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    Light-emitting device
    22.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11600749B2

    公开(公告)日：2023-03-07

    申请号：US16003866

    申请日：2018-06-08

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I Chen ,  Wei-Yu Chen ,  Yi-Ming Chen ,  Ching-Pei Lin ,  Tsung-Xian Lee

    IPC: H01L33/42 ,  H01L33/38

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

    Semiconductor light-emitting device
    23.
    发明授权
    Semiconductor light-emitting device 有权

    公开(公告)号：US10998468B2

    公开(公告)日：2021-05-04

    申请号：US16161966

    申请日：2018-10-16

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Ming Chen ,  Tsung-Hsien Yang

    IPC: H01L33/38 ,  H01L33/20 ,  H01L33/62 ,  H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/48

    Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

    Light-emitting device
    24.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10892380B2

    公开(公告)日：2021-01-12

    申请号：US16673312

    申请日：2019-11-04

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Ming Chen ,  Hao-Min Ku ,  Chih-Chiang Lu ,  Tzu-Chieh Hsu

    IPC: H01L33/10 ,  H01L33/40 ,  H01L33/38

    Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
    29.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
    半导体发光装置及其制造方法

    公开(公告)号：US20160204305A1

    公开(公告)日：2016-07-14

    申请号：US14442319

    申请日：2013-07-03

    Applicant: EPISTAR CORPORATION

    Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

    IPC: H01L33/00 ,  H01L33/38 ,  H01L33/62 ,  H01L33/46

    CPC classification number: H01L33/0025 ,  H01L21/00 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.

    Abstract translation: 一种制造半导体发光器件的方法，包括以下步骤：提供第一衬底; 在所述第一衬底上提供多个外延单元，​​其中所述多个外延单元包括：多个第一外延单元，​​其中所述第一外延单元中的每一个具有第一几何形状和第一区域; 和多个第二外延单元，​​其中每个第二外延单元具有第二几何形状和第二区域; 提供具有表面的第二基底; 将所述多个第二外延单元转移到所述第二基板的表面; 并且分割所述第一基板以形成多个第一半导体发光器件，其中所述第一半导体发光器件中的每一个具有所述第一外延单元; 其中所述第一几何形状与所述第二几何形状不同，或者所述第一区域不同于所述第二区域。

    Lighting emitting device with aligned-bonding having alignment patterns
    30.
    发明授权
    Lighting emitting device with aligned-bonding having alignment patterns 有权
    具有对准接合的照明发光器件具有对准图案

    公开(公告)号：US09269859B2

    公开(公告)日：2016-02-23

    申请号：US13784291

    申请日：2013-03-04

    Applicant: EPISTAR CORPORATION

    Inventor： Chia-Liang Hsu ,  Yi-Ming Chen ,  Hsin-Chih Chiu

    IPC: H01L33/02 ,  B65G47/24 ,  H01L33/00 ,  H01L21/67 ,  H01L21/68 ,  H01L33/64

    CPC classification number: H01L33/62 ,  B65G47/24 ,  H01L21/67092 ,  H01L21/68 ,  H01L21/681 ,  H01L22/26 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/32 ,  H01L33/46 ,  H01L33/641

    Abstract: A light-emitting device comprises a semiconductor light-emitting stacked layer having a first connecting surface, wherein the semiconductor light-emitting stacked layer comprises a first alignment pattern on the first connecting surface, and a substrate under the semiconductor light-emitting stacked layer, wherein the substrate has a second connecting surface being operable for connecting with the first connecting surface, wherein the substrate comprises a second alignment pattern on the second connecting surface, and the second alignment pattern is corresponding to the first alignment pattern.

    Abstract translation: 发光器件包括具有第一连接表面的半导体发光层叠层，其中所述半导体发光层叠层包括在所述第一连接表面上的第一取向图案和所述半导体发光层叠层下的衬底， 其中所述基底具有可操作以与所述第一连接表面连接的第二连接表面，其中所述基底在所述第二连接表面上包括第二对准图案，并且所述第二对准图案对应于所述第一对准图案。

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