公开(公告)号：EP2054487A4

公开(公告)日：2010-09-08

申请号：EP07814169

申请日：2007-08-16

Applicant: IBM

Inventor： COMEAU JOSEPH K V ,  KATSNELSON MARINA M ,  TIERSCH MATTHEW T ,  WHITE ERIC J

IPC: C09K13/00 ,  C09G1/04 ,  C09K13/06

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09G1/04

公开(公告)号：WO2008022259A8

公开(公告)日：2009-08-20

申请号：PCT/US2007076098

申请日：2007-08-16

Applicant: IBM ,  COMEAU JOSEPH K V ,  KATSNELSON MARINA M ,  TIERSCH MATTHEW T ,  WHITE ERIC J

Inventor： COMEAU JOSEPH K V ,  KATSNELSON MARINA M ,  TIERSCH MATTHEW T ,  WHITE ERIC J

IPC: C09K13/00

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09G1/04

Abstract: A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1 H- benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

Abstract translation: 公开了一种用于形成抛光浆料，抛光浆料和相关方法的溶液。 用于形成抛光浆料的溶液可以包括溶解在诸如烷基硫酸钠溶液的离子表面活性剂中的1 H-苯并三唑（BTA）和可能的聚丙烯酸（PAA）溶液。 该溶液可以过滤并用于抛光浆料中。 这种溶解BTA的方法导致抛光浆料中的高BTA浓度，而不会向浆料中添加外来成分或增加安全隐患。 此外，由于该溶液非常稳定（例如可以冷冻和解冻）并且与常规方法相比具有较少的体积，因此该溶液更易于运输。 此外，由于去除可能引起划伤的颗粒，抛光浆料性能大大提高。

公开(公告)号：WO2011162950A3

公开(公告)日：2012-05-24

申请号：PCT/US2011039564

申请日：2011-06-08

Applicant: IBM ,  HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

Inventor： HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

IPC: B81C1/00 ,  B81B3/00 ,  H01H59/00

CPC classification number: B81C1/00365 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60b) includes forming a first sacrificial cavity layer (18) over a wiring layer (14) and substrate (10). The method further includes forming an insulator layer (40) over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity (60b) of the MEMS.

Abstract translation: 形成至少一个微机电系统（MEMS）腔（60b）的方法包括在布线层（14）和衬底（10）上形成第一牺牲腔层（18）。 该方法还包括在第一牺牲腔层上形成绝缘体层（40）。 该方法还包括在绝缘体层上执行反向镶嵌回蚀工艺。 该方法还包括平坦化绝缘体层和第一牺牲腔层。 该方法还包括将第一牺牲腔层排出或剥离到用于MEMS的第一腔（60b）的平坦表面。

公开(公告)号：WO2012047458A2

公开(公告)日：2012-04-12

申请号：PCT/US2011051348

申请日：2011-09-13

Applicant: IBM ,  DEMUYNCK DAVID A ,  HE ZHONG-XIANG ,  MIGA DANIEL R ,  MOON MATTHEW D ,  VANSLETTE DANIEL S ,  WHITE ERIC J

Inventor： DEMUYNCK DAVID A ,  HE ZHONG-XIANG ,  MIGA DANIEL R ,  MOON MATTHEW D ,  VANSLETTE DANIEL S ,  WHITE ERIC J

IPC: H01L21/28

CPC classification number: H01L21/76843 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76879 ,  H01L23/5227 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC (10) includes at least one trench (20) within a dielectric layer (25) disposed on a substrate (30). The trench is conformally coated with a liner and seed layer (35), and includes an interconnect (40) within. The interconnect includes a hard mask (45) on the sidewalls of the interconnect.

Abstract translation: 本公开一般涉及集成电路（IC），IC互连及其制造方法，并且更具体地涉及高性能电感器。 IC（10）包括设置在衬底（30）上的电介质层（25）内的至少一个沟槽（20）。 沟槽共形涂覆有衬里和籽晶层（35），并且包括内部的互连（40）。 该互连包括互连侧壁上的硬掩模（45）。

公开(公告)号：WO2011162949A2

公开(公告)日：2011-12-29

申请号：PCT/US2011039560

申请日：2011-06-08

Applicant: IBM ,  DANG DINH ,  DOAN THAI ,  DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K ,  TWOMBLY JOHN G ,  WHITE ERIC J

Inventor： DANG DINH ,  DOAN THAI ,  DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K ,  TWOMBLY JOHN G ,  WHITE ERIC J

IPC: B81B3/00 ,  B81C1/00 ,  H01H59/00

CPC classification number: B81C1/00365 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60a, 60b) having a planar surface using a reverse damascene process.

Abstract translation: 提供了平面腔微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括使用反向镶嵌工艺形成具有平面表面的至少一个微机电系统（MEMS）腔（60a，60b）。

公开(公告)号：GB2494359B

公开(公告)日：2015-01-14

申请号：GB201300085

申请日：2011-06-08

Applicant: IBM

Inventor： HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

IPC: B81C1/00 ,  H01H57/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：DE112012003456T5

公开(公告)日：2014-04-30

申请号：DE112012003456

申请日：2012-09-11

Applicant: IBM

Inventor： BATES GRAHAM M ,  RITTER JASON P ,  TIERSCH MATTHEW T ,  SHAH EVA A ,  WHITE ERIC J ,  BRIGHAM MICHAEL T ,  COMEAU JOSEPH K

IPC: C11D7/32

Abstract: Eine Zusammensetzung und ein Verfahren für ein chemisch-mechanisches Polieren. Die Zusammensetzung beinhaltet ein Tensid-Anion, einen Alkylalkohol sowie ein Verdünnungsmittel (5; 290A und 290B). Die Zusammensetzung beinhaltet des Weiteren Schleifmittelpartikel sowie ein Oxidationsmittel. Das Verfahren beinhaltet ein Bereitstellen der Zusammensetzung auf einer zu polierenden Oberfläche sowie ein Polieren der Oberfläche, indem die Oberfläche mit einem Polier-Pad in Kontakt gebracht wird.

公开(公告)号：GB2494600A

公开(公告)日：2013-03-13

申请号：GB201300265

申请日：2011-06-08

Applicant: IBM

Inventor： DANG DINH ,  DOAN THAI ,  DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K ,  TWOMBLY JOHN G ,  WHITE ERIC J

IPC: B81B3/00 ,  B81C1/00 ,  H01H57/00

Abstract: Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60a, 60b) having a planar surface using a reverse damascene process.

公开(公告)号：DE112011103400T5

公开(公告)日：2013-08-22

申请号：DE112011103400

申请日：2011-09-13

Applicant: IBM

Inventor： MIGA DANIEL R ,  MOON MATTHEW D ,  HE ZHONG-XIANG ,  VANSLETTE DANIEL S ,  WHITE ERIC J ,  DEMUYNCK DAVID A

IPC: H01L21/28

Abstract: Die Offenbarung betrifft allgemein integrierte Schaltungen (ICs), IC-Verbindungen und Verfahren zur Herstellung derselben und insbesondere Hochleistungsinduktoren. Die IC (10) weist mindestens einen Graben (20) innerhalb einer Dielektrikumsschicht (25) auf, die auf einem Substrat (30) angeordnet ist. Der Graben wird formangepasst mit einer Auskleidungs- und Keimschicht (35) beschichtet und weist eine Verbindung (40) darin auf. Die Verbindung weist eine Hartmaske (45) auf den Seitenwänden der Verbindung auf.

公开(公告)号：GB2498154A

公开(公告)日：2013-07-03

申请号：GB201307079

申请日：2011-09-13

Applicant: IBM

Inventor： DEMUYNCK DAVID ,  HE ZHONG-XIANG ,  MIGA DANIEL ,  MOON MATTHEW D ,  VANSLETTE DANIEL ,  WHITE ERIC J

IPC: H01L21/768 ,  H01L23/522

Abstract: The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC (10) includes at least one trench (20) within a dielectric layer (25) disposed on a substrate (30). The trench is conformally coated with a liner and seed layer (35), and includes an interconnect (40) within. The interconnect includes a hard mask (45) on the sidewalls of the interconnect.