公开(公告)号：DE112012001816T5

公开(公告)日：2014-01-30

申请号：DE112012001816

申请日：2012-03-14

Applicant: IBM

Inventor： STAMPER ANTHONY K ,  JAHNES CHRISTOPHER V

IPC: H02N1/00 ,  H05K13/00

Abstract: Es werden Strukturen mikroelektro-mechanischer Systeme (MEMS-Strukturen), Herstellungsverfahren und Entwurfsstrukturen bereitgestellt. Das Verfahren zum Bilden einer MEMS-Struktur schließt ein Bilden fester Aktuator-Elektroden (115) und eines Kontaktpunkts auf einem Substrat ein. Das Verfahren schließt außerdem ein Bilden eines MEMS-Balkens (100) über den festen Aktuator-Elektroden und dem Kontaktpunkt ein. Das Verfahren schließt außerdem ein Bilden eines Arrays von Aktuator-Elektroden (105') in Ausrichtung mit Abschnitten der festen Aktuator-Elektroden ein, die so groß und so dimensioniert sind, dass sie verhindern, dass der MEMS-Balken nach wiederholter periodischer Betätigung auf den festen Aktuator-Elektroden nachgibt. Das Array von Aktuator-Elektroden wird in direktem Kontakt mit mindestens einem von einer Unterseite des MEMS-Balkens und einer Oberfläche der festen Aktuator-Elektroden gebildet.

公开(公告)号：GB2494600A

公开(公告)日：2013-03-13

申请号：GB201300265

申请日：2011-06-08

Applicant: IBM

Inventor： DANG DINH ,  DOAN THAI ,  DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K ,  TWOMBLY JOHN G ,  WHITE ERIC J

IPC: B81B3/00 ,  B81C1/00 ,  H01H57/00

Abstract: Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60a, 60b) having a planar surface using a reverse damascene process.

公开(公告)号：DE69029024T2

公开(公告)日：1997-04-30

申请号：DE69029024

申请日：1990-08-29

Applicant: IBM

Inventor： BASEMAN ROBERT J ,  JAHNES CHRISTOPHER V ,  KHANDROS IGOR Y ,  MIRZAMAANI SEYYED M ,  RUSSAK MICHAEL A

IPC: G11B5/66 ,  G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  G11B5/82 ,  G11B5/84 ,  G11B5/704

Abstract: A magnetic storage medium is composed of a non-wettable substrate (10) upon which a transient liquid metal layer (18) is deposited and maintained as a distribution of discontinuous liquid features. A magnetic film layer (14) is deposited on the transient liquid metal layer (18) resulting in a reaction of the liquid metal with the magnetic film. The topology of the magnetic film is controllable by adjusting the thickness of the transient liquid metal layer (18).

公开(公告)号：CA2032866C

公开(公告)日：1994-09-06

申请号：CA2032866

申请日：1990-12-20

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  JONES FLETCHER ,  LOGAN JOSEPH S ,  RUSSAK MICHAEL A

IPC: G11B11/10 ,  G11B11/105 ,  G11B7/24 ,  C03C3/085 ,  H01G4/10 ,  H01G4/12 ,  G11B11/14

Abstract: A dielectric layer for use in a magneto-optic storage medium contains a compound glass of SiO2 -MO2, SiO2 - M2 O3, or SiO2 - M2 O5 and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.

公开(公告)号：CA2032866A1

公开(公告)日：1991-08-01

申请号：CA2032866

申请日：1990-12-20

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  JONES FLETCHER ,  LOGAN JOSEPH S ,  RUSSAK MICHAEL A

IPC: G11B11/10 ,  G11B11/105 ,  G11B11/14 ,  C03C3/085 ,  H01G4/10 ,  H01G4/12

Abstract: A dielectric layer (14, 18) for use in a magneto-optic storage medium contains a compound glass of SiO2 - MO2, SiO2 - M2O3 or SiO2 - M2O5 and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.

公开(公告)号：GB2505825B

公开(公告)日：2015-06-10

申请号：GB201322198

申请日：2012-06-01

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K

IPC: B81B3/00

公开(公告)号：GB2494600B

公开(公告)日：2015-02-25

申请号：GB201300265

申请日：2011-06-08

Applicant: IBM

Inventor： DANG DINH ,  DOAN THAI ,  DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K ,  TWOMBLY JOHN G ,  WHITE ERIC J

IPC: B81B3/00 ,  B81C1/00 ,  H01H57/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：GB2505825A

公开(公告)日：2014-03-12

申请号：GB201322198

申请日：2012-06-01

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K

IPC: B81B3/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming a wiring layer (14) on a substrate (10) comprising actuator electrodes (115) and a contact electrode (110). The method further includes forming a MEMS beam (100) above the wiring layer (14). The method further includes forming at least one spring (200) attached to at least one end of the MEMS beam (100). The method further includes forming an array of mini -bumps (105') between the wiring layer (14) and the MEMS beam (100).

公开(公告)号：GB2494359A

公开(公告)日：2013-03-06

申请号：GB201300085

申请日：2011-06-08

Applicant: IBM

Inventor： HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

IPC: B81C1/00 ,  H01H57/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60b) includes forming a first sacrificial cavity layer (18) over a wiring layer (14) and substrate (10). The method further includes forming an insulator layer (40) over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity (60b) of the MEMS.

公开(公告)号：DE60225484T2

公开(公告)日：2009-03-12

申请号：DE60225484

申请日：2002-08-26

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  LUND JENNIFER L ,  SAENGER KATHERINE L ,  VOLANT RICHARD P

IPC: B81B3/00 ,  H01H57/00 ,  B81C1/00 ,  G02B5/00 ,  G02B26/00 ,  G02B26/08 ,  H01H59/00

Abstract: A micro-electromechanical (MEM) RF switch provided with a deflectable membrane ( 60 ) activates a switch contact or plunger ( 40 ). The membrane incorporates interdigitated metal electrodes ( 70 ) which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane ( 60 ), and is used to mechanically displace the switch contact ( 30 ). An RF gap area ( 25 ) located within the cavity ( 250 ) is totally segregated from the gaps ( 71 ) between the interdigitated metal electrodes ( 70 ). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch. The micro-electromechanical switch includes: a cavity ( 250 ); at least one conductive path ( 20 ) integral to a first surface bordering the cavity; a flexible membrane ( 60 ) parallel to the first surface bordering the cavity ( 250 ), the flexible membrane ( 60 ) having a plurality of actuating electrodes ( 70 ); and a plunger ( 40 ) attached to the flexible membrane ( 60 ) in a direction away from the actuating electrodes ( 70 ), the plunger ( 40 ) having a conductive surface that makes electric contact with the conductive paths, opening and closing the switch.