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公开(公告)号：US20180233631A1
公开(公告)日：2018-08-16
申请号：US15948738
申请日：2018-04-09
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
IPC: H01L33/46
CPC classification number: H01L33/46 , H01L33/38 , H01L33/382 , H01L33/405
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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公开(公告)号：US20170331007A1
公开(公告)日：2017-11-16
申请号：US15669613
申请日：2017-08-04
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Tsung-Hsun CHIANG , Chien-Chih LIAO , Wen-Hung CHUANG , Min-Yen TSAI , Bo-Jiun HU
Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, an active layer, and a second semiconductor layer; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on the semiconductor light-emitting stack; wherein in a top view, the cushion part is disposed in a center region of the light-emitting element.
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公开(公告)号：US20170040493A1
公开(公告)日：2017-02-09
申请号：US15271632
申请日：2016-09-21
Applicant: EPISTAR CORPORATION
Inventor： Jia-Kuen WANG , Chien-Fu SHEN , Hung-Che CHEN , Chao-Hsing CHEN
CPC classification number: H01L33/38 , H01L33/0095 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/405 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer arranged above the semiconductor stack and having a first major plane and a first boundary with a first gradually reduced thickness, and a second metal layer arranged above the first metal layer and having a second major plane and a second boundary with a second gradually reduced thickness, wherein the second major plane parallels to the first major plane and the second boundary exceeds the first boundary, wherein a first angle formed between the first boundary and the semiconductor stack, and/or a second angle formed between the second boundary and the semiconductor stack, is/are less than 10°.
Abstract translation: 光电子器件包括半导体叠层，第一金属层，其布置在半导体堆叠之上并且具有第一主平面和具有第一逐渐减小厚度的第一边界，以及布置在第一金属层上方并具有第二主体的第二金属层 平面和具有第二逐渐减小的厚度的第二边界，其中所述第二主平面平行于所述第一主平面，并且所述第二边界超过所述第一边界，其中在所述第一边界和所述半导体叠层之间形成的第一角，和/ 在第二边界和半导体堆叠之间形成的第二角度小于10°。
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公开(公告)号：US20150357371A1
公开(公告)日：2015-12-10
申请号：US14829262
申请日：2015-08-18
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Schang-Jing HON , Alexander Chan WANG , Li-Tian LIANG , Chin-Yung FAN , Chien-Kai CHUNG , Min-Hsun HSIEH
CPC classification number: H01L27/15 , H01L25/0753 , H01L27/153 , H01L27/156 , H01L27/3211 , H01L33/50 , H01L33/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/8592 , H01L2924/12032 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device includes a growth substrate, a plurality of light-emitting diode units formed on the growth substrate and arranged in a closed loop, an electrode directly formed on the growth substrate, an electrical connection structure formed on the growth substrate and connecting the plurality of light-emitting diode units with the electrode, and a plurality of rectifying diodes connecting to respective nodes of the closed loop.
Abstract translation: 发光器件包括生长衬底，形成在生长衬底上并且以闭环布置的多个发光二极管单元，直接形成在生长衬底上的电极，形成在生长衬底上的电连接结构和连接 多个具有电极的发光二极管单元和连接到闭环的相应节点的多个整流二极管。
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公开(公告)号：US20150249192A1
公开(公告)日：2015-09-03
申请号：US14714564
申请日：2015-05-18
Applicant: Epistar Corporation
Inventor： Chao-Hsing CHEN
CPC classification number: H01L33/486 , H01L33/48 , H01L33/483 , H01L33/501 , H01L33/505 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/12044 , H01L2933/0058 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element.
Abstract translation: 一种制造发光器件的方法包括在第一载体上形成第一光学元件，其中第一光学元件包括开口; 在开口中形成发光元件; 在所述第一光学元件上形成第二载体; 在第一光学元件上形成第二载体之后移除第一载体; 以及在所述第一光学元件下形成导电结构。
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Patent Agency Ranking
公开(公告)号：US20150194574A1
公开(公告)日：2015-07-09
申请号：US14591772
申请日：2015-01-07
Applicant: EPISTAR CORPORATION
Inventor： Jia-Kuen WANG , Chao-Hsing CHEN
CPC classification number: H01L33/382 , F21K9/232 , F21V23/06 , F21Y2115/10 , H01L25/0753 , H01L33/0062 , H01L33/007 , H01L33/0075 , H01L33/0083 , H01L33/0095 , H01L33/36 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic device comprises a semiconductor stack, wherein the semiconductor stack comprises a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer; an electrode formed on the second semiconductor layer, wherein the first electrode further comprises a reflective layer; and an insulative layer formed on the second semiconductor layer, and a space formed between the first electrode and the insulative layer.
Abstract translation: 光电器件包括半导体堆叠，其中半导体堆叠包括第一半导体层，形成在第一半导体层上的有源层和形成在有源层上的第二半导体层; 形成在所述第二半导体层上的电极，其中所述第一电极还包括反射层; 以及形成在所述第二半导体层上的绝缘层以及形成在所述第一电极和所述绝缘层之间的空间。
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公开(公告)号：US20150129869A1
公开(公告)日：2015-05-14
申请号：US14537058
申请日：2014-11-10
Applicant: EPISTAR CORPORATION
Inventor： Jia-Kuen WANG , Chien-Fu SHEN , Hung-Che CHEN , Chao-Hsing CHEN
CPC classification number: H01L33/38 , H01L33/0095 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/405 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
Abstract: An optoelectronic device comprises a semiconductor stack, a first metal layer formed above the semiconductor stack, wherein the first metal layer comprises a first major plane and a first boundary with a gradually reduced thickness, and a second metal layer formed above the first metal layer, wherein the second metal layer comprise a second major plane paralleling to the first major plane and a second boundary with a gradually reduced thickness, and the second boundary of the second metal layer exceeds the first boundary of the first metal layer.
Abstract translation: 光电子器件包括半导体叠层，形成在半导体叠层之上的第一金属层，其中第一金属层包括第一主平面和逐渐减小厚度的第一边界，以及形成在第一金属层之上的第二金属层， 其中所述第二金属层包括与所述第一主平面平行的第二主平面和具有逐渐减小的厚度的第二边界，并且所述第二金属层的第二边界超过所述第一金属层的第一边界。
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公开(公告)号：US20250126936A1
公开(公告)日：2025-04-17
申请号：US18984418
申请日：2024-12-17
Applicant: EPISTAR CORPORATION
Inventor： Jhih-Yong YANG , Hsin-Ying WANG , De-Shan KUO , Chao-Hsing CHEN , Yi-Hung LIN , Meng-Hsiang HONG , Kuo-Ching HUNG , Cheng-Lin LU
IPC: H10H20/841 , H10H20/814 , H10H20/831 , H10H20/857 , H10H29/14
Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes an upper surface; a plurality of exposed regions, formed in the semiconductor stack and exposing the upper surface; a lower protective layer, covering the exposed regions and the second semiconductor layer; a first reflective structure, formed on the second semiconductor layer and including a plurality of first openings on the second semiconductor layer; a second reflective structure, formed on the first reflective structure and electrically connected to the second semiconductor layer through the plurality of first openings; and an upper protective layer, formed on the second reflective structure; wherein the upper protective layer contacts and overlaps the lower protective layer on the exposed regions; wherein the first reflective structure and the second reflective structure are disposed between the lower protective layer and the upper protective layer.
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公开(公告)号：US20240421249A1
公开(公告)日：2024-12-19
申请号：US18740925
申请日：2024-06-12
Applicant: EPISTAR CORPORATION
Inventor： Meng-Hsiang HONG , Yu-Ling LIN , Chao-Hsing CHEN , Chen OU , Chien-Ya HUNG
Abstract: A light-emitting device comprises a first semiconductor layer; a semiconductor mesa, comprising an active layer and a second semiconductor layer and comprising an inclined surface; a contact electrode covering the second semiconductor layer and comprising a first side surface; an insulating reflective structure covering the contact electrode and comprising a plurality of insulating reflective structure openings; a connection layer covering the insulating reflective structure and filling into the plurality of insulating reflective structure openings, and comprising a second side surface; and a metal reflective layer covering the connection layer and filling into the plurality of insulating reflective structure openings, and comprising a third side surface; wherein in a cross-sectional view of the light-emitting device, a first pitch is between the first side surface and the inclined surface, a third pitch is between the third side surface and the inclined surface, and the third pitch is smaller than the first pitch.
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公开(公告)号：US20240372053A1
公开(公告)日：2024-11-07
申请号：US18654733
申请日：2024-05-03
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Jhih-Yong YANG , Chien-Chih LIAO , Chao-Hsing CHEN , Jheng-Long HUANG , Ching-Hsing SHEN , Hui-Fang KAO
Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer and a plurality of mesas spaced apart from each other on the first semiconductor layer, wherein the plurality of mesas each includes a second semiconductor layer, the first semiconductor layer and the second semiconductor layer have different conductivity types; a contact metal formed on the semiconductor stack, including a plurality of first contact parts located between the mesas and electrically connected to the first semiconductor layer, and a plurality of second contact parts located on the mesas and electrically connected to the second semiconductor layer; a first insulating structure formed on the contact metal, including a plurality of first openings corresponding to the first contact parts and a plurality of second openings corresponding to the second contact parts; a current spreading electrode formed on the first insulating structure, including a first current spreader and a plurality of second current spreaders, wherein the first current spreader is located between the mesas and filled in the first openings to connect the first contact parts and the second current spreaders are formed on the mesas and filled in the second openings to connect the second contact parts; a second insulating structure formed on the current spreading electrode, including a third opening on the first current spreader and a plurality of fourth openings formed on the second current spreaders; and an electrode pad structure formed on the second insulating structure, including at least one first electrode pad filled in the third opening to connect to the first current spreader, and a plurality of second electrode pads filled in the fourth openings to connect the second current spreaders.
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