中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

36 records (took 0.019 seconds)

    Thermostable positive resist image prodn. - using two layers contg. anthracite, coke tar, pitch and refractory clays
    23.
    发明专利
    Thermostable positive resist image prodn. - using two layers contg. anthracite, coke tar, pitch and refractory clays 未知

    公开(公告)号：DE2535423A1

    公开(公告)日：1976-04-15

    申请号：DE2535423

    申请日：1975-08-08

    Applicant: IBM

    Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

    IPC: G03F7/039 ,  G03F7/38 ,  G03C5/00 ,  G03F7/10

    Abstract: The prodn. of an image from a radiation-sensitive, thermostable, positive resist with high resolving power comprises (a) applying a polycarbonate film to a substrate; (b) exposing the film selectively; and (c) removing the degradation prods. from the exposed areas with a solvent. Exposure pref. is carried out with a low energy electron beam with an acceleration potential of 10-30 keV and a charge density of 3 x 10-6 to 1 C/cm2. A thin metal film can be deposited on the polycarbonate film after exposure and before development with the solvent. Used esp. in the prodn. of microcircuits of high density. Electron-sensitive resist materials are used which are stable up to 400 degrees C and give esp. good results in the metal lift-off process.

    24.
    发明专利
    未知

    公开(公告)号：FR2276610A1

    公开(公告)日：1976-01-23

    申请号：FR7516541

    申请日：1975-05-21

    Applicant: IBM

    Inventor： GIPSTEIN EDWARD ,  HEWET WILLIAM A

    IPC: H01L21/027 ,  C08G75/00 ,  C08G75/22 ,  G03F7/039 ,  G03C1/78 ,  G03F1/02

    Abstract: Electron beam positive resists are formed from terpolymers of (a) an alpha olefin, (b) sulfur dioxide, and (c) a compound selected from the group consisting of cyclopentene, bicycloheptene and methyl methacrylate. The terpolymers have the particular unexpected advantage of being resistant to cracking of the films.

    27.
    发明专利
    未知

    公开(公告)号：DE1917747A1

    公开(公告)日：1969-10-30

    申请号：DE1917747

    申请日：1969-04-05

    Applicant: IBM

    Inventor： GIPSTEIN EDWARD ,  AINSLIE HEWETT WILLIAM

    IPC: C08F24/00 ,  C08F26/06 ,  C08F28/06 ,  G03G5/07 ,  G03G

    Abstract: 1,269,385. Electrophotographic element. INTERNATIONAL BUSINESS MACHINES CORP. 8 April, 1969 [8 April, 1968], No. 17992/69. Heading H1K. [Also in Divisions C2 and C3] An electrophotographic element includes a polymeric material of the formula wherein n >40 or wherein one of R 1 and R 2 is hydrogen, the other is C 1-4 alkyl and n>10. The polymers may be applied to a substrate of aluminium glass, paper, or plastics as an organic solvent solution or by melting the polymers and applying in the liquid state. Activators or electron acceptors, which increase the photoconductivity of the polymers, may be incorporated into the polymers.

    RESIST PROCESS USING POLYSULFONE POLYMERS
    28.
    发明专利
    RESIST PROCESS USING POLYSULFONE POLYMERS 未知

    公开(公告)号：CA1286905C

    公开(公告)日：1991-07-30

    申请号：CA184354

    申请日：1973-10-26

    Applicant: IBM

    Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE M

    IPC: H05K3/06 ,  G03F7/039 ,  G03C1/73 ,  C08F128/02 ,  G03G13/044

    Abstract: RESIST PROCESS USING POLYSULFONE POLYMERS A resist mask is formed on a substrate by first forming a film of an olefin-sulfone polymer on the surface of the substrate and patterning the film to expose part of the surface. The patterning operation includes exposing portions of the film to degrading radiation. Background of the Invention This invention relates generally to the formation of resist masks and more particularly to the formation of positive resist masks of olefinsulfur dioxide polymers such as by electron beam exposure. The formation of etch resistant positive resist masks using radiation degradable polymers and copolymers is described, for example, in United States Patent 3,535,137. A layer of polymer is applied to a substrate and the portions of the layer to be removed are exposed to an electron beam or other radiation which acts to reduce the molecular weight of the polymer in the energy struck areas. The polymer in the energy struck areas is then selectively removed with a solvent developer solution which preferentially dissolves the lower molecular weight material leaving a patterned protective layer of polymer covering the unexposed areas. Such processes are especially suitable for use in the manufacture of high density, micro-miniaturized electronic integrated circuit structures because of the high resolution obtainable by the use of electron beam exposure. In order to decrease the time needed to form circuit structures using electron beam lithography, polymers having increased radiation sensitivity are desirable.

    30.
    发明专利
    未知

    公开(公告)号：FR2286419A1

    公开(公告)日：1976-04-23

    申请号：FR7525149

    申请日：1975-08-07

    Applicant: IBM

    Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE M ,  NEED OMAR U III

    IPC: G03F7/039 ,  G03F7/00

    Abstract: 1500403 Sensitized olefin-sulphone polymers INTERNATIONAL BUSINESS MACHINES CORP 21 May 1975 [26 Sept 1974] 21838/75 Addition to 1421805 Heading G2C A radiation sensitive positive resist comprises an olefin-sulphone polymer sensitized by a charge transfer agent or a free radical source. The polymer is preferably poly (hexene-1-sulphone) and sensitizers include azulene, 2, 4, 7-trinitrofluorenone, fluorene, diphenylamine, p-nitroaniline, CCl4, CBr4, Cl4, phenyl disulphide, azobenzene, and poly(alpha-chloromethylacrylate). The resist is degraded on exposure to U.V., visible light, x-rays, gamma radiation and low energy electron beams of from 10 to 30 KeV. The exposed areas of the polymer are removed using a solvent such as 1,4- dichlorobutane.

Patent Agency Ranking