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    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    21.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20150108494A1

    公开(公告)日：2015-04-23

    申请号：US14520067

    申请日：2014-10-21

    Applicant: EPISTAR CORPORATION

    Inventor： Wen-Luh LIAO ,  Chih-Chiang LU ,  Shih-Chang LEE ,  Hung-Ta CHENG ,  Hsin-Chan CHUNG ,  Yi-Chieh LIN

    IPC: H01L33/00 ,  H01L33/42 ,  H01L33/30

    CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/0079 ,  H01L2933/0091

    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

    Abstract translation: 本发明提供一种发光装置及其制造方法。 该发光装置包括：发光叠层; 以及半导体层，其具有连接到所述发光叠层的第一表面，与所述第一表面相对的第二表面和空隙; 其中所述空隙包括靠近所述第一表面的底部部分和所述第二表面上的开口，并且所述底部部分的尺寸大于所述开口的尺寸。

    OPTOELECTRONIC SEMICONDUCTOR DEVICE WITH BARRIER LAYER
    22.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR DEVICE WITH BARRIER LAYER 有权
    带有障碍层的光电子半导体器件

    公开(公告)号：US20150060877A1

    公开(公告)日：2015-03-05

    申请号：US14475210

    申请日：2014-09-02

    Applicant: EPISTAR CORPORATION

    Inventor： Tsung-Hsien LIU ,  Rong-Ren LEE ,  Shih-Chang LEE

    IPC: H01L33/08 ,  H01L33/06 ,  H01L33/30

    CPC classification number: H01L33/08 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/305

    Abstract: An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and the concentration of the second dopant in the second semiconductor layer is larger than that in the first semiconductor layer.

    Abstract translation: 光电子半导体器件包括阻挡层，阻挡层上的第一半导体层，包含第一掺杂剂和第二掺杂剂的第一半导体层，以及阻挡层下面的第二半导体层，第二半导体包括第二掺杂剂，其中 在第一半导体层中，第一掺杂剂的浓度大于第二掺杂剂的浓度，第二半导体层中的第二掺杂剂的浓度大于第一半导体层中的浓度。

    SEMICONDUCTOR DEVICE
    23.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250006862A1

    公开(公告)日：2025-01-02

    申请号：US18756730

    申请日：2024-06-27

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Chieh LIN ,  Shih-Chang LEE ,  Kuo-Feng HUANG ,  Shih-Hao CHENG

    IPC: H01L33/06 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/0304 ,  H01L31/0352 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01S5/343

    Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The active region is located between the first semiconductor structure and the second semiconductor structure. The active region includes a light-emitting region having N pair(s) of semiconductor stack(s). Each of the semiconductor stack includes a well layer and a barrier layer, in which N is a positive integer greater than or equal to 1. The well layer includes a first group III-V semiconductor material including indium with a first percentage of indium content. The barrier layer includes a second group III-V semiconductor material including indium with a second percentage of indium content. The first group III-V semiconductor material and the second group III-V semiconductor material further includes phosphorus. The second percentage of indium content is less than the first percentage of indium content.

    SEMICONDUCTOR DEVICE
    24.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240079524A1

    公开(公告)日：2024-03-07

    申请号：US18242758

    申请日：2023-09-06

    Applicant: EPISTAR CORPORATION

    Inventor： Wei-Jen HSUEH ,  Shih-Chang LEE ,  Kuo-Feng HUANG ,  Wen-Luh LIAO ,  Jiong-Chaso SU ,  Yi-Chieh LIN ,  Hsuan-Le LIN

    IPC: H01L33/30 ,  H01L33/04

    CPC classification number: H01L33/30 ,  H01L33/04

    Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING COMPONENT
    25.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING COMPONENT 有权

    公开(公告)号：US20210305456A1

    公开(公告)日：2021-09-30

    申请号：US17211331

    申请日：2021-03-24

    Applicant: EPISTAR CORPORATION

    Inventor： Jian-Zhi CHEN ,  Yen-Chun TSENG ,  Hui-Fang KAO ,  Yao-Ning CHAN ,  Yi-Tang LAI ,  Yun-Chung CHOU ,  Shih-Chang LEE ,  Chen OU

    IPC: H01L33/36 ,  H01L33/20 ,  H01L33/38 ,  H01L25/075

    Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

    SEMICONDUCTOR DEVICE
    29.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250112443A1

    公开(公告)日：2025-04-03

    申请号：US18899846

    申请日：2024-09-27

    Applicant: Epistar Corporation

    Inventor： Po-Chou PAN ,  Chen OU ,  Shih-Chang LEE ,  Wei-Chih PENG ,  Yao-Ru CHANG ,  Hao-Chun LIANG

    IPC: H01S5/11 ,  H01S5/042

    Abstract: An embodiment of the present disclosure provides a semiconductor device. The semiconductor device has a first semiconductor structure; a second semiconductor structure on the first semiconductor structure and having a first aluminum content; a plurality of voids in the second semiconductor structure; an active structure between the first semiconductor structure and the second semiconductor structure; and a third semiconductor structure between the active structure and the second semiconductor structure, and having a second aluminum content. The first aluminum content is greater than the second aluminum content.

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