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    MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING
    22.
    发明专利
    MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING 未知

    公开(公告)号：SG187739A1

    公开(公告)日：2013-03-28

    申请号：SG2013009121

    申请日：2011-08-05

    Applicant: BREWER SCIENCE INC

    Inventor： PULIGADDA RAMA ,  ZHONG XING-FU ,  FLAIM TONY D ,  MCCUTCHEON JEREMY

    Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

    SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING
    23.
    发明专利
    SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING 未知

    公开(公告)号：SG179209A1

    公开(公告)日：2012-05-30

    申请号：SG2012019063

    申请日：2010-09-15

    Applicant: BREWER SCIENCE INC

    Inventor： YESS KIMBERLY A ,  DAILY MADISON M JR ,  FLAIM TONY D

    Abstract: Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings are formed from a composition comprising a component dissolved or dispersed in a solvent system. The component is selected from the group consisting of styrene-acrylonitrile copolymers and aromatic sulfone polymers.

    METHOD OF MAKING RADIATION-SENSITIVE SOL-GEL MATERIALS
    26.
    发明申请
    METHOD OF MAKING RADIATION-SENSITIVE SOL-GEL MATERIALS 审中-公开
    制造辐射敏感性溶胶凝胶材料的方法

    公开(公告)号：WO2012142126A3

    公开(公告)日：2013-05-02

    申请号：PCT/US2012033073

    申请日：2012-04-11

    Applicant: BREWER SCIENCE INC ,  LIN QIN ,  WANG YUBAO ,  FLAIM TONY D

    Inventor： LIN QIN ,  WANG YUBAO ,  FLAIM TONY D

    IPC: H01L21/027

    CPC classification number: G03F7/075 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/20

    Abstract: Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 m.

    Abstract translation: 提供了辐射敏感的溶胶 - 凝胶组合物，以及形成微电子结构和如此形成的结构的方法。 组合物包含分散或溶解在溶剂体系中的溶胶 - 凝胶化合物和碱产生剂。 溶胶 - 凝胶化合物包括具有与硅结合的可交联部分的包含硅的重复单体单元。 暴露于辐射后，基底发生器产生强碱，其使组合物中的溶胶 - 凝胶化合物交联，得到不溶于显影剂或溶剂的交联层。 可以除去该层的未曝光部分以产生图案化的溶胶 - 凝胶层。 本发明可以用于形成包含特征尺寸小于约1μm的特征的溶胶 - 凝胶材料的图案。

    ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS
    27.
    发明申请
    ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS 审中-公开
    用于低k电介质材料的抗反射涂料组合物

    公开(公告)号：WO02099531A2

    公开(公告)日：2002-12-12

    申请号：PCT/US0215694

    申请日：2002-05-14

    Applicant: BREWER SCIENCE INC

    Inventor： PULIGADDA RAMA ,  LAMB JAMES E III ,  FLAIM TONY D ,  HUANG RUNHUI ,  SHAO XIE

    IPC: H01L21/312 ,  G03F7/09 ,  G03F

    CPC classification number: G03F7/091 ,  Y10S438/952 ,  Y10T428/31511 ,  Y10T428/31525

    Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

    Abstract translation: 提供抗反射组合物和使用具有低介电常数材料的那些组合物的方法。 在一个实施方案中，组合物包括包含具有未反应的环氧基团的重复单体的聚合物。 在另一个实施方案中，聚合物还包含包含与光衰减化合物反应以便打开环的环氧化物环的重复单体。 组合物可以施加到电介质层，以便在双镶嵌工艺期间最小化或防止反射，同时阻挡当将有机抗反射涂层施加到低介电常数层时通常发生的通孔或光致抗蚀剂中毒。

    SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING
    28.
    发明申请
    SCRATCH-RESISTANT COATINGS FOR PROTECTING FRONT-SIDE CIRCUITRY DURING BACKSIDE PROCESSING 审中-公开
    背面处理时用于保护前端电路的抗刮擦涂层

    公开(公告)号：WO2011034897A3

    公开(公告)日：2011-07-14

    申请号：PCT/US2010048899

    申请日：2010-09-15

    Applicant: BREWER SCIENCE INC ,  YESS KIMBERLY A ,  DAILY MADISON M JR ,  FLAIM TONY D

    Inventor： YESS KIMBERLY A ,  DAILY MADISON M JR ,  FLAIM TONY D

    IPC: H01L21/48 ,  C08J5/18 ,  C09D125/12

    CPC classification number: H01L21/561 ,  H01L23/293 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    Abstract: Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings are formed from a composition comprising a component dissolved or dispersed in a solvent system. The component is selected from the group consisting of styrene-acrylonitrile copolymers and aromatic sulfone polymers.

    Abstract translation: 提供了用于在背面处理期间保护正面微机电和半导体器件特征的耐刮擦涂层以及使用该涂层的方法。 该涂层是非光敏的，可移除的，并且可以承受高的加工温度。 这些涂层也消除了在器件设计中需要单独的蚀刻停止层。 该涂层由包含溶解或分散在溶剂体系中的组分的组合物形成。 该组分选自苯乙烯 - 丙烯腈共聚物和芳族砜聚合物。

    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES
    29.
    发明申请
    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 审中-公开
    微电子基片湿蚀刻加工的SPIN-ON保护涂层

    公开(公告)号：WO2009035866A3

    公开(公告)日：2009-05-14

    申请号：PCT/US2008074773

    申请日：2008-08-29

    Applicant: BREWER SCIENCE INC ,  XU GU ,  YESS KIMBERLY A ,  FLAIM TONY D

    Inventor： XU GU ,  YESS KIMBERLY A ,  FLAIM TONY D

    IPC: C08L25/04 ,  C09D125/04

    CPC classification number: H01L21/0271 ,  B81C1/00801 ,  C08L63/04 ,  C09D125/12 ,  Y10T428/31511 ,  Y10T428/31663 ,  C08L2666/14

    Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

    Abstract translation: 提供了用于半导体和MEMS器件生产期间的湿法蚀刻工艺的新的保护涂层。 这些层包括底漆层，第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯，丙烯腈和相容性化合物如单体，低聚物和包含环氧基团的聚合物制备的热塑性共聚物; 聚（苯乙烯 - 共 - 烯丙醇）; 和它们的混合物。 第二保护层包含高度卤化的聚合物，例如氯化聚合物，其可以在加热时交联或不交联。

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