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21.发明授权양자점 무질서화 기술에서 유전체 덮개층 조합에 의한ＩｎＧａＡｓ/ＧａＡｓ 양자점 에너지 밴드갭 조정 방법 失效通过介电吸收层在量子阱中的组合控制InGaAs / GaAs量子能量束带的方法
公开(公告)号：KR100502884B1
公开(公告)日：2005-07-25
申请号：KR1020010088867
申请日：2001-12-31
Applicant: 한국과학기술연구원
IPC: H01L29/15
Abstract: 본 발명은 InGaAs/GaAs 양자점 에너지 밴드갭을 조정하는 방법에 관한 것으로서, InGaAs/GaAs 양자점 기판을 성장하는 단계와, InGaAs/GaAs 양자점 기판에 2중 유전체 덮개층을 성장하는 단계와, 2중 유전체 덮개층이 성장된 InGaAs/GaAs 양자점 기판을 열처리하는 단계를 포함하는 InGaAs/GaAs 양자점 에너지 밴드갭 조정 방법을 제공한다. InGaAs/GaAs 양자점 기판에 유전체 덮개층으로 SiN
x 와 SiO
2 를 성장하고, 700℃에서 1 내지 4분간 열처리한 결과, InGaAs/GaAs 양자점 기판에 국부적으로 다른 에너지 밴드갭이 형성되었고 공정 조건에 의존하여 에너지 밴드갭의 이동량이 변화하는 것을 관찰하며, 이와 함께 반치폭 값의 감소 현상과 스펙트럼 강도의 증가 현상을 관찰한다.-
公开(公告)号：KR1020050041121A
公开(公告)日：2005-05-04
申请号：KR1020030076161
申请日：2003-10-30
Applicant: 한국과학기술연구원
IPC: H01S5/34
CPC classification number: B82Y20/00 , H01S5/0654 , H01S5/1014 , H01S5/1017 , H01S5/1064 , H01S5/125 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/3406 , H01S5/3434 , H01S5/34373 , H01S2304/04
Abstract: 본 발명은 스트레인 보상 다층양자우물을 이용하는 단일모드형 레이저 다이오드 및 그 제조 방법에 관한 것으로서, 다수의 압축 스트레인 우물층과 다수의 긴장 스트레인 장벽층으로 이루어진 스트레인 보상 다층양자우물을 갖는 에피 구조를 이용함으로써, 다층양자우물에서의 오제 재결합 발생 확률을 감소시키고, 다층양자우물의 온도 안정성을 더욱 향상시켜 양자 효율을 증가시키며, 최대 광출력 및 단일모드 광출력을 증가시킬 수 있는 단일모드형 레이저 다이오드 및 그 제조 방법을 제공한다.
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公开(公告)号：KR100399555B1
公开(公告)日：2003-09-26
申请号：KR1020000064252
申请日：2000-10-31
Applicant: 한국과학기술연구원
IPC: G11B5/10
Abstract: PURPOSE: A junction glass for magnetic heads is provided to have a thermal expansion coefficient similar to ferrite and to have a junction temperature under 600 °C. And the junction glass is provided to have an excellent water resistance and an abrasion resistance, and to prevent the encroachment of a thin film or the generation of foam upon heat treatment. CONSTITUTION: A junction glass has a low fusion point that is used for uniting or fixing a magnetic head at a temperature under 600 °C. The junction glass for magnetic heads is used to unite or fix an MIG(Metal In Gap) type magnetic head, in which a FeN type metal magnetic thin film is formed in a gap of a pair of ferrite cores. And the junction glass for magnetic heads consists of, in percentage, PbO 45-80 %, SiO2 5-25%, B,.2 O3 0-10%. Bi2 O3 0-20%, Al2 O3 0-10%, .ZnO 0-10%, Fe2 O3 0-5%, Sb2 O3 0-2%, and Na2 O and K2 O 0-10%.
Abstract translation: 目的：提供一种用于磁头的结合玻璃，其热膨胀系数与铁氧体相似，结温低于600℃。 而且，中继玻璃具有优异的耐水性和耐磨损性，并且可以防止热处理时薄膜的侵入或泡沫的产生。 组成：中继玻璃具有低熔点，用于在低于600℃的温度下结合或固定磁头。 用于磁头的接合玻璃用于合并或固定MIG（金属间隙）型磁头，其中在一对铁氧体磁心的间隙中形成FeN型金属磁性薄膜。 用于磁头的接合玻璃由百分比为PbO 45-80％，SiO2 5-25％，B2O3.0-10％组成。 Bi 2 O 3 0-20％，Al 2 O 3 0-10％，.ZnO 0-10％，Fe 2 O 3 0-5％，Sb 2 O 3 0-2％，Na 2 O和K 2 O 0-10％。
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24.发明公开
公开(公告)号：KR1020030058419A
公开(公告)日：2003-07-07
申请号：KR1020010088868
申请日：2001-12-31
Applicant: 한국과학기술연구원
IPC: H01S5/30
Abstract: PURPOSE: A method is provided which increase light output of a laser diode using a heavily doped p-InP insertion layer in an InP-based laser diode technique. CONSTITUTION: According to the method for forming an InGaAsP/InGaAs laser diode structure based on InP, a heavily doped p-InP layer is inserted, and the above p-InP layer is adjacent to a quantum well. The heavily doped p-InP layer is used in a ridge type laser diode, a large area laser diode, a taper type laser diode and a superluminescent laser diode. While inserting the heavily doped p-InP layer, Be and Zn are used as a p-doping impurity.
Abstract translation: 目的：提供一种使用InP基激光二极管技术中使用重掺杂p-InP插入层增加激光二极管的光输出的方法。 构成：根据用于形成基于InP的InGaAsP / InGaAs激光二极管结构的方法，插入重掺杂的p-InP层，并且上述p-InP层与量子阱相邻。 重掺杂的p-InP层用于脊型激光二极管，大面积激光二极管，锥形激光二极管和超发光激光二极管。 当插入重掺杂的p-InP层时，使用Be和Zn作为p掺杂杂质。
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25.发明公开양자점 무질서화 기술에서 유전체 덮개층 조합에 의한ＩｎＧａＡｓ/ＧａＡｓ 양자점 에너지 밴드갭 조정 방법 失效通过在量子散乱法中组合电介质覆盖层来控制INGAAS / GAAS量子能量带隙的方法
公开(公告)号：KR1020030058418A
公开(公告)日：2003-07-07
申请号：KR1020010088867
申请日：2001-12-31
Applicant: 한국과학기술연구원
IPC: H01L29/15
Abstract: PURPOSE: A method for controlling an energy band gap of InGaAs/GaAs quantum dot by combination of a dielectric capping layer in a quantum dot disorder method is provided to form different band gap regions on the same InGaAs/GaAs quantum dot substrate by coating a dielectric capping layer on a quantum dot structure and performing a thermal process. CONSTITUTION: A method for controlling an energy band gap of InGaAs/GaAs quantum dot by using a dielectric capping layer includes a dielectric combination formation process and an energy band gap formation process. The dielectric combination formation process is to form a dielectric combination on a quantum dot substrate by using SiNx and SiO2 as the dielectric capping layer. The quantum dot substrate having a different energy band gap is formed by performing a thermal process for the quantum dot substrate.
Abstract translation: 目的：提供一种通过量子点无序方法中的介电覆盖层的组合来控制InGaAs / GaAs量子点的能带隙的方法，通过涂覆电介质在同一InGaAs / GaAs量子点基板上形成不同的带隙区域 覆盖在量子点结构上并进行热处理。 构成：通过使用介电覆盖层来控制InGaAs / GaAs量子点的能带隙的方法包括电介质组合形成工艺和能带隙形成工艺。 电介质组合形成工艺是通过使用SiN x和SiO 2作为电介质覆盖层在量子点衬底上形成电介质组合。 通过对量子点基板进行热处理，形成具有不同能带隙的量子点基板。
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Patent Agency Ranking
公开(公告)号：KR1020020039579A
公开(公告)日：2002-05-27
申请号：KR1020000069529
申请日：2000-11-22
Applicant: 한국과학기술연구원
IPC: G11B5/127
Abstract: PURPOSE: A junction glass for fixing a magnetic head is provided to have a thermal expansion coefficient similar to ferrite, to have a junction temperature lower than a softening point of a gap junction glass, and to prevent the generation of recrystallization upon heat treatment. CONSTITUTION: Two ferrite cores are coupled with a gap junction glass, to form a magnetic head core(1). The magnetic head core is inserted in a core inserting groove of a slider(3). A junction glass(4) for fixing the magnetic head has a heat treatment temperature lower than a softening point of the gap junction glass, and is loaded on the magnetic head core. The junction glass for fixing the magnetic head is fused and injected to a gap of the core inserting groove, to couple the magnetic head core to the core inserting groove. The junction glass for fixing the magnetic head consists of, in percentage, PbO 60-80%, SiO2 5-20%, B2 O3 2-10%. Al2 O3 0-5%, ZnO 0-5%, Fe2 O3 0-5%, CuO 0-5%, TeO2 2-15%, and Bi2 O3 2-15%.
Abstract translation: 目的：提供一种用于固定磁头的接合玻璃以具有与铁素体相似的热膨胀系数，以使结温低于间隙接合玻璃的软化点，并且防止在热处理时产生再结晶。 构成：两个铁氧体磁芯与间隙接合玻璃耦合，形成一个磁头磁芯（1）。 磁头芯插入滑块（3）的芯插入槽中。 用于固定磁头的接合玻璃（4）的热处理温度低于间隙接合玻璃的软化点，并被装载在磁头芯上。 用于固定磁头的接合玻璃被熔化并注入到芯插入槽的间隙中，以将磁头芯连接到芯插入槽。 用于固定磁头的接合玻璃由PbO 60-80％，SiO 2 5-20％，B 2 O 3 2-10％的百分比组成。 Al 2 O 3 0-5％，ZnO 0-5％，Fe 2 O 3 0-5％，CuO 0-5％，TeO 2-15％，Bi 2 O 3 2-15％。
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公开(公告)号：KR1020020022214A
公开(公告)日：2002-03-27
申请号：KR1020000054894
申请日：2000-09-19
Applicant: 한국과학기술연구원
CPC classification number: C04B35/46 , C04B35/48 , C04B2111/00844 , C04B2111/90 , C04B2235/3232 , C04B2235/3244 , H01B3/12 , H01G4/1218 , H01G4/1236
Abstract: PURPOSE: Provided is a PbO-ZrO2-CaO-TiO2 system dielectric ceramic composition with high dielectric constant(more than 100) for microwave products of small size and light weight such as filters, duplexer and resonators. CONSTITUTION: The microwave dielectric ceramic composition is represented by the formula, (1-y)(Pb1-xCaxZr0.9Ti0.1)O3 + ySrZrO3 (0.3
Abstract translation: 目的：提供具有高介电常数（大于100）的PbO-ZrO2-CaO-TiO2系介电陶瓷组合物，用于小尺寸和重量轻的微波产品，如滤波器，双工器和谐振器。 构成：微波介电陶瓷组合物由式（1-y）（Pb1-xCaxZr0.9Ti0.1）O3 + ySrZrO3（0.3 <= x <= 0.4,0.3 <= y <= 0.4）表示。 通过以下步骤获得组合物：制备PbZrO3-CaTiO3组合物; 以相应于配方的比例添加SrCO3，ZrO2，CeO2的摩尔分数为0.003〜0.005，降低烧结温度，提高品质因子; 球磨，干燥，烧结1300-1400℃。
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公开(公告)号：KR1020180016107A
公开(公告)日：2018-02-14
申请号：KR1020160100097
申请日：2016-08-05
IPC: H01G4/12 , C04B35/468 , H01G4/30 , H01G13/00
CPC classification number: H01G4/1227 , C04B35/4682 , H01G4/30 , H01G13/00
Abstract: 본발명은기판을준비하는단계, 기판의상부에하부금속층을형성하는단계, 하부금속층의상부에 BSTO층을형성하는단계, 및 BSTO층의상부에상부금속층을형성하는단계를포함하는 BSTO 유전체를갖는축전지의제조방법에관한것이다.
Abstract translation: 本发明是一种BSTO电介质以及形成在成形步骤的顶部，BSTO层上的下层金属层的顶部上的顶部金属层，以形成步骤中，底部金属层在所述基板的顶部，以制备底物，和BSTO层 一种制造具有该电池的电池的方法。
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公开(公告)号：KR101783601B1
公开(公告)日：2017-10-10
申请号：KR1020160035986
申请日：2016-03-25
Applicant: 한국과학기술연구원
Abstract: 본발명은발광소자및 발광소자패키지에관한것이다. 본발명에따른발광소자는, 지지기판; 상기지지기판상에형성된제1 도전성반도체층; 상기제1 도전성반도체층상에형성된활성층; 상기활성층상에형성된제2 도전성반도체층; 및상기제2 도전성반도체층상에형성된격자구조의광확산층;을포함한다.
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