公开(公告)号：GB2497379A

公开(公告)日：2013-06-12

申请号：GB201214521

申请日：2012-08-15

Applicant: IBM

Inventor： GROGG DANIEL ,  DESPONT MICHEL ,  KNOLL ARMIN W

IPC: H01H1/00

Abstract: A nano-electromechanical switch 1 comprises a curved cantilever beam 5 that flexes in response to an activation voltage applied between the beam and an actuator electrode 2 to close an electrical contact between the beam 5 and an output electrode 4. Before, during and after flexing of said curved cantilever beam 5 a remaining gap gR between the curved cantilever beam 5 and the actuator electrode 2 is substantially uniform. Beam 5 may rotate around a point of rotation POR when flexing and a motion direction angel b between a direction of motion DOM around the rotation point POR and a surface of the beam facing the actuator electrode can be designed such that after rotation the remaining gap is substantially uniform. The direction of motion angle b may be constant. A flexible hinge 5a may connect be the beam with an input electrode 3 and be less stiff than the main body of the beam. An initial gap g0 may be constant and formed by removal of a sacrificial layer during fabrication of the switch.

公开(公告)号：DE60131558T2

公开(公告)日：2008-09-25

申请号：DE60131558

申请日：2001-09-17

Applicant: IBM

Inventor： BINNIG GERD K ,  DESPONT MICHEL ,  VETTIGER PETER

IPC: G11B9/00 ,  G01B7/34 ,  G01Q20/04 ,  G01Q60/38 ,  G01Q80/00 ,  G11B9/14 ,  G11B11/03

Abstract: Read/write components for AFM-based data storage devices are provided. In particular embodiments, a read/write component (30, 45, 50, 65, 80) comprises lever means (31, 51, 66, 82) and a support structure (32, 52, 67, 81), the lever means being connected to the support structure for substantially pivotal movement. The lever means (31, 51, 66, 82) provides first and second current paths between a pair of electrical supply lines (R, C) on the support structure via which the lever means can be connected in use to power supply means operable in a write mode and a read mode. A write-mode heater (36, 47, 56, 73) is provided on the lever means in the first current path, and a read/write tip (37, 57, 74, 84) is provided on the write-mode heater. A read-mode heater (39, 46, 58, 75, 83) is provided on the lever means in the second current path. Decoupling means (38a, 38b, 40a, 40b, 60, 61, 77a, 77b, 78a, 78b) is arranged to inhibit current flow to the write-mode heater via the first current path in use when the power supply means is operated in the read mode. The component, with separate write and read-mode heaters, can thus be addressed in both the write and read modes via a single pair of supply lines. Other embodiments provide read/write components (100) employing a thermal decoupling mechanism, and read/write components (80) where read-sensing is performed by a proximity sensing arrangement between the lever means and the support structure. Sensing apparatus (115) for atomic force microscopes is also provided where tip movement can be detected via similar proximity sensing arrangements.

公开(公告)号：DE60131558D1

公开(公告)日：2008-01-03

申请号：DE60131558

申请日：2001-09-17

Applicant: IBM

Inventor： BINNIG GERD K ,  DESPONT MICHEL ,  VETTIGER PETER

IPC: G11B9/00 ,  G01B7/34 ,  G01Q20/04 ,  G01Q60/38 ,  G01Q80/00 ,  G11B9/14 ,  G11B11/03

Abstract: Read/write components for AFM-based data storage devices are provided. In particular embodiments, a read/write component (30, 45, 50, 65, 80) comprises lever means (31, 51, 66, 82) and a support structure (32, 52, 67, 81), the lever means being connected to the support structure for substantially pivotal movement. The lever means (31, 51, 66, 82) provides first and second current paths between a pair of electrical supply lines (R, C) on the support structure via which the lever means can be connected in use to power supply means operable in a write mode and a read mode. A write-mode heater (36, 47, 56, 73) is provided on the lever means in the first current path, and a read/write tip (37, 57, 74, 84) is provided on the write-mode heater. A read-mode heater (39, 46, 58, 75, 83) is provided on the lever means in the second current path. Decoupling means (38a, 38b, 40a, 40b, 60, 61, 77a, 77b, 78a, 78b) is arranged to inhibit current flow to the write-mode heater via the first current path in use when the power supply means is operated in the read mode. The component, with separate write and read-mode heaters, can thus be addressed in both the write and read modes via a single pair of supply lines. Other embodiments provide read/write components (100) employing a thermal decoupling mechanism, and read/write components (80) where read-sensing is performed by a proximity sensing arrangement between the lever means and the support structure. Sensing apparatus (115) for atomic force microscopes is also provided where tip movement can be detected via similar proximity sensing arrangements.

公开(公告)号：CA2580441A1

公开(公告)日：2006-04-20

申请号：CA2580441

申请日：2005-09-29

Applicant: IBM

Inventor： DUERIG URS T ,  DESPONT MICHEL ,  GOTSMANN BERND W

IPC: B81B3/00

Abstract: A microsystem, comprising a first static element (1), a second, movable and unattached element (2), an actuator (3) for effecting a force between the first and the second element (1, 2), which actuator (3) is designed for controlling a temperature (T1, T2) of one of the first element (1) and the second element (2). A corresponding method for positioning a second element (2) with respect to a first element (1) in a microsystem is introduced.

公开(公告)号：DE69815781T2

公开(公告)日：2004-02-12

申请号：DE69815781

申请日：1998-09-30

Applicant: SEIKO INSTR INC ,  IBM

Inventor： TAKAHASHI HIROSHI ,  SHIMIZU MOBUHIRO ,  SHIRAKAWABE YOSHIHARU ,  DESPONT MICHEL

IPC: G01B21/30 ,  G01B7/16 ,  G01B7/34 ,  G01N37/00 ,  G01Q60/38 ,  H01L29/84 ,  G01N27/00 ,  G12B21/02

公开(公告)号：AU2002225276A1

公开(公告)日：2002-07-30

申请号：AU2002225276

申请日：2002-01-11

Applicant: IBM

Inventor： DRECHSLER UTE ,  DESPONT MICHEL ,  MAGNUSON ROY H

IPC: B81B3/00 ,  B81C1/00 ,  C23F13/14 ,  H01L21/306 ,  H01L21/308

Abstract: A method for protecting a material of a microstructure comprising the material and a noble metal layer against undesired galvanic etching during manufacture, the method comprises forming on the structure a sacrificial metal layer having a lower redox potential than the material, the sacrificial metal layer being electrically connected to the noble metal layer.

公开(公告)号：DE112011102203B4

公开(公告)日：2021-09-30

申请号：DE112011102203

申请日：2011-06-08

Applicant: IBM

Inventor： DESPONT MICHEL ,  HAGLEITNER CHRISTOPH ,  POZIDIS CHARALAMPOS ,  SEBASTIAN ABU

IPC: H01H59/00 ,  H01H47/00

Abstract: Elektromechanische Schaltereinheit (100, 200), aufweisend:einen ersten Schalterteil (111, 112, 211, 212), einen zweiten Schalterteil (121, 122, 220) und eine Aktoreinheit (130, 230),wobei die Aktoreinheit (130, 230) so ausgebildet ist, dass sie eine Betätigungskraft bereitstellt, wodurch sie den ersten und den zweiten Schalterteil (111, 112, 121, 122, 211, 212, 220) relativ zueinander betätigt, um von einem getrennten in einen verbundenen Zustand zu wechseln,wobei der erste Schalterteil (111, 112, 211, 212) eine Balkenstruktur (112, 212) mit einem auf der Balkenstruktur (112, 212) angeordneten Kontaktelement (111, 211) aufweist, wobei der zweite Schalterteil (121, 122, 220) mindestens ein weiteres auf einem Substrat (5) angeordnetes Kontaktelement (121, 122, 220) aufweist,wobei die Aktoreinheit (130, 230) ferner so ausgebildet ist, dass sie die Betätigungskraft, zumindest wenn sich der erste und der zweite Schalterteil (111, 112, 121, 122, 211, 212, 220) im verbundenen Zustand befinden, mit einer Modulation beaufschlagt undwobei die Betätigungskraft mit einer vordefinierten Schaltfrequenz intermittierend bereitgestellt wird und die vordefinierte Schaltfrequenz durch ein Taktsignal gesteuert wird.

公开(公告)号：GB2506410A

公开(公告)日：2014-04-02

申请号：GB201217389

申请日：2012-09-28

Applicant: IBM

Inventor： DELLMANN LAURENT A ,  DESPONT MICHEL ,  GROGG DANIEL ,  SEBASTIAN ABU

IPC: H01H1/00

Abstract: A nanoelectromechanical NEM switch comprises two electrodes 12, 18. At least one of the electrodes 18 has an active layer 10 thereon and one of the electrodes 12 is movable along a direction z, to a position where it contacts the other electrode 18 at a contact point P. The active layer exhibits a conductive pathway 16 which extends in direction z to enable conduction between the electrodes in position P and is confined to a region R1 of the active layer having nano-scale dimensions in a plane x, y perpendicular to direction z. The active layer on one electrode can comprise a protrusion (fig 8, 16p) in region R1 that protrudes towards the other electrode. The active layer can be resistive and the conductive path 16 extend through the layer in direction z in region R1,which can be contiguous with a surrounding region R2 having no conductive pathway. The properties of region R1 can be characteristic of a conditioning process comprising application of voltage or current pulses whilst the contacts are closed. The active layer can comprise several layers of materials including metallic layers and materials such as amorphous, diamond-like, hydrogenated or doped carbon; a phase-change material such as GeSbTe or GeTe or an oxide of Hf, W, Ta, Ti, Si or Zr.

公开(公告)号：GB2505467A

公开(公告)日：2014-03-05

申请号：GB201215513

申请日：2012-08-31

Applicant: IBM

Inventor： DESPONT MICHEL ,  GROGG DANIEL ,  HAGLEITNER CHRISTOPH ,  PU YU

IPC: H03K19/00 ,  H01H1/00

Abstract: The invention refers to a dynamic logic gate comprising a nano-electro-mechanical switch (NEMS), preferably a four-terminal NEM switch (4T-NEMS). The NEMS comprises a cantilever beam adapted to flex in response to an actuation voltage applied between the body and the gate of the device. The invention further refers to dynamic logic cascade circuits comprising such dynamic logic gates. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates. A NEMS allows zero leakage current when it is off so the pre-charged signal node in a dynamic logic gate can safely retain its charge, without the requirement for keeper transistors as in prior art CMOS dynamic logic circuits. The proposed NEMS adiabatic dynamic logic avoids both the leakage energy loss and the threshold voltage residue charge loss; it consumes only the adiabatic energy loss. As a result, an ultra-low energy loss close to zero is achieved.

公开(公告)号：DE112011102203T5

公开(公告)日：2013-06-27

申请号：DE112011102203

申请日：2011-06-08

Applicant: IBM

Inventor： HAGLEITNER CHRISTOPH ,  SEBASTIAN ABU ,  DESPONT MICHEL ,  POZIDIS CHARALAMPOS

IPC: H01H59/00 ,  H01H47/00

Abstract: Die Erfindung bezieht sich auf eine elektromechanische Schaltereinheit (100, 200), die einen ersten Schalterteil (111, 112, 211, 212), einen zweiten Schalterteil (121, 122, 220) und eine Aktoreinheit (130, 230) aufweist. Die Aktoreinheit (130, 230) ist so ausgebildet, dass sie eine Betätigungskraft bereitstellt, wodurch sie den ersten und den zweiten Schalterteil (111, 112, 121, 122, 211, 212, 220) relativ zueinander betätigt, um von einem getrennten in einen verbundenen Zustand zu wechseln. Die Aktoreinheit (130, 230) ist ferner so ausgebildet, dass sie die Betätigungskraft, zumindest wenn sich der erste und der zweite Schalterteil (111, 112, 121, 122, 211, 212, 220) im verbundenen Zustand befinden, mit einer Modulation beaufschlagt. Die Erfindung bezieht sich ferner auf ein Verfahren zum Betätigen einer elektromechanischen Schaltereinheit (100, 200).