公开(公告)号：US20210096474A1

公开(公告)日：2021-04-01

申请号：US16499349

申请日：2018-04-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Bart LAENENS

IPC: G03F7/20

Abstract: Methods and apparatus for determining a focus of a projection system are disclosed. In one arrangement, a method includes obtaining first data derived from a first measurement of one or more selected properties of a target pattern formed on a substrate by exposing the substrate using the projection system. The first measurement is performed before the substrate is etched based on the target pattern. The method further includes obtaining second data derived from a second measurement of the one or more selected properties of the target pattern. The second measurement is performed after the substrate is etched based on the target pattern. The method further includes determining the focus of the projection system using the first data and the second data.

公开(公告)号：US20200310242A1

公开(公告)日：2020-10-01

申请号：US16099452

申请日：2017-05-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus VAN HAREN ,  Reiner Maria JUNGBLUT ,  Leon Paul VAN DIJK ,  Willem Seine Christian ROELOFS ,  Wim Tjibbo TEL ,  Stefan HUNSCHE ,  Maurits VAN DER SCHAAR

IPC: G03F1/36 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00

Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.

公开(公告)号：US20200249576A1

公开(公告)日：2020-08-06

申请号：US16635584

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick WARNAAR ,  Patricius Aloysius Jacobus TINNEMANS ,  Grzegorz GRZELA ,  Everhardus Cornelis MOS ,  Wim Tjibbo TEL ,  Marinus JOCHEMSEN ,  Bart Peter Bert SEGERS ,  Frank STAALS

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US20190243259A1

公开(公告)日：2019-08-08

申请号：US16318388

申请日：2017-06-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Frank STAALS ,  Martin Jules Marie-Emile DE NIVELLE ,  Tanbir HASAN

IPC: G03F9/00 ,  G05B19/4097

CPC classification number: G03F9/7034 ,  G05B19/4097 ,  G05B2219/45028 ,  G05B2219/45031

Abstract: A method of determining topographical variation across a substrate on which one or more patterns have been applied. The method includes obtaining measured topography data representing a topographical variation across a substrate on which one or more patterns have been applied by a lithographic process; and combining the measured topography data with knowledge relating to intra-die topology to obtain derived topography data having a resolution greater than the resolution of the measured topography data. Also disclosed is a corresponding level sensor apparatus and lithographic apparatus having such a level sensor apparatus, and a more general method of determining variation of a physical parameter from first measurement data of variation of the physical parameter across the substrate and intra-die measurement data of higher resolution than the first measurement data and combining these.

公开(公告)号：US20190204749A1

公开(公告)日：2019-07-04

申请号：US16325228

申请日：2017-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Jozef Maria FINDERS ,  Orion Jonathan Pierre MOURAILLE ,  Anton Bernhard VAN OOSTEN

IPC: G03F7/20

Abstract: A method of tuning a patterning stack, the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack on a substrate is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack; varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.

公开(公告)号：US20190025705A1

公开(公告)日：2019-01-24

申请号：US16067303

申请日：2016-12-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans VAN DER LAAN ,  Wim Tjibbo TEL ,  Marinus JOCHEMSEN ,  Stefan HUNSCHE

IPC: G03F7/20 ,  H01L21/66 ,  G06F17/50

Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

公开(公告)号：US20180224752A1

公开(公告)日：2018-08-09

申请号：US15579938

申请日：2016-05-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Frank STAALS ,  Mark John MASLOW

IPC: G03F7/20

CPC classification number: G03F7/70533 ,  G03F7/70525 ,  G03F7/70891 ,  H01L21/0274

Abstract: A method for adjusting a lithography process, wherein processing parameters of the lithography process include a first group of processing parameters and a second group of processing parameters, the method including: obtaining a change of the second group of processing parameters; determining a change of a sub- process window (sub-PW) as a result of the change of the second group of processing parameters, wherein the sub-PW is spanned by only the first group of processing parameters; and adjusting the first group of processing parameters based on the change of the sub-PW.

公开(公告)号：US20240004299A1

公开(公告)日：2024-01-04

申请号：US18233263

申请日：2023-08-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Frank STAALS ,  Paul Christiaan HINNEN

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/2043 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/705 ,  G03F7/70616 ,  H01L22/20

Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

公开(公告)号：US20220365446A1

公开(公告)日：2022-11-17

申请号：US17874582

申请日：2022-07-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Manouk RIJPSTRA ,  Cornelis Johannes Henricus LAMBREGTS ,  Wim Tjibbo TEL ,  Sarathi ROY ,  Cédric Désiré GROUWSTRA ,  Chi-Fei NIEN ,  Weitian KOU ,  Chang-Wei CHEN ,  Pieter Gerardus Jacobus SMORENBERG

IPC: G03F7/20

Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.

公开(公告)号：US20220260925A1

公开(公告)日：2022-08-18

申请号：US17738093

申请日：2022-05-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Bart Peter Bert SEGERS ,  Everhardus Cornelis MOS ,  Emil Peter SCHMITT-WEAVER ,  Yichen ZHANG ,  Petrus Gerardus VAN RHEE ,  Xing Lan LIU ,  Maria KILITZIRAKI ,  Reiner Maria JUNGBLUT ,  Hyunwoo YU

IPC: G03F7/20 ,  G06N3/02

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.