METHODS AND APPARATUS FOR MEASUREMENT OF A PARAMETER OF A FEATURE FABRICATED ON A SEMICONDUCTOR SUBSTRATE

    公开(公告)号:WO2019015995A1

    公开(公告)日:2019-01-24

    申请号:PCT/EP2018/068346

    申请日:2018-07-06

    Abstract: Methods and apparatus for estimation of at least one parameter of interest of a feature fabricated on a substrate, the feature comprising a plurality of structure parameters, the structure parameters comprising the at least one parameter of interest and one or more nuisance parameters. A receiver receives radiation scattered from one or more measured features on the substrate; a pupil generator generates an unprocessed pupil representation of the received radiation; a matrix multiplier multiplies the transformation matrix with the intensities of each of the pixels of the unprocessed pupil representation to determine a post-processed pupil representation in which the effects of the nuisance parameters are mitigated or removed; and a parameter estimator estimates the at least one parameter of interest based on the post-processed pupil representation.

    METHODS AND APPARATUS FOR SIMULATING INTERACTION OF RADIATION WITH STRUCTURES, METROLOGY METHODS AND APPARATUS, DEVICE MANUFACTURING METHOD
    23.
    发明申请
    METHODS AND APPARATUS FOR SIMULATING INTERACTION OF RADIATION WITH STRUCTURES, METROLOGY METHODS AND APPARATUS, DEVICE MANUFACTURING METHOD 审中-公开
    用于模拟辐射与结构相互作用的方法和装置,计量方法和装置,装置制造方法

    公开(公告)号:WO2017063839A1

    公开(公告)日:2017-04-20

    申请号:PCT/EP2016/072500

    申请日:2016-09-22

    Abstract: A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (306). A processor (308) calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model (600, 610) is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.

    Abstract translation: 感兴趣的结构例如在X射线或EUV波段中用辐射照射,并且由检测器(306)检测散射辐射。 处理器(308)通过模拟辐射与结构的相互作用并将模拟的相互作用与检测到的辐射进行比较来计算诸如线宽(CD)的属性。 使用分层结构模型(600,610)以数值方法表示结构。 结构模型为结构的每一层定义了均匀的背景介电常数,并且为至少一个层定义了非均匀的对比介电常数。 该方法使用Born近似中的麦克斯韦方程,其中对比介电常数和总场的乘积近似为对比介电常数和背景场的乘积。 与已知方法相比,计算复杂度降低了几个数量级。

    APPARATUS AND METHOD FOR DETERMINING THREE DIMENSIONAL DATA BASED ON AN IMAGE OF A PATTERNED SUBSTRATE

    公开(公告)号:WO2022128373A1

    公开(公告)日:2022-06-23

    申请号:PCT/EP2021/082756

    申请日:2021-11-24

    Abstract: Described herein are system, method, and apparatus for determining three-dimensional (3D) information of a structure of a patterned substrate. The 3D information can be determined using one or more model configured to generate 3D information (e.g., depth information) using only a single image of a patterned substrate. In a method, the model is trained by obtaining a pair of stereo images of a structure of a patterned substrate. The model generates, using a first image of the pair of stereo images as input, disparity data between the first image and a second image, the disparity data being indicative of depth information associated with the first image. The disparity data is combined with the second image to generate a reconstructed image corresponding to the first image. Further, one or more model parameters are adjusted based on the disparity data, the reconstructed image, and the first image.

    METHOD FOR INCREASING CERTAINTY IN PARAMETERIZED MODEL PREDICTIONS

    公开(公告)号:WO2021043551A1

    公开(公告)日:2021-03-11

    申请号:PCT/EP2020/072593

    申请日:2020-08-12

    Abstract: A method for increasing certainty in parameterized model predictions is described. The method comprises clustering dimensional data in a latent space associated with a parameterized model into clusters. Different clusters correspond to different portions of a given input. The method comprises predicting, with the parameterized model, an output based on the dimensional data in the latent space. The method comprises transforming, with the parameterized model, the dimensional data in the latent space into a recovered version of the given input that corresponds to one or more of the clusters. In some embodiments, the method comprises determining which clusters correspond to predicted outputs with higher variance, and making the parameterized model more descriptive by adding to the dimensionality of the latent space, and/or training the parameterized model with more diverse training data associated with one or more of the determined clusters or parts of clusters associated with the higher variance.

    METHOD FOR DECREASING UNCERTAINTY IN MACHINE LEARNING MODEL PREDICTIONS

    公开(公告)号:WO2020109074A1

    公开(公告)日:2020-06-04

    申请号:PCT/EP2019/081774

    申请日:2019-11-19

    Abstract: Described herein is a method for quantifying uncertainty in parameterized (e.g., machine learning) model predictions. The method comprises causing a parameterized model to predict multiple posterior distributions from the parameterized model for a given input. The multiple posterior distributions comprise a distribution of distributions. The method comprises determining a variability of the predicted multiple posterior distributions for the given input by sampling from the distribution of distributions; and using the determined variability in the predicted multiple posterior distributions to quantify uncertainty in the parameterized model predictions. The parameterized model comprises encoder-decoder architecture. The method comprises using the determined variability in the predicted multiple posterior distributions to adjust the parameterized model to decrease the uncertainty of the parameterized model for predicting wafer geometry, overlay, and/or other information as part of a semiconductor manufacturing process.

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