복수 개의 발광 다이오드 셀 및 상기 복수 개의 발광 다이오드 셀 중 서로 인접한 발광 다이오드 셀을 전기적으로 연결하는 도전성 브릿지를 포함하고, 상기 복수 개의 발광 다이오드 셀의 각각은, 제1 질화물계 반도체층, 상기 제1 질화물계 반도체층의 상부에 배치되는 제2 질화물계 반도체층 및 상기 제1 질화물계 반도체층과 제2 질화물계 반도체층 사이에 배치되는 활성층을 구비하는 구조물, 상기 구조물의 하부로부터 연장되어 상기 제2 질화물계 반도체층과 접촉하고, 상기 제1 질화물계 반도체층 및 활성층과 절연되는 제2 도전성 콘택부 및 상기 제1 질화물계 반도체층과 접하고, 상기 제2 도전성 콘택부와 이격되도록 형성된 제1 도전성 콘택부를 포함하는 발광 다이오드 장치를 개시한다.
Abstract translation: 本发明的一个实施例包括多个发光二极管单元，以及将发光二极管单元之间相邻的发光二极管单元电连接的导电桥。 每个发光二极管单元包括包括第一氮化物半导体层，布置在第一氮化物半导体层的上部的第二氮化物半导体层和布置在第一氮化物半导体层和第二氮化物半导体层之间的有源层的结构; 第二导电接触部分，其从结构的下部延伸并接触第二氮化物半导体层，并与第一氮化物半导体层和有源层绝缘; 以及与第一氮化物半导体层接触并与第二导电接触部分分离的第一导电接触部。
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公开(公告)号：KR1020140079115A
公开(公告)日：2014-06-26
申请号：KR1020120148729
申请日：2012-12-18
Applicant: 한국광기술원
CPC classification number: H01L33/50 , H01L33/04 , H01L33/486 , H01L33/52
Abstract: The present invention relates to a light emitting device and a manufacturing method thereof. The light emitting device comprises: a PCB substrate on which an electrode connection part is formed; an LED chip of which an electrode formation surface is arranged toward the PCB substrate; and a fluorescent body layer formed on a substrate of the LED chip. According to the present invention, a space, needed for mounting the LED chip on the PCB substrate on which the electrode connection part is formed, is small. Therefore, a package can: have a large capacity; be miniaturized; and reduce the power consumption.
Abstract translation: 发明装置及其制造方法技术领域本发明涉及发光装置及其制造方法。 发光器件包括：PCB基板，其上形成有电极连接部分; 将其电极形成面朝向PCB基板配置的LED芯片; 以及形成在所述LED芯片的基板上的荧光体层。 根据本发明，在形成有电极连接部的PCB基板上安装LED芯片所需的空间很小。 因此，包装可以：具有大容量; 小型化; 并降低功耗。
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公开(公告)号：KR1020140034348A
公开(公告)日：2014-03-20
申请号：KR1020120096785
申请日：2012-08-31
Applicant: 한국광기술원
IPC: H01L33/36
CPC classification number: H01L33/405 , H01L33/32 , H01L33/42 , H01L2933/0008
Abstract: The present invention is to disclose a light emitting diode and a method of manufacturing the same, which comprise: a reflection electrode layer; a lamination formed on the reflection electrode layer and having an n-type III-nitride group semiconductor layer, a p-type III-nitride group semiconductor layer, and an activating layer formed between the n-type III-nitride group semiconductor layer and the p-type III-nitride group semiconductor layer; a translucent conductive substrate formed on the lamination and having zinc oxide (ZnO); and a pad portion formed on the opposite side of the surface facing the lamination among the transparent conductive substrate, wherein the angle of adjacent sides among a plurality of sides of the lamination is less than 90 degrees or more than 90 degrees.
Abstract translation: 本发明公开了一种发光二极管及其制造方法，它包括：反射电极层; 形成在反射电极层上并具有n型III族氮化物半导体层，p型III族氮化物半导体层和在n型III族氮化物半导体层和 p型III族氮化物半导体层; 形成在层叠上并具有氧化锌（ZnO）的半透明导电基板; 以及形成在所述透明导电性基板的面对所述层叠体的面的相对侧的垫部，所述层叠体的多个侧面中的相邻侧的角度小于90度以上且90度以下。
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Patent Agency Ranking
公开(公告)号：KR1020130074208A
公开(公告)日：2013-07-04
申请号：KR1020110142140
申请日：2011-12-26
Applicant: 한국광기술원
Abstract: PURPOSE: A light emitting diode is provided to prevent the generation of the leakage current of a semiconductor device by combining the metal of a p-type electrode layer with the metal of an n-type electrode layer. CONSTITUTION: An etch stop layer (30) is formed in the outer surface of a semiconductor layer. A first metal layer (40) is formed in the front upper part of a reflection layer and a part of the etch stop layer. A second metal layer (90) is contacted with the first metal layer. An insulating protection layer (50) covers the front upper surface of the first metal layer and the inner surface of a via hole. An electrode (60) is formed in the front upper surface the insulating protection layer.
Abstract translation: 目的：提供一种发光二极管，以通过将p型电极层的金属与n型电极层的金属组合来防止半导体器件的漏电流的产生。 构成：在半导体层的外表面中形成蚀刻停止层（30）。 第一金属层（40）形成在反射层的前上部和蚀刻停止层的一部分中。 第二金属层（90）与第一金属层接触。 绝缘保护层（50）覆盖第一金属层的前上表面和通孔的内表面。 在绝缘保护层的前上表面形成有电极（60）。
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公开(公告)号：KR1020130053990A
公开(公告)日：2013-05-24
申请号：KR1020110119744
申请日：2011-11-16
Applicant: 한국광기술원
CPC classification number: H01L33/382 , H01L33/22 , H01L2933/0016
Abstract: PURPOSE: A light emitting diode and a manufacturing method thereof are provided to improve performance by using a ceramic substrate including at least one substrate via hole. CONSTITUTION: At least one inner via hole is formed at in an n-type semiconductor layer(110) and an active layer. The via hole is formed in a p-type semiconductor layer(130) and a reflection layer(140). An electrode is formed in the via hole. A first electrode pad is connected to the electrode. A ceramic substrate electrically connects at least one substrate via hole. A second electrode pad is formed in the front surface or a part of the ceramic substrate.
Abstract translation: 目的：提供发光二极管及其制造方法，以通过使用包括至少一个衬底通孔的陶瓷衬底来提高性能。 构成：在n型半导体层（110）和有源层中形成至少一个内部通孔。 通孔形成在p型半导体层（130）和反射层（140）中。 在通孔中形成电极。 第一电极焊盘连接到电极。 陶瓷基板电连接至少一个基板通孔。 第二电极焊盘形成在陶瓷衬底的前表面或部分中。
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公开(公告)号：KR1020120135821A
公开(公告)日：2012-12-17
申请号：KR1020110054749
申请日：2011-06-07
Applicant: 한국광기술원
CPC classification number: H01L33/58 , H01L33/0008 , H01L33/06 , H01L2924/12041
Abstract: PURPOSE: A light emitting diode and a manufacturing method thereof are provided to reduce internal reflection of light by including an anti-reflective structure having a cycle smaller than a multi-layer and a light emitting wavelength. CONSTITUTION: A barrier layer is formed on the upper end of a bottom contact layer. An active layer(120) has single and multiple quantum well structures. A top contact layer(130) is formed on the upper end of the active layer. A multi-layer(133) has a thickness smaller than a light emitting wavelength at an external part of the top contact layer and the bottom contact layer. The size of an anti-reflective structure is smaller than the light emitting wavelength of a light emitting diode.
Abstract translation: 目的：提供一种发光二极管及其制造方法，以通过包括具有小于多层和发光波长的周期的抗反射结构来减少光的内反射。 构成：在底部接触层的上端形成阻挡层。 有源层（120）具有单个和多个量子阱结构。 顶层接触层（130）形成在有源层的上端。 多层（133）的厚度小于顶部接触层和底部接触层的外部的发光波长。 抗反射结构的尺寸小于发光二极管的发光波长。
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公开(公告)号：KR1020120127843A
公开(公告)日：2012-11-26
申请号：KR1020110045588
申请日：2011-05-16
Applicant: 한국광기술원
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/20 , H01L33/26 , H01L2924/12041
Abstract: PURPOSE: A method for manufacturing an active layer of a light emitting diode and the light emitting diode having a broad emission spectrum are provided to a wide wavelength region of an emission spectrum by including the active layer of a single or multiple quantum well which includes a quantum well layer formed into a dot shape. CONSTITUTION: A quantum barrier layer is formed on an upper portion of n n-type clad layer. A quantum well layer of a dot type is formed on the upper portion of the quantum barrier layers. The quantum barrier layer is formed on the upper portion of the quantum well layer. The quantum well layer is formed with a GaxIn1-xP(0
Abstract translation: 目的：通过包括单个或多个量子阱的有源层，将发光二极管的有源层和具有宽发射光谱的发光二极管的方法提供给发射光谱的宽波长区域，该有源层包括 量子阱层形成点状。 构成：在n n型覆盖层的上部形成有量子势垒层。 在量子势垒层的上部形成有点状的量子阱层。 量子势垒层形成在量子阱层的上部。 量子阱层由GaxIn1-xP（0 <= x <= 1）层形成。 量子阱层的压缩应变具有0.5％至3.0％的范围。
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