公开(公告)号：DE10226235B4

公开(公告)日：2010-02-18

申请号：DE10226235

申请日：2002-06-13

Applicant: IBM ,  QIMONDA AG

Inventor： ECONOMIKOS LAERTIS ,  SIMPSON ALEXANDER

IPC: B24B57/02 ,  H01L21/3105 ,  B24B37/04 ,  B24B57/00 ,  C09K3/14 ,  H01L21/304 ,  H01L21/76

Abstract: The invention provides fixed-abrasive chemical-mechanical polishing processes which are effective in rapidly reducing thickness of oxide layers, especially siliceous oxides. The processes of the invention are preferably characterized by at least one step involving simultaneous use of a fixed-abrasive polishing element and an aqueous liquid medium containing an abrasive. Where the original oxide layer has topographic variation, the thickness reduction technique of the invention may be preceeded by topography reduction step using a fixed-abrasive and an aqueous medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide layer on the substrate.

公开(公告)号：AT445034T

公开(公告)日：2009-10-15

申请号：AT03783387

申请日：2003-11-14

Applicant: IBM

Inventor： ECONOMIKOS LAERTIS ,  DELIGIANNI HARIKLIA ,  COTTE JOHN ,  GRABARZ HENRY ,  CHEN BOMY

IPC: C25D5/22 ,  C25D5/48 ,  C25D7/12 ,  C25D17/00 ,  H01L21/288 ,  H01L21/321 ,  H01L21/768

Abstract: A method and apparatus are described for performing both electroplating of a metal layer and planarization of the layer on a substrate. Electroplating and electroetching of metal (such as copper) are performed in a repeated sequence, followed by chemical-mechanical polishing. An electroplating solution, electroetching solution, and a non-abrasive slurry are dispensed on a polishing pad in the respective process steps. The substrate is held against the pad with a variable force in accordance with the process, so that the spacing between substrate and pad may be less during electroplating than during electroetching.

公开(公告)号：DE10354717B4

公开(公告)日：2006-09-14

申请号：DE10354717

申请日：2003-11-22

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： BEINTNER JOCHEN ,  ECONOMIKOS LAERTIS ,  KNORR ANDREAS ,  WISE MICHAEL L

IPC: H01L21/304 ,  H01L21/768 ,  H01L21/302 ,  H01L21/3105 ,  H01L21/461 ,  H01L21/8242

Abstract: CMP of integrated circuits containing DRAM arrays with trench capacitors fill the trenches with oxide, resulting in a an array of oxide structures that is dense compared with the concentration in the surrounding support structures and therefore has a higher loading. A conformal layer is deposited over the wafer, increasing the loading in the array, but filling in spaces between active areas. A blanket etch removes material in both the array and the supports. A block etch balances the amount of material in the array and the supports. A supplementary oxide deposition in the array fills spaces between the structures to a nearly uniform density.

公开(公告)号：AU2003290804A1

公开(公告)日：2004-06-15

申请号：AU2003290804

申请日：2003-11-14

Applicant: IBM

Inventor： ECONOMIKOS LAERTIS ,  DELIGIANNI HARIKLIA ,  COTTE JOHN M ,  GRABARZ HENRY J ,  CHEN BOMY

IPC: C25D5/48 ,  C25D7/12 ,  H01L21/288 ,  H01L21/321 ,  H01L21/768 ,  C25D5/22 ,  C25D17/00

Abstract: A method and apparatus are described for performing both electroplating of a metal layer and planarization of the layer on a substrate. Electroplating and electroetching of metal (such as copper) are performed in a repeated sequence, followed by chemical-mechanical polishing. An electroplating solution, electroetching solution, and a non-abrasive slurry are dispensed on a polishing pad in the respective process steps. The substrate is held against the pad with a variable force in accordance with the process, so that the spacing between substrate and pad may be less during electroplating than during electroetching.