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    21.
    发明专利
    未知

    公开(公告)号：DE68927430D1

    公开(公告)日：1996-12-12

    申请号：DE68927430

    申请日：1989-08-31

    Applicant: CANON KK

    Inventor： KUROSAWA HIROSHI ,  AMEMIYA MITSUAKI ,  TERASHIMA SHIGERU ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI

    IPC: G03F7/20

    Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

    23.
    发明专利
    未知

    公开(公告)号：DE68923638T2

    公开(公告)日：1996-01-18

    申请号：DE68923638

    申请日：1989-03-28

    Applicant: CANON KK

    Inventor： AMEMIYA MITSUAKI ,  UZAWA SHUNICHI

    IPC: G03F1/00

    Abstract: A method and apparatus for inspecting and repairing a mask usable in manufacture of semiconductor microcircuits, by using an electron beam is disclosed. The inspection and repair of a mask pattern are made in a single apparatus, by using a controlled current of electron beam. For inspection, the surface of a mask (4) having a mask pattern (3) and a radiation-sensitive layer (5), covering it, is scanned with an electron beam (6) and, by detecting (7) secondary electrons or reflected electrons caused at that time, the state of the pattern is inspected. If any defect is detected (12-15), the portion of the radiation-sensitive layer on the detected defect is irradiated with an electron beam of greater magnitude than that for the inspection and, thereafter, the exposed portion of the radiation-sensitive layer is removed. Then, etching or plating is made to the thus uncovered portion, whereby repair of the mask pattern is made.

    25.
    发明专利
    未知

    公开(公告)号：DE3712049A1

    公开(公告)日：1987-11-12

    申请号：DE3712049

    申请日：1987-04-09

    Applicant: CANON KK

    Inventor： AMEMIYA MITSUAKI

    IPC: G03F7/20 ,  H05G2/00 ,  H01L21/312 ,  H01L21/47 ,  H01J35/00 ,  G21K5/04 ,  H05G1/26 ,  H05H1/24

    Abstract: A device for generating X-rays is disclosed, which includes a portion for producing plasma in a predetermined space, for generation of the X-rays, and a wall uni effective to define a surface substantially surrounding the space, the wall unit including a portion which is made of a dielectric material and which is made movable so as to compensate for consumption of the dielectric material due to the production of the plasma by the plasma producing portion. Also, an X-ray exposure apparatus usable with a mask having a pattern and a wafer, for transferring the pattern of the mask onto the wafer, is disclosed. The apparatus includes an X-ray source for producing X-rays, an exposure system for exposing the mask and the wafer under an exposure condition, the exposing system including a holder for holding the mask and the wafer so that the mask is exposed to the X-rays from the X-ray source and so that the wafer is exposed to the X-rays passed through the mask, such that the pattern of the mask is transferred onto the wafer, and a control system for controlling the exposure condition so that the pattern transferred onto the wafer has a desired width of line.

    28.
    发明专利
    未知

    公开(公告)号：DE69033791D1

    公开(公告)日：2001-10-11

    申请号：DE69033791

    申请日：1990-10-19

    Applicant: CANON KK

    Inventor： TANAKA YUTAKA ,  MIZUSAWA NOBUTOSHI ,  KARIYA TAKAO ,  UZAWA SHUNICHI ,  AMEMIYA MITSUAKI

    IPC: G21K5/00 ,  G03F7/20 ,  H01L21/027

    Abstract: An X-ray exposure apparatus, for transferring a pattern of the mask (13) to a wafer (15), includes an X-ray source accommodating chamber (50); a mask chuck (14) for supporting the mask; a wafer chuck (16) for supporting the wafer; a stage (18) for moving the wafer chuck; a stage accommodating chamber (19) for accommodating therein the mask chuck, the wafer chuck and the stage; a barrel (5) for coupling the X-ray source accommodating chamber with the stage accommodating chamber, to define an X-ray projection passageway (30); a blocking window (6) provided in the X-ray projection passageway, for isolating the ambience in the X-ray accommodating chamber and the ambience in the stage accommodating chamber from each other; and a gas supply port (3) contributable to fill the stage accommodating chamber with a gas ambience of low X-ray absorption. The gas supply port opens to the X-ray projection passageway at a position between the blocking window and the mask supported by the mask chuck.

    29.
    发明专利
    未知

    公开(公告)号：DE69033002T2

    公开(公告)日：1999-09-02

    申请号：DE69033002

    申请日：1990-10-01

    Applicant: CANON KK

    Inventor： SAKAMOTO EIJI ,  EBINUMA RYUICHI ,  AMEMIYA MITSUAKI ,  UZAWA SHUNICHI ,  UDA KOJI

    IPC: G03F7/20

    Abstract: An exposure apparatus includes a chamber (1) for placing the article in a predetermined ambience; holding device (5) for holding the article in the chamber; a fluid supplying device (3) for supplying a temperature adjusting fluid into the holding device through a flow passageway (4); a detecting device (2) for detecting leakage of the fluid from the flow passageway; and a flow rate controlling device (9) for controlling the flow rate of the fluid to be supplied to the holding device on the basis of detection by the detecting device.

    30.
    发明专利
    未知

    公开(公告)号：DE69322345T2

    公开(公告)日：1999-05-20

    申请号：DE69322345

    申请日：1993-09-13

    Applicant: CANON KK

    Inventor： AMEMIYA MITSUAKI ,  FUKUDA YASUAKI ,  WATANABE YUTAKA ,  MIYAKE AKIRA

    IPC: B29C35/08 ,  G03F7/20

    Abstract: An exposure method using X-rays from synchrotron radiation source including determining a relationship between an X-ray intensity distribution and exposure amount distribution in an exposure area; and effecting exposure operation while controlling a dose amount for respective positions in the exposure area using the relationship, wherein the dose amount is controlled by changing a driving profile of a movable shutter (7) for controlling the exposure operation, and wherein the relationship is in the form of a proportional coefficient between an X-ray intensity and the exposure amount as a function of position information in the exposure area.

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