Abstract:
A multilayer mirror is constructed and arranged to reflect radiation having a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers selected from the group consisting of: Cr and Sc layers, Cr and C layers, C and B 4 C layers, U and B 4 C layers, Th and B 4 C layers, C and B 9 C layers, La and B 9 C layers U and B 9 C layers, Th and B 9 C layers, La and B layers, C and B layers, U and B layers, and Th and B layers.
Abstract:
Die Erfindung betrifft ein Verfahren zum Entfernen von Kontaminationen auf optischen Oberflächen (26), die in einer Vakuum-Umgebung in einer optischen Anordnung, bevorzugt in einer Projektionsbelichtungsanlage für die EUV- Lithographie, angeordnet sind, umfassend die Schritte: Erzeugen einer molekularen Wasserstoff (18) und zumindest ein Inertgas (17) enthaltenden Restgasatmosphäre in der Vakuum-Umgebung, Erzeugen von Inertgas-Ionen (21 ) durch Ionisieren des Inertgases bevorzugt mittels EUV-Strahlung (20), und Erzeugen von atomarem Wasserstoff (27) durch Beschleunigen der InertgasIonen (21) in der Restgasatmosphäre zum Entfernen der Kontaminationen. Die Erfindung betrifft auch eine zugehörige optische Anordnung.
Abstract:
A method of generating radiation for a lithography apparatus. The method comprises providing a continuously renewing fuel target (50) at a plasma formation location (12) and directing a continuous- wave excitation beam (6) at the plasma formation location such that fuel within the continuously renewing fuel target is excited by the continuous-wave excitation beam to generate a radiation generating plasma.
Abstract:
A source collector apparatus includes a plasma generation apparatus arranged to excite a fuel to form a radiation emitting plasma, a collector arranged to collect the radiation, and a contamination receiving apparatus, wherein the contamination receiving apparatus is provided with a porous structure.
Abstract:
A radiation source having a fuel stream generator (110) that generates and directs a fuel stream (102) along a trajectory towards a plasma formation location (104). A pre-pulse laser radiation assembly directs a first beam of laser radiation (100) at the fuel stream at the plasma formation location to generate a modified fuel target (106). A main pulse laser radiation assembly directs a second beam of laser radiation (108) at the modified fuel target at the plasma formation location to generate a radiation generating plasma (117). A collector (122) collects the radiation and directs it along an optical axis (105) of the radiation source. The first beam of laser radiation being directed toward the fuel stream substantially along the optical axis.
Abstract:
A mirror for reflection of EUV radiation having a wavelength from 5 to 20nm has a multilayer stack of pairs of alternating layers materials having different refractive indices with a protective region is disposed on the stack, the protective region having from 1 to 5 pairs of alternating layers of materials of differing refractive indices disposed on the multilayer stack, so that alternation of magnitude of refractive index continues from the multilayer stack through the protective region. The mirror is arranged so that radiation for reflection is incident upon the protective region before being incident upon the multilayer stack. The materials of the protective region are selected to have a high resistance to blister formation when subjected to bombardment by hydrogen atoms or ions, for instance from an EUV plasma source, in use. For instance, the multilayer stack may be of silicon/molybdenum, with the protective region of silicon nitride/molybdenum. The protective region acts to prevent hydrogen atoms or ions penetrating into and blistering the mirror, but without resulting in excessive losses in the reflectivity of the mirror. The mirror is particularly useful as a collector mirror such as a normal incidence collector for laser produced plasma EUV sources and is useful for device lithography and in lithography apparatus.
Abstract:
Disclosed is an electrostatic clamp apparatus ( 500 ) constructed to support a patterning device ( 505 ) of a lithographic apparatus, comprising a support structure against which said patterning device is supported, clamping electrodes ( 525 ) for providing a clamping force between the support structure and patterning device, and an array of capacitive sensors ( 660 ) operable to measure the shape of said patterning device.
Abstract:
A metal component (262M, 300M) is designed for use in an EUV lithography apparatus, for example as a spectral purity filter (260) or a heating element (300) in a hydrogen radical generator. An exposed surface of the metal is treated (262P, 300P) to inhibit the formation of an oxide of said metal in an air environment prior to operation. This prevents contamination of optical components by subsequent evaporation of the oxide during operation of the component at elevated temperatures.
Abstract:
A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from a material having a bulk reflectance of substantially greater than or equal to 70% at the first wavelength of radiation. The material has a melting point above 1000 °C.
Abstract:
Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.