Abstract:
A method and apparatus are described for performing both electroplating of a metal layer and CMP planarization of the layer on a substrate. The apparatus includes a table (10) supporting a polishing pad (20); the table and pad have a plurality of holes (210, 220) forming channels for dispensing an electroplating solution onto the pad. Electroplating anodes (201, 202, 203) are disposed in the channels and in contact with the electroplating solution. A carrier (12) holds the substrate (1) substantially parallel to the top surface of the pad (20) and applies variable mechanical force on the substrate against the pad, so that the spacing between substrate and pad may be less during electroplating than during electroetching.
Abstract:
PROBLEM TO BE SOLVED: To provide an inductor and a method of forming the inductor. SOLUTION: The method of forming the inductor comprises (a) a step for providing a semiconductor substrate, (b) a step for forming a dielectric layer on the surface of the substrate, (c) a step for forming a lower trench in the dielectric layer, (d) a step for forming a resist layer on the surface of the dielectric layer, (e) a step for forming an upper trench which is aligned to the lower trench and whose bottom is opened for the lower trench in the resist layer, and (f) a step for completely filling the lower trench with a conductor and at least partially filling the upper trench with the conductor to form the inductor. The semiconductor structure includes the inductor including the upper surface, bottom surface and sidewall and a means that allows the inductor to be electrically contacted, the lower section of the inductor is extended by a distance that the lower section of the inductor is fixed in the dielectric layer formed on the substrate, and the upper section thereof is extended on the dielectric layer. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
Methods and compositions for electro-chemical-mechanical polishing (e-CMP) of silicon chip interconnect materials, such as copper, are provided. The methods include the use of compositions according to the invention in combination with pads having various configurations.
Abstract:
PROBLEM TO BE SOLVED: To provide a method and device for removing a solid residual or a liquid residual, or both of them, from an electronic component such as a semiconductor wafer or the like. SOLUTION: The residual is solidified on the surface of the wafer by the use of liquid or a supercritical carbon dioxide, and then the residual is removed by vaporization from the system. In a favorable embodiment, after the solidifying step and the vaporizing step are repeated (cycled), the CO 2 is removed from a vessel. The residual is removed with the vaporizing carbon dioxide. COPYRIGHT: (C)2004,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an integrated plating and planarization apparatus having a counter electrode with a variable diameter. SOLUTION: The apparatus for plating and planarizing a metal on a substrate is provided with a plurality of distribution segments each of which has at least one hole for distributing an electroplating solution onto the substrate. The distribution segments form a circular counter electrode and is movable with respect to each other during an electroplating process so that the counter electrode may have a variable diameter. Thus, the electroplating solution is distributed onto the annular part of the substrate having a diameter corresponding to the diameter of the counter electrode. Therefore, the counter electrode can allow the local delivery of the plating solution onto the substrate. COPYRIGHT: (C)2004,JPO
Abstract:
Ein Filter umfasst eine Membran, welche mehrere darin ausgebildete Nanokanäle (14) aufweist. Ein erstes Oberflächenladungsmaterial (18) ist auf einen Endabschnitt der Nanokanäle aufgebracht. Das erste Oberflächenladungsmaterial umfasst eine Oberflächenladung, um Ionen in einer elektrolytischen Lösung (20) derart elektrostatisch zu beeinflussen, dass die Nanokanäle Ionen in die elektrolytische Lösung zurückweisen, während ein Fluid der elektrolytischen Lösung durchgelassen wird. Es werden auch Verfahren zur Herstellung und Verwendung des Filters bereitgestellt.
Abstract:
A method and apparatus are described for performing both electroplating of a metal layer and planarization of the layer on a substrate. Electroplating and electroetching of metal (such as copper) are performed in a repeated sequence, followed by chemical-mechanical polishing. An electroplating solution, electroetching solution, and a non-abrasive slurry are dispensed on a polishing pad in the respective process steps. The substrate is held against the pad with a variable force in accordance with the process, so that the spacing between substrate and pad may be less during electroplating than during electroetching.