Abstract:
There is disclosed a lithographic apparatus provided with a spectral purity filter which is provided in the projection system (PSW) and adjacent the substrate table (WT). The spectral purity filter is preferably a membrane (14) formed of polysilicon, a multilayer material, a carbon nanotube material or graphene. The membrane may be provided with a protective capping layer, and/or a thin metal transparent layer.
Abstract:
A spectral purity filter includes a substrate, a plurality of apertures through the substrate, and a plurality of walls. The walls define the plurality of apertures through the substrate. The spectral purity filter also includes a first layer formed on the substrate to reflect radiation of a first wavelength, and a second layer formed on the first layer to prevent oxidation of the first layer. The apertures are constructed and arranged to be able to transmit at least a portion of radiation of a second wavelength therethrough.
Abstract:
A radiation system comprises a fuel emitter configured to provide fuel to a plasma formation region, a laser arranged to provide a laser beam at the plasma formation region incident on the fuel to generate a radiation emitting plasma, and a reflective or transmissive device (30) arranged to receive radiation emitted by the plasma and to reflect or transmit at least some of the received radiation along a desired path, wherein the reflective or transmissive device comprises a body configured to reflect and/or transmit said at least some of the radiation, and selected secondary electron emission (SEE) material (34) arranged relative to the body such as to emit secondary electrons in response to the received radiation, thereby to clean material from a surface of the device.
Abstract:
In order to limit the negative effect of metal contamination on reflectivity within an EUV lithography device, a reflective optical element (50) is proposed for the extreme ultraviolet and soft X-ray wavelength range with a reflective surface (59) with an uppermost layer (56), in which the uppermost layer (56) comprises one or more organic silicon compounds with a carbon-silicon and/or silicon-oxygen bond.
Abstract:
A method and apparatus for cleaning vacuum ultraviolet (VUV) optics (e.g., mirrors of a VUV) of a wafer inspection system is disclosed. The cleaning system ionizes or disassociates the hydrogen gas in VUV optics environment to generate hydrogen radicals (e.g., H*) or ions (e.g., H+, H2+, H3+), which remove water or hydrocarbons from the surface of the mirrors. The VUV mirrors may comprise a reflective material, such as aluminum. The VUV mirrors may have a protective coating to protect the reflective material from any detrimental reaction to the hydrogen radicals or ions. The protective coating may comprise a noble metal.
Abstract:
A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane (44) is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles (54) through the membrane. A particle trapping structure (52) is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles (58) from inside the chamber to outside the chamber.
Abstract:
An arrangement for use in a projection exposure tool (100) for microlithography comprises a reflective optical element (10; 110) and a radiation detector (30; 32; 130). The reflective optical element (10; 110) comprises a carrier element (12) guaranteeing the mechanical strength of the optical element (10; 110) and a reflective coating (18) disposed on the carrier element (12) for reflecting a use radiation (20a). The carrier element (12) is made of a material which upon interaction with the use radiation (20a) emits a secondary radiation (24) the wavelength of which differs from the wavelength of the use radiation (20a), and the radiation detector (30; 32; 130) is configured to detect the secondary radiation (24).
Abstract:
A method of manufacturing a multi-layer mirror (500) comprising a multi-layer stack of pairs of alternating layers of a first material (510) and silicon (520), the method comprising depositing a stack of pairs of alternating layers of the first material and layers of silicon, the stack being supported by a substrate and doping at least a first layer (540) of the first material with a dopant material.
Abstract:
A source collector apparatus includes a plasma generation apparatus arranged to excite a fuel to form a radiation emitting plasma, a collector arranged to collect the radiation, and a contamination receiving apparatus, wherein the contamination receiving apparatus is provided with a porous structure.
Abstract:
A metal component (262M, 300M) is designed for use in an EUV lithography apparatus, for example as a spectral purity filter (260) or a heating element (300) in a hydrogen radical generator. An exposed surface of the metal is treated (262P, 300P) to inhibit the formation of an oxide of said metal in an air environment prior to operation. This prevents contamination of optical components by subsequent evaporation of the oxide during operation of the component at elevated temperatures.