公开(公告)号：EP1374314A4

公开(公告)日：2008-03-12

申请号：EP02725187

申请日：2002-03-13

Applicant: IBM

Inventor： ACOSTA RAUL E ,  CARASSO MELANIE L ,  CORDES STEVEN A ,  GROVES ROBERT A ,  LUND JENNIFER L ,  ROSNER JOANNA

IPC: H01F17/00 ,  H01F17/04 ,  H01F17/06 ,  H01F27/00 ,  H01F27/06 ,  H01F41/04 ,  H01L21/02 ,  H01L27/08 ,  H01L29/82 ,  H01L29/00

CPC classification number: H01L28/10 ,  H01F17/0006 ,  H01F17/0033 ,  H01F41/041 ,  H01L27/08

Abstract: A means for fabrication of solenoidal inductors interated in a semiconductor chip is provided. A solenoidal coil (50) is partially embedded in a deep well etched into the chip substrate (10). The non-embedded part (30) of the coil is fabricated as part of BEOL metallization layers (52). This allows for large cross-sectional area of the solenoid turns, tus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The farbication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric (14) followed by fabrication of the part of the coil (22) that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric (24 and 28) and planarization of the same by CMP. After planarization the fabrication of the remaining part (30) of the solenoidal coil is fabricated as part of the metallization in the BEOL (i.e. as line/vias of the BEOL). To further increase the cross section of the solenoidal coil, part of it may be built by electrodeposition through a mask on top of the BEOL layers.

Abstract translation: 提供了用于制造集成在半导体芯片中的螺线管电感器的装置。 螺线管线圈（50）部分地嵌入深蚀刻到芯片衬底（10）中的深井中。 线圈的非嵌入部分（30）被制造为BEOL金属化层（52）的一部分。 这允许电磁线圈的大横截面积，从而减小了匝间电容耦合。 由于本发明的螺线管线圈具有大直径横截面，因此线圈可以制成具有大电感值并且占用芯片的小面积。 在所有FEOL步骤完成之后，远程处理包括蚀刻衬底中的深腔; 用电介质（14）为所述空腔加衬里，随后制造将通过掩模沉积导电材料金属而嵌入的线圈（22）部分; 电介质（24和28）的沉积以及通过CMP对其进行平坦化。 在平面化之后，螺线管线圈的剩余部分（30）的制造被制造为BEOL中的金属化的一部分（即，BEOL的线路/通孔）。 为了进一步增加螺线管线圈的横截面，可以通过BEOL层上面的掩模通过电沉积来建立其一部分。

公开(公告)号：EP1535297A4

公开(公告)日：2007-07-18

申请号：EP02768707

申请日：2002-08-26

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  LUND JENNIFER L ,  SAENGER KATHERINE L ,  VOLANT RICHARD P

IPC: B81B3/00 ,  B81C1/00 ,  G02B5/00 ,  G02B26/00 ,  G02B26/08 ,  H01H57/00 ,  H01H59/00

CPC classification number: H01H59/0009 ,  H01H2057/006

Abstract: A micro-electromechanical (MEM) RF switch provided with a deflectable membrane (60) activates a switch contact or plunger (40). The membrane incorporates interdigitated metal electrodes (70) which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane (60), and is used to mechanically displace the switch contact (30). An RF gap area (25) located within the cavity (250) is totally segregated from the gaps (71) between the interdigitated metal electrodes (70). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch. The micro-electromechanical switch includes: a cavity (250); at least one conductive path (20) integral to a first surface bordering the cavity; a flexible membrane (60) parallel to the first surface bordering the cavity (250), the flexible membrane (60) having a plurality of actuating electrodes (70); and a plunger (40) attached to the flexible membrane (60) in a direction away from the actuating electrodes (70), the plunger (40) having a conductive surface that makes electric contact with the conductive paths, opening and closing the switch.

公开(公告)号：EP1535296A4

公开(公告)日：2007-04-04

申请号：EP02746591

申请日：2002-06-14

Applicant: IBM

Inventor： DELIGIANNI HARIKLIA ,  GREENBERG DAVID R ,  JAHNES CHRISTOPHER V ,  LUND JENNIFER L ,  SAENGER KATHERINE L ,  VOLANT RICHARD P

IPC: H01H57/00 ,  H01H59/00 ,  H01L21/00

CPC classification number: H01H59/0009

Abstract: A micro-electromechanical switch (MEMS) having a deformable elastomeric element (1) which exhibits a large change in conductivity with a small amount of displacement. The deformable elastomeric element (1) is displaced by an electrostatic force that is applied laterally resulting in a small transverse displacement. The transversal displacement, in turn, pushes a metallic contact (7) against two conductive paths (5, 6), allowing passage of electrical signals. The elastomer (1) is provided on two opposing sids with embedded metallic elements (9, 10), such as impregnated metallic rods, metallic sheets, metallic particles, or conductive paste. Actuation electrodes (18, 8) are placed parallel to the conductive sides of the elastomer. A voltage applied between the conductive side of the elastomer and the respective actuation electrodes (18, 8) generate the electrostatic attractive force that compresses the elastomer (1), creating the transverse displacement that closes the MEMS. The elastomeric based MEMS extends the lifetime of the switch by extending fatigue life of the deformable switch elements.

公开(公告)号：JP2003249137A

公开(公告)日：2003-09-05

申请号：JP2002330991

申请日：2002-11-14

Applicant: IBM

Inventor： GREENBERG DAVID R ,  DELIGIANNI HARIKLIA ,  ROBERT A GROVES ,  CHRISTOPHER V JARNES ,  LUND JENNIFER L ,  CATHERINE L SAENGER ,  VOLANT RICHARD P

IPC: B81B3/00 ,  H01H1/24 ,  H01H1/26 ,  H01H59/00

Abstract: PROBLEM TO BE SOLVED: To provide a fine electric mechanical switch having a restoring force large enough to overcome static friction. SOLUTION: This fine electric mechanical switch comprises a conductive beam 10 capable of being warped, and a plurality of electrodes which are covered with elastically deformable conductive layers 11. At first, a restoring force is generated by a single spring constant k0 of the beam 10 by applying a control voltage between the beam 10 capable of being warped and a control electrode 12 which is flush with a switch electrode 13. Then, when the fine electric mechanical switch is approached to the closed state and the conductive layers 11 are compressed, restoring forces due to additional spring constants, k1,..., kn of the plurality of deformable conductive layers 11 are sequentially added to the restoring force due to the spring constant k0 of the beam 10. In another embodiment, deformable spring-like elements are used in place of the deformable layers. Furthermore in the other embodiment, compressible layers or the deformable spring-like elements are mounted on the warping beam which is opposed to the switch electrode. COPYRIGHT: (C)2003,JPO

公开(公告)号：WO02073702A9

公开(公告)日：2003-03-20

申请号：PCT/US0207992

申请日：2002-03-13

Applicant: IBM

Inventor： ACOSTA RAUL E ,  CARASSO MELANIE L ,  CORDES STEVEN A ,  GROVES ROBERT A ,  LUND JENNIFER L ,  ROSNER JOANNA

IPC: H01F17/00 ,  H01F17/04 ,  H01F17/06 ,  H01F27/00 ,  H01F27/06 ,  H01F41/04 ,  H01L21/02 ,  H01L27/08 ,  H01L29/82 ,  H01L29/00

CPC classification number: H01L28/10 ,  H01F17/0006 ,  H01F17/0033 ,  H01F41/041 ,  H01L27/08

Abstract: A means for fabrication of solenoidal inductors interated in a semiconductor chip is provided. A solenoidal coil (50) is partially embedded in a deep well etched into the chip substrate (10). The non-embedded part (30) of the coil is fabricated as part of BEOL metallization layers (52). This allows for large cross-sectional area of the solenoid turns, tus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The farbication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric (14) followed by fabrication of the part of the coil (22) that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric (24 and 28) and planarization of the same by CMP. After planarization the fabrication of the remaining part (30) of the solenoidal coil is fabricated as part of the metallization in the BEOL (i.e. as line/vias of the BEOL). To further increase the cross section of the solenoidal coil, part of it may be built by electrodeposition through a mask on top of the BEOL layers.

Abstract translation: 提供了一种用于制造交错在半导体芯片中的螺线管电感器的装置。 螺线管线圈（50）被部分地嵌入到蚀刻到芯片衬底（10）中的深阱中。 线圈的非嵌入部分（30）被制造为BEOL金属化层（52）的一部分。 这允许螺线管转弯的大截面积，减少匝间电容耦合。 由于本发明的螺线管线圈具有大直径的横截面，所以线圈可以制造成具有大的电感值，并且占据芯片的小面积。 改进方法包括在所有FEOL步骤完成之后蚀刻衬底中的深空腔; 用电介质（14）衬里所述空腔，随后制造将通过掩模沉积导电材料金属而嵌入的线圈（22）的部分; 介电（24和28）的沉积和CMP的平坦化。 在平坦化之后，螺线管线圈的剩余部分（30）的制造被制造为BEOL中的金属化的一部分（即，作为BEOL的线/通路）。 为了进一步增加螺线管线圈的横截面，其一部分可以通过电沉积穿过BEOL层顶部的掩模来构建。

公开(公告)号：AU2002331725A1

公开(公告)日：2004-03-11

申请号：AU2002331725

申请日：2002-08-26

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  LUND JENNIFER L ,  SAENGER KATHERINE L ,  VOLANT RICHARD P

IPC: B81B3/00 ,  B81C1/00 ,  G02B5/00 ,  G02B26/00 ,  G02B26/08 ,  H01H57/00 ,  H01H59/00

Abstract: A micro-electromechanical (MEM) RF switch provided with a deflectable membrane ( 60 ) activates a switch contact or plunger ( 40 ). The membrane incorporates interdigitated metal electrodes ( 70 ) which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane ( 60 ), and is used to mechanically displace the switch contact ( 30 ). An RF gap area ( 25 ) located within the cavity ( 250 ) is totally segregated from the gaps ( 71 ) between the interdigitated metal electrodes ( 70 ). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch. The micro-electromechanical switch includes: a cavity ( 250 ); at least one conductive path ( 20 ) integral to a first surface bordering the cavity; a flexible membrane ( 60 ) parallel to the first surface bordering the cavity ( 250 ), the flexible membrane ( 60 ) having a plurality of actuating electrodes ( 70 ); and a plunger ( 40 ) attached to the flexible membrane ( 60 ) in a direction away from the actuating electrodes ( 70 ), the plunger ( 40 ) having a conductive surface that makes electric contact with the conductive paths, opening and closing the switch.

公开(公告)号：DE60237354D1

公开(公告)日：2010-09-30

申请号：DE60237354

申请日：2002-03-13

Applicant: IBM

Inventor： ACOSTA RAUL E ,  CARASSO MELANIE L ,  CORDES STEVEN A ,  GROVES ROBERT A ,  LUND JENNIFER L ,  ROSNER JOANNA

IPC: H01L29/82 ,  H01F17/00 ,  H01F17/04 ,  H01F17/06 ,  H01F27/00 ,  H01F27/06 ,  H01F41/04 ,  H01L21/02 ,  H01L27/08 ,  H01L29/00

公开(公告)号：DE60225484T2

公开(公告)日：2009-03-12

申请号：DE60225484

申请日：2002-08-26

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  LUND JENNIFER L ,  SAENGER KATHERINE L ,  VOLANT RICHARD P

IPC: B81B3/00 ,  H01H57/00 ,  B81C1/00 ,  G02B5/00 ,  G02B26/00 ,  G02B26/08 ,  H01H59/00

Abstract: A micro-electromechanical (MEM) RF switch provided with a deflectable membrane ( 60 ) activates a switch contact or plunger ( 40 ). The membrane incorporates interdigitated metal electrodes ( 70 ) which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane ( 60 ), and is used to mechanically displace the switch contact ( 30 ). An RF gap area ( 25 ) located within the cavity ( 250 ) is totally segregated from the gaps ( 71 ) between the interdigitated metal electrodes ( 70 ). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch. The micro-electromechanical switch includes: a cavity ( 250 ); at least one conductive path ( 20 ) integral to a first surface bordering the cavity; a flexible membrane ( 60 ) parallel to the first surface bordering the cavity ( 250 ), the flexible membrane ( 60 ) having a plurality of actuating electrodes ( 70 ); and a plunger ( 40 ) attached to the flexible membrane ( 60 ) in a direction away from the actuating electrodes ( 70 ), the plunger ( 40 ) having a conductive surface that makes electric contact with the conductive paths, opening and closing the switch.

公开(公告)号：DE60225484D1

公开(公告)日：2008-04-17

申请号：DE60225484

申请日：2002-08-26

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  LUND JENNIFER L ,  SAENGER KATHERINE L ,  VOLANT RICHARD P

IPC: B81B3/00 ,  H01H57/00 ,  B81C1/00 ,  G02B5/00 ,  G02B26/00 ,  G02B26/08 ,  H01H59/00

Abstract: A micro-electromechanical (MEM) RF switch provided with a deflectable membrane ( 60 ) activates a switch contact or plunger ( 40 ). The membrane incorporates interdigitated metal electrodes ( 70 ) which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane ( 60 ), and is used to mechanically displace the switch contact ( 30 ). An RF gap area ( 25 ) located within the cavity ( 250 ) is totally segregated from the gaps ( 71 ) between the interdigitated metal electrodes ( 70 ). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch. The micro-electromechanical switch includes: a cavity ( 250 ); at least one conductive path ( 20 ) integral to a first surface bordering the cavity; a flexible membrane ( 60 ) parallel to the first surface bordering the cavity ( 250 ), the flexible membrane ( 60 ) having a plurality of actuating electrodes ( 70 ); and a plunger ( 40 ) attached to the flexible membrane ( 60 ) in a direction away from the actuating electrodes ( 70 ), the plunger ( 40 ) having a conductive surface that makes electric contact with the conductive paths, opening and closing the switch.

公开(公告)号：MY127563A

公开(公告)日：2006-12-29

申请号：MYPI20020088

申请日：2002-01-11

Applicant: IBM

Inventor： BALLANTINE ARNE W ,  GROVES ROBERT A ,  LUND JENNIFER L ,  NAKOS JAMES S ,  RICE MICHAEL B ,  STAMPER ANTHONY K

IPC: H01L21/768 ,  H01L29/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/822 ,  H01L23/48 ,  H01L23/52 ,  H01L23/522 ,  H01L23/58 ,  H01L27/04 ,  H01M4/58 ,  H01M6/02 ,  H01M6/18 ,  H01M6/42 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/058 ,  H01M10/36 ,  H01M10/42

Abstract: A METHOD AND STURCTURE THAT PROVIDES A BATTERY (420) WITHIN AN INTEGRATED CIRCUIT (400) FOR PROVIDING VOLTAGE TO LOW-CURRENT ELECTRONIC DEVICES (900) THAT EXIST WITHIN THE INTERGRATED CIRCUIT. THE METHOD INCLUDES FRONT-END-OF-LINE (FEOL) PROCESSING FOR GENERATING A LAYER OF ELECTRONIC DEVICES ON A SEMICONDUCTOR WAFER (402), FOLLOWED BY BACK-END-OF-LINE(BEOL) INTEGRATION FOR WIRES THE BEOL INTEGRATION INCLUDES FORMING A MULTILAYERED STRUCTURE OF WIRING LEVELS ON THE LAYER OF ELECTORINC DEVICES. EACH WIRING LEVEL INCLUDES CONDUCTIVE METALLIZATION (E.G., METAL-PLATED VIAS CONDUCTIVE WIRING LINES, ETC) EMBEDDED IN INSULATIVE MATERIAL. THE BATTERY IS FORMED DURING BEOL INTEGRATION WITHIN ONE OR MORE WIRING LEVELS, AND THE CONDUCTIVE METALLIZATION (432,434,442,444)(E.G.,METAL-PALTED VIAS,CONDUCTIVE WIRING LINES, ETC.)EMBEDDED IN INSULATIVE MATERIAL.THE BATTERY IS FORMED DURING BEOL INTEGRATION WITHIN ONE OR MORE WIRING LEVELS,AND THE CONDUCTIVE METALLIZATION CONDUCTIVELY COUPLE POSITIVE (424) AND NEGATIVE (422) TERMINALS OF THE BATERRY TO THE ELECTRONIC DEVICES.THE BATERRY MAY HAVE SEVERAL DIFFERENT TOPOLOGIES RELATIVE TO THE STRUCTURAL AND GEOMETRICAL RELATIONSHIPS AMONG THE BATERRY ELECTRODES AND ELECTROLYTE.MULTIPLE BATTERIES MAY BE FORMED WITHIN ONE OR MORE WIRING LEVELS,AND MAY BE CONDUCTIVELY COUPLE TO THE ELECTRONIC DEVICES.THE MULTIPLE BATERIES MAY BE CONNECTED IN SERIES OR IN PARALLEL.(FIG.1)