-
公开(公告)号：US20140225138A1
公开(公告)日：2014-08-14
申请号：US14174036
申请日：2014-02-06
Applicant: Epistar Corporation
Inventor： Tsung-Hsien YANG , Tzu-Chieh HSU , Yi-Ming CHEN , Yi-Tang LAI , Jhih-Jheng YANG , Chih-Wei WEI , Ching-Sheng CHEN , Shih-I CHEN , Chia-Liang HSU , Ye-Ming HSU
IPC: H01L33/22
CPC classification number: H01L33/02 , H01L33/0079
Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.
Abstract translation: 公开了一种发光器件，包括：透明衬底; 在所述透明基板上的半导体发光层，其中，所述半导体发光层包括靠近所述透明基板的第一半导体层，远离所述透明基板的第二半导体层，以及能够发光的发光层 设置在第一半导体层和第二半导体层之间; 以及在所述透明基板和所述半导体发光叠层之间的接合层，其中所述接合层具有逐渐变化的折射率，并且所述接合层处的临界角和从所述发光层发射的光的所述透明基板 朝向透明基板大于35度。
-
公开(公告)号：US20180331256A1
公开(公告)日：2018-11-15
申请号：US15971367
申请日：2018-05-04
Applicant: EPISTAR CORPORATION
Inventor： Tzu-Chieh HSU , Yi-Wen HUANG , Shou-Lung CHEN , Hsin-Kang CHEN
CPC classification number: H01L33/10 , H01L33/20 , H01L33/385 , H01L33/60 , H01L33/62 , H01S5/0216 , H01S5/0217 , H01S5/0425 , H01S5/18305 , H01S5/18311 , H01S5/423 , H01S2301/176
Abstract: The present disclosure provides a semiconductor device including a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface, a second surface opposite to the first surface and a sidewall between the first surface and the second surface. The first surface is closer to the first reflective structure than the second reflective structure. The semiconductor device further includes a first electrode electrically connected to the first reflective structure. The semiconductor device further includes a second electrode electrically connected to the second reflective structure. The second electrode includes a pad portion and a side portion extending from the pad portion. The first electrode and the pad portion of the second electrode are on the first surface, and the side portion of the second electrode covers the sidewall of the cavity region.
-
公开(公告)号：US20180287031A1
公开(公告)日：2018-10-04
申请号：US16001676
申请日：2018-06-06
Applicant: EPISTAR CORPORATION
Inventor： Shih-I CHEN , Chia-Liang HSU , Tzu-Chieh HSU , Han-Min WU , Ye-Ming HSU , Chien-Fu HUANG , Chao-Hsing CHEN , Chiu-Lin YAO , Hsin-Mao LIU , Chien-Kai CHUNG
IPC: H01L33/62 , H01L33/60 , H01L27/15 , H01L33/08 , H01L33/10 , H01L25/075 , H01L33/48 , H01L33/46 , H01L33/44 , H01L33/42 , H01L33/38 , H01L33/14 , H01L33/40 , H01L33/32
Abstract: A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.
-
公开(公告)号：US20180012929A1
公开(公告)日：2018-01-11
申请号：US15711737
申请日：2017-09-21
Applicant: Epistar Corporation
Inventor： Shao-Ping LU , Yi-Ming CHEN , Yu-Ren PENG , Chun-Yu LIN , Chun-Fu TSAI , Tzu-Chieh HSU
CPC classification number: H01L27/153 , H01L33/005 , H01L33/08
Abstract: A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.
-
Patent Agency Ranking
公开(公告)号：US20160013383A1
公开(公告)日：2016-01-14
申请号：US14796654
申请日：2015-07-10
Applicant: EPISTAR CORPORATION
Inventor： Chien-Ming WU , Rong-Ren LEE , Tzu-Chieh HSU , Ming-Nam CHANG
Abstract: A light-emitting device comprising a substrate; a semiconductor stack capable of emitting a light; a first reflecting structure between the substrate and the semiconductor stack to reflect the light; and a second reflecting structure between the substrate and the semiconductor stack, wherein the first reflecting structure has a maximum reflectivity when the light is incident to the first reflecting structure at a first incident angle, the second reflecting structure has a maximum reflectivity when the light is incident to the second reflecting structure at a second incident angle.
Abstract translation: 1.一种发光器件，包括：衬底; 能够发光的半导体堆叠; 在基板和半导体叠层之间的第一反射结构以反射光; 以及在所述基板和所述半导体堆叠之间的第二反射结构，其中当所述光以第一入射角入射到所述第一反射结构时，所述第一反射结构具有最大反射率，所述第二反射结构在所述光为 以第二入射角入射到第二反射结构。
-
公开(公告)号：US20150380604A1
公开(公告)日：2015-12-31
申请号：US14852212
申请日：2015-09-11
Applicant: EPISTAR CORPORATION
Inventor： Shih-I CHEN , Chia-Liang HSU , Chien-Fu HUANG , Tzu-Chieh HSU
Abstract: An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*1016 cm−3.
Abstract translation: 光电子器件包括用于在光电子系统上发射光和半导体层的光电子系统，其中半导体层包括Ag的金属元素，并且半导体层中的Ag的原子浓度大于1×1016cm-3。
-
公开(公告)号：US20150194586A1
公开(公告)日：2015-07-09
申请号：US14663544
申请日：2015-03-20
Applicant: Epistar Corporation
Inventor： Shih-I CHEN , Chia-Liang HSU , Tzu-Chieh HSU , Han-Min WU , Ye-Ming HSU , Chien-Fu HUANG , Chao-Hsing CHEN , Chiu-Lin YAO , Hsin-Mao LIU , Chien-Kai CHUNG
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.
Abstract translation: 公开了一种发光器件。 发光装置包括支撑基板; 第一发光元件和第二发光元件，其中所述第一发光元件包括在所述支撑基板上的透明层，所述透明层上的第一发光层叠层，以及多个 透明层与第一发光层叠层之间的接触部分; 并且所述第二发光元件包括在所述电极和所述支撑衬底之间的电极和第二发光层叠层; 以及在所述支撑基板上的金属线，并且电连接所述电极和所述接触部分之一。
-
公开(公告)号：US20150060924A1
公开(公告)日：2015-03-05
申请号：US14489169
申请日：2014-09-17
Applicant: EPISTAR CORPORATION
Inventor： Kun-De LIN , Yao-Ning CHAN , Yi-Ming CHEN , Tzu-Chieh HSU
Abstract: An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion.
Abstract translation: 光电子器件包括具有第一表面的半导体堆叠，在第一表面上具有欧姆接触半导体叠层的第一图案的接触层，半导体叠层中的空隙和围绕接触层的第一表面的反射镜结构 并且覆盖所述接触层，其中所述第一表面具有未被所述接触层覆盖的第一部分和被所述接触层覆盖的第二部分，并且所述第一部分比所述第二部分更粗糙。
-
公开(公告)号：US20130221391A1
公开(公告)日：2013-08-29
申请号：US13862022
申请日：2013-04-12
Applicant: EPISTAR CORPORATION
Inventor： Tzu-Chieh HSU
IPC: H01L33/22
CPC classification number: H01L33/22 , H01L21/6835 , H01L24/29 , H01L24/48 , H01L24/97 , H01L33/0079 , H01L33/20 , H01L2221/68359 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2224/45099 , H01L2924/00
Abstract: A light emitting device comprising: a substrate, wherein the substrate comprising a first major surface, a second major surface opposite to the first major surface, and a sidewall wherein at least partial of the sidewall is a substantially textured surface with a depth of 10˜150 μm; and a light emitting stack layer formed on the substrate.
Abstract translation: 1.一种发光器件，包括：衬底，其中所述衬底包括第一主表面，与所述第一主表面相对的第二主表面，以及侧壁，其中所述侧壁的至少部分是具有10〜 150个妈妈 以及形成在基板上的发光层叠层。
-
-
-
-
-
-
-
-
Search Results
29
records
(took 0.029 seconds)
