公开(公告)号：JPH0421852A

公开(公告)日：1992-01-24

申请号：JP12533890

申请日：1990-05-17

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  MIYAKE AKIRA

IPC: G21K5/00 ,  G03F1/22 ,  G03F7/20 ,  H01J35/18 ,  H01L21/027 ,  H05G1/00 ,  H05G2/00

Abstract: PURPOSE:To improve the uniformity of X-ray transmissivity by applying a negative type photosensitive film on one surface of a Be film of an X-ray taking out window and irradiating the film with X-rays from the opposite side, then developing the film. CONSTITUTION:The negative type photosensitive film 4 is formed by applying a negative resist 4 on one surface of the beryllium Be film 3 and hereafter, the film 4 is irradiated with the X-rays 5 from the opposite side. The negative type photosensitive film 4 hardly remains in the position where the Be film 3 is thick and the negative type photosensitive film 4 conversely remains thick in the position where the Be film 3 is thin if such film is developed. Consequently, the total thickness of the Be film 3 and the negative type photosensitive film 4 is uniformized overall and, therefore, the intensity at which the X-rays are transmitted is eventually averaged. The excellent characteristic to uniformize the X-ray transmissivity is obtd. in this way.

公开(公告)号：JPH0353199A

公开(公告)日：1991-03-07

申请号：JP18608089

申请日：1989-07-20

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  KUROSAWA HIROSHI ,  UDA KOJI ,  OZAWA KUNITAKA ,  TERAJIMA SHIGERU ,  UZAWA SHUNICHI

IPC: G01T1/29 ,  G21K5/00 ,  G21K5/04 ,  H01L21/027 ,  H01L21/30 ,  H05H13/04

Abstract: PURPOSE:To efficiently perform exposure of high precision by controlling the exposure time based on measurement results of the orbiting electron current quantity measuring means of a synchrotron orbit radiation (SOR) ring and an X-ray intensity measuring means corresponding to the exposure area. CONSTITUTION:Electrons are supplies from an injector 10 to an SOR ring 1 with a shutter 7 closed and are accelerated to generate the radiation. Thereafter, an exposure intensity measuring instruction is outputted from a CPU 16, and an X-ray detector 6 is fed into the exposure area through an X-ray detector control part 14 by an X-ray detector driving part 12 to measure the intensity of X rays in the exposure area. The quantity of current of orbiting electrons is measured by an ammeter 17 simultaneously with measurement of the detector 6, and the measured current value is sent to the unit 16 through a signal processing part 18. The unit 16 calculates the intensity of X-ray for exposure based on the measured intensity of X rays. The exposure time is calculated and set in accordance with a set exposure and an X-ray mask 8 and a wafer 8 are aligned. Thereafter, an exposure instruction is issued to a shutter control part 15 by the unit 16 to start the exposure.

公开(公告)号：JPH02100311A

公开(公告)日：1990-04-12

申请号：JP25299188

申请日：1988-10-06

Applicant: CANON KK

Inventor： UZAWA SHUNICHI ,  KARIYA TAKUO ,  HIGOMURA MAKOTO ,  MIZUSAWA NOBUTOSHI ,  EBINUMA RYUICHI ,  UDA KOJI ,  OZAWA KUNITAKA ,  AMAMIYA MITSUAKI ,  SAKAMOTO EIJI ,  ABE NAOTO ,  SAITO KENJI

IPC: G21K1/06 ,  G03F7/20 ,  G03F9/00 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01L21/027 ,  H01L21/30 ,  H05H13/04

Abstract: PURPOSE:To reduce influence of a particle and contamination by adopting a vertical-type transfer mechanism and a vertical-type exposure stage corresponding to an SOR-X-ray light source and by adopting the transfer of a mask and a wafer within a complete sealed environment. CONSTITUTION:A stage device 1301 maintains a wafer vertically for light axis of SOR(Synchrotron Orbital Radiation) light, has a positioning resolution which is equal to or less than 0.01mum, and moves the wafer three-dimensionally. In this case, an exposure unit is covered with a main chamber which is filled with a highly pure helium with a purity of approximately 99.99% or more inside. Then, the stage device 1301 for retaining the mask 2 and the wafer 3, a wafer supply/collection device 1303 for supplying or collecting the wafer, a mask transfer device 1311 for transferring the mask between a mask cassette 1310 and the mask stage are housed within that environment. It secures a high accuracy and neither generate garbage nor generate waste time.

公开(公告)号：JPH0276215A

公开(公告)日：1990-03-15

申请号：JP22738988

申请日：1988-09-13

Applicant: CANON KK

Inventor： HARA SHINICHI ,  AMAMIYA MITSUAKI ,  MIZUSAWA NOBUTOSHI ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To make an exposure amount uniform inside a field angle and to enable uniform exposure by deciding a driving speed of a movable member of an exposure adjusting means according to aged decay characteristics of irradiation strength to an irradiation object and by driving a stage which supports the movable member or the irradiation object. CONSTITUTION:An X-ray detector 22 is provided to a stage 7. The wafer stage 7 is moved before exposure, a beam strength is measured by the detector 22, and a time constant tau of decay is decided inside a shutter control section. For example, when a time constant of beam decay is 7600sec, a beam strength at time T1 is 1mW/cm , and a required exposure amount is 120mJ/cm , an optimum exposure time is 121sec. An opening restriction member 11 of a movable aperture is moved in +z direction by a driving device 15 at a speed of (Z2-Z1)/121 from time T1 to time T2, 121sec thereafter, and then stopped. An exposure amount inside a field angle is thereby made constant thus exposing a wafer uniformly.

公开(公告)号：JPH01284787A

公开(公告)日：1989-11-16

申请号：JP11262988

申请日：1988-05-11

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  KUMOMI HIDEYA

IPC: G01J1/02 ,  G01T1/12 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To measure the intensity of radiation in a short time and with high accuracy by irradiating a sample which absorbs the radiation with the radiation and calculating the intensity of the radiation from the temperature detected value of the sample. CONSTITUTION:When a data processing and controlling part 5 sends a signal to a shutter driving part 6, a shutter 7 is driven to the left in the figure and opened to project X rays shown by an arrow 1. The X rays are absorbed by the sample 2, and consequently the temperature T of the sample 2 rises. The temperature T of the sample 2 is measured by a thermocouple 3. At this time, the container 8 is held at constant temperature T0. Then T-T0=DELTAT and the intensity of the X rays which are incident as shown by the arrow 1 is calculated from variation in DELTAT.

公开(公告)号：JP2002043220A

公开(公告)日：2002-02-08

申请号：JP2001149563

申请日：2001-05-18

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  WATANABE YUTAKA

IPC: G21K5/02 ,  G03F1/22 ,  G03F7/20 ,  H01L21/027 ,  H05G2/00 ,  H05H1/24 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To obtain a further appropriate resist pattern by enlarging both a mask pattern size and a resist pattern width and increasing the controllable parameter. SOLUTION: In an X-ray aligner wherein a pattern of a mask 1 is exposed and transferred to a wafer 2 by radiating X-ray on the mask 1 disposed in a mask stage 20 close with a prescribed proximity gap and the wafer 2 disposed in a wafer stage 3, X-ray is supplied from plasma X-ray source which generates plasma at a plurality of positions A1, A2,...An during exposure, plasma X-ray source generates plasma by the method of applying a pulse-like voltage between electrodes 31, 32 and furthermore, and a means for moving the plasma by magnetic field between magnetic poles 33, 34 is provided.

公开(公告)号：JP2001155986A

公开(公告)日：2001-06-08

申请号：JP33573399

申请日：1999-11-26

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To set a highly accurate light exposure by detecting the intensity of X-rays stably. SOLUTION: The aligner for transferring a mask pattern to an wafer coated with resist comprises means for setting a light exposure based on the intensity of X-rays passed through a filter and the intensity of X-rays not passed through a filter wherein the filter is made of such a material as not causing chemical reaction in the exposure wavelength region of X-rays. Since a filter having high X-ray resistance and invariant film thickness can be employed, a highly accurate light exposure can be set without causing any measurement error even after long term use.

公开(公告)号：JP2000277427A

公开(公告)日：2000-10-06

申请号：JP8586299

申请日：1999-03-29

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  UZAWA SHUNICHI ,  CHIBA KEIKO ,  WATANABE YUTAKA

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To improve pattern overlay accuracy between layers on a substrate by exposing each of first and second layers through a plurality of original films, and forming at least one of first layer exposure original films and at least one of second layer exposure original films partially of the same design. SOLUTION: When a first layer is formed on a substrate, resist for a first layer on a substrate is exposed by double exposure of fine pattern exposure and rough pattern exposure, and a resist pattern which is required for a first layer is transferred and developed. As for a second layer which is formed on a substrate, a pattern is also prepared by double exposure of fine pattern exposure and rough pattern exposure. In the process, a fine mask 4 used during formation of the fine pattern 1 of a second layer is the same mask as a mask comprising the same design part as a mask used during formation of a fine pattern image of a first layer or a mask used when a fine pattern image of a first layer is formed.

公开(公告)号：JPH09260245A

公开(公告)日：1997-10-03

申请号：JP6412296

申请日：1996-03-21

Applicant: CANON KK

Inventor： TSUKAMOTO MASAMI ,  AMAMIYA MITSUAKI

IPC: G03F1/82 ,  H01L21/027 ,  H01L21/66 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To reduce the number to times of cleaning of a mask for exposure use and the number of times of correction of the mask for exposure use and to make the use efficiency of the mask enhance by a method wherein a foreign substance removal device for the mask is provided with a means for electrifying a foreign substance adhering to the mask or a means for making the foreign substance polarize. SOLUTION: A mechanism, which removes the simplest foreign substance, is one provided with an electrode in opposition to a mask pattern. A reflection type mask 1 is formed into a structure, wherein a multilayer film 2 is formed on a substrate 3 as a reflective surface and moreover, absorber layers 4, which are desired patterns, are formed on the layer 2. The electrode 5 is arranged in opposition to the mask pattern of the mask 1 and a high voltage is applied to the electrode 5. The layer 2 is regarded as roughly a conductor and the surface of the layer 2 is charged with a charge reverse to that in the electrode. As a result, in the case where a foreign substance adhered to the surface of the layer 2 is a conductor, the foreign substance is electrified integrally with the surface of the layer 2, repulses the layer 2 to separate from the surface of the layer 2 and is attracted to the electrode 5. In the case where the foreign substance is an insulator, the foreign substance is dielectrically polarized and is attracted to the electrode 5 according to a field gradient.

公开(公告)号：JPH0961988A

公开(公告)日：1997-03-07

申请号：JP21741095

申请日：1995-08-25

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  CHIBA KEIKO

IPC: G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To obtain a mask capable of greatly improving the resolution for exposure by setting the thickness of phase shifters in such a manner that the phase of the radiation transmitted through absorbers and the phase of the radiation transmitted through the phase shifters are shifted by a specific amt. SOLUTION: The absorbers 2 translucent to the radiation 4 and the phase shifters 3 which are formed on both side parts thereof and vary in the compsn. from the absorbers 2 are formed on a membrane 1. The deviation in the phases of the radiation 4 transmitted through the absorbers 2 and the phase shifters 3 is so set as to attain (1+2n)×(2π/λ), where A is a radiation wavelength and (m) is an integer. The radiation 4 is preferably X-rays or vacuum UV rays. The material of the absorbers is preferably W and the material of the phase shifters is Al. The phase of the X-rays transmitted through the absorbers 2 and the membrane 3 shifts by π from the phase of the X-rays transmitted through the phase shifters. The resolution for exposure is improved and the production of the high-accuracy device is made possible if the mask constituted in such a manner is used.