Abstract:
PURPOSE: An avalanche photo diode and a manufacturing method thereof are provided to minimize dark current induced to the upper surface of a clad layer by forming an insulation area in the clad layer between an active area and a guard ring area. CONSTITUTION: An light absorption layer(12) is formed on a substrate(10). A clad layer(18) is formed on the light absorption layer. An active layer(30) is formed in the clad layer. A guard ring area(32) is formed at the circumference of the active area. An insulation area(36) is formed between the guard ring area and the active area.
Abstract:
PURPOSE: An optical module which includes an optical detector and an optical hybrid comprised of a metallic optical waveguide is provided to effectively detect output light of the optical hybrid without using an additional optical component. CONSTITUTION: An optical module structure comprises an optical hybrid(310), a surface incident type optical detector(320), and a platform(330). The optical hybrid includes a metallic optical waveguide. The optical detector is formed for receiving light. The platform comprises an optical hybrid support part, an optical detector support part, and an inclined surface. The inclined surface converts a progress direction of light outputted from the optical hybrid. The platform combines the optical hybrid and the optical detector.
Abstract:
PURPOSE: A laser radar having a micro lens array integrated therein is provided to allow an optical signal to be projected on only a light receiving area of a optical detector through the front face of a micro lens array. CONSTITUTION: A light source unit(110) generates an optical signal. A light transmitting optical lens(120) transmits the optical signal from the light source unit to a target. A light receiving optical lens(140) receives the optical signal reflected from the target object. A converting lens(155) converts the received optical signal to a beam shape optical signal. A microlens array(160) condenses the beam shape optical signal.
Abstract:
PURPOSE: An optical receiver and a forming method thereof are provided to simplify a manufacturing process by forming a photodetector and a hetero junction bipolar transistor simultaneously. CONSTITUTION: A lens(50) is integrated with the rear side of a substrate(10). An optical detector(100) is formed on the front side of the substrate. A hetero junction bipolar transistor(200) is formed on the front side of the substrate. The lens concentrates an incident optical signal and transmits the concentrated optical signal to the optical detector. The optical detector comprises an amplification layer on the substrate and an absorption layer(130) on the amplification layer.
Abstract:
PURPOSE: A method for forming a compound semiconductor device including a diffusion area is provided to implement a dopant diffusion area with high reliability and re-productivity by stabilizing a boundary of the dopant diffusion area. CONSTITUTION: An undoped compound semiconductor layer is formed on a substrate. A dopant element layer is formed on the undoped compound semiconductor layer(S200). A dopant diffusion area is formed by diffusing the dopants from the dopant element layer to the undopped compound semiconductor layer by an annealing process(S210). A rapid cooling process is performed on the substrate with the dopant diffusion area using liquid nitrogen(S215).
Abstract:
본 발명은 초고속 광통신 시스템의 핵심 소자로서 요구되고 있는 광변조기 집적 분포궤환형 레이저 다이오드 및 그 제조 방법에 관한 것으로서, 광변조기 부분에서 빛이 출력되는 면을 광도파로 방향에 대해 비스듬하게 경사진 면으로 형성하여 다시 광도파로로 재입사되는 빛의 양을 줄일 수 있는 반도체 소자를 제공한다. 본 발명에 의하면 광출력단에서 반사되는 빛의 위상을 조절하여 다시 분포궤환형 레이저에 입사되더라도 레이저의 동작 특성을 변화시키지 않도록 하여 반도체 소자가 안정적인 변조 광출력을 낼 수 있도록 한다. 광변조기 집적 분포궤환형 레이저 다이오드, 반사광, 주파수 응답 특성, 재입사
Abstract:
An optical modulator integrated distributed feedback type laser diode and a method for manufacturing the same are provided to prevent operation characteristic of a laser from being varied by light re-incident into a laser diode. An optical modulator integrated distributed feedback type laser diode includes a semiconductor substrate(13). The semiconductor substrate allows an n-type semiconductor doping layer, an active layer, and a p-type semiconductor doping layer to be stacked thereon with an optical waveguide type. An n-type electrode(12) is formed on the n-type semiconductor doping layer. A p-type electrode(23) is formed on the p-type semiconductor doping layer. An optical modulator and a distributed feedback type laser are arranged on two parts of the p-type electrode in a line. An output terminal of the optical modulator is inclined to an optical waveguide direction with a predetermined angle.
Abstract:
A coplanar waveguide for canceling return loss at a discontinuous section and an optical communication module using the same are provided to suppress return loss by compensating for parasitic capacitance at a small outlay. A coplanar waveguide for canceling return loss at a discontinuous section comprises a substrate, a conductive strip(20), the first ground strip(30), the second ground strip(40) and bonding units(52,54). The conductive strip(20), formed on the substrate, comprises a bending part(21), which is bent at an arbitrary angle, and the first opening part(23), which is formed inside of the bending part(21). The first ground strip(30), formed on the substrate and located inside of the conductive strip(20) on the basis of the bending part(21), comprises the second opening part(32) facing the first opening part(23). The second ground strip(40), formed on the substrate, is located at the outside of the conductive strip(20) on the basis of the bending part(21). The bonding units(52,54) conductively connect the first ground strip(30) with the second ground strip(40).
Abstract:
본 발명은 n형의 도핑영역을 포함하는 하부 클래딩층, 흡수층, p형의 도핑영역을 포함하는 상부 클래딩층 및 상기 클래딩층에 각각 접속된 오믹전극을 포함하는 광수신소자에 있어서, p형의 도핑영역은 상기 흡수층 내로 소정 길이 만큼 연장되어 형성된 광수신소자를 제공한다. 본 발명에 의하면, 정공이 지나는 진성 영역에서 만나게 되는 이종 접합 장벽의 영향을 줄임으로써 동작 전압을 낮추고 대역폭을 개선할 수 있게 한다.