公开(公告)号：DE69806542T2

公开(公告)日：2003-03-20

申请号：DE69806542

申请日：1998-04-27

Applicant: IBM

Inventor： KNICKERBOCKER JOHN ULRICH ,  KNOX ANDREW RAMSAY ,  ROSENBERG ROBERT ,  HUMENIK JAMES N

IPC: H01F7/02 ,  H01F41/16 ,  H01J29/68 ,  H01F41/02

公开(公告)号：DE69708388D1

公开(公告)日：2002-01-03

申请号：DE69708388

申请日：1997-06-10

Applicant: IBM

Inventor： REDDY SRINIVASA S N ,  KNICKERBOCKER JOHN ULRICH ,  WALL DONALD RENE

IPC: C23C16/08 ,  C23C16/44 ,  H01L21/28 ,  H01L21/285 ,  H05K3/24

Abstract: The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces (32, 34) which are capable of receiving nickel or alloys thereof, using an Iodide source (23), preferably an Iodide salt, such as, Copper Iodide.

公开(公告)号：DE68923717T2

公开(公告)日：1996-04-18

申请号：DE68923717

申请日：1989-02-28

Applicant: IBM

Inventor： BAISE ARNOLD IVAN ,  CASEY JON ALFRED ,  CLARKE DAVID RICHARD ,  DIVAKARUNI RENUKA SHASTRI ,  DUNKEL WERNER ERNEST ,  HUMENIK JAMES NOEL ,  KANDETZKE STEVEN MICHAEL ,  KIRBY DANIEL PATRICK ,  KNICKERBOCKER JOHN ULRICH ,  MATTS AMY TRESTMAN ,  TAKACS MARK ANTHONY ,  WIGGINS LOVELL BERRY

IPC: H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40 ,  H01L23/15 ,  H01L23/52

Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks (33) with a flexible material (35). Uniform gaps between the metal (32) and dielectric materials (31) can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

公开(公告)号：DE68923717D1

公开(公告)日：1995-09-14

申请号：DE68923717

申请日：1989-02-28

Applicant: IBM

Inventor： BAISE ARNOLD IVAN ,  CASEY JON ALFRED ,  CLARKE DAVID RICHARD ,  DIVAKARUNI RENUKA SHASTRI ,  DUNKEL WERNER ERNEST ,  HUMENIK JAMES NOEL ,  KANDETZKE STEVEN MICHAEL ,  KIRBY DANIEL PATRICK ,  KNICKERBOCKER JOHN ULRICH ,  MATTS AMY TRESTMAN ,  TAKACS MARK ANTHONY ,  WIGGINS LOVELL BERRY

IPC: H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40 ,  H01L23/15 ,  H01L23/52

Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks (33) with a flexible material (35). Uniform gaps between the metal (32) and dielectric materials (31) can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

公开(公告)号：DE3787993T2

公开(公告)日：1994-05-19

申请号：DE3787993

申请日：1987-04-22

Applicant: IBM

Inventor： FLAITZ PHILIP LEE ,  FLANAGAN ARLYNE MARIE ,  HARVILCHUCK JOSEPH MATTHEW ,  HERRON LESTER WYNN ,  KNICKERBOCKER JOHN ULRICH ,  NUFER ROBERT WOLFF ,  PERRY CHARLES HAMPTON ,  REDDY SRINIVASA N

IPC: C04B35/638 ,  C04B35/64 ,  H01L21/48