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    CERAMIC SUBSTRATE COMPRISING SEALING LAYER
    2.
    发明专利
    CERAMIC SUBSTRATE COMPRISING SEALING LAYER 失效

    公开(公告)号：JP2000357874A

    公开(公告)日：2000-12-26

    申请号：JP2000149183

    申请日：2000-05-22

    Applicant: IBM

    Inventor： FASANO BENJAMIN V ,  INDYK RICHARD F ,  KAMATH SUNDAR M ,  KNICKERBOCKER JOHN U ,  LANGENTHAL SCOTT I ,  O'CONNOR DANIEL P ,  REDDY SRINIVASA S N

    IPC: H05K1/11 ,  B32B18/00 ,  H01L23/12 ,  H01L23/498 ,  H05K1/03 ,  H05K3/24 ,  H05K3/40 ,  H05K3/46

    Abstract: PROBLEM TO BE SOLVED: To provide a ceramic substrate of low thermal-expansion factor by providing a plurality of layers of a multi-layer ceramic material comprising a sealing layer and a via hole which, filled with a metal material, comprises no ceramic material. SOLUTION: At a via hole part 24 of a first layer 12, a via hole 26 which, filled with a metal material, comprises no ceramic material is formed. A via hole 28 comprising a mixture of metal material and ceramic material is inserted in a second layer 14, and the via hole 28 so seals a ceramic substrate 10 not to penetrate deeper than the first layer 12. For a third layer 16, a via hole 30 comprising no ceramic material is formed related to the via hole 26 in the first layer 12. Thus, the via holes 26, 28, and 30 of the plurality of layers 12, 14, and 16 allows transmission of electric signal and power between layers, sealing an outside part layer 20 with a via hole 38.

    DEPOSITION OF NICKEL OR NICKEL ALLOY BY CVD USING IODIDE
    3.
    发明专利
    DEPOSITION OF NICKEL OR NICKEL ALLOY BY CVD USING IODIDE 失效

    公开(公告)号：JPH1068075A

    公开(公告)日：1998-03-10

    申请号：JP16163997

    申请日：1997-06-18

    Applicant: IBM

    Inventor： REDDY SRINIVASA S N ,  KNICKERBOCKER JOHN ULRICH ,  WALL DONALD RENE

    IPC: C23C16/08 ,  C23C16/44 ,  H01L21/28 ,  H01L21/285 ,  H05K3/24

    Abstract: PROBLEM TO BE SOLVED: To deposit Ni or an Ni alloy on the surface of a metal hard to be worked by interposing an iodine material. SOLUTION: A metal 32 hard to be worked which is the exposed end part where Mo or the like is exposed on a ceramic base 30, depositing metallic materials 40 and 45 such as Ni or Ni alloy and solid iodine, preferably. CuI salt are charged into a box, is heated to about 700 to 1000 deg.C and is held for about 1 to 200min. The CuI 23 is brought into reaction with solid Ni or Ni alloy 40 and 45 in a vapor phase state to generate gaseous Ni iodine, which is brought into reaction with the exposed surface of the metal 32. Then, Ni molecules are reduced, and substantially pure Ni is deposited thereon. The iodine is made free from the metal 32, returned to the materials 40 and 45 and again brought into reaction with Ni, and the process is repeated. In this way, the iodine is used as a simple carrier for Ni and is not consumed in the process.

    9.
    发明专利
    未知

    公开(公告)号：BR8601320A

    公开(公告)日：1986-12-02

    申请号：BR8601320

    申请日：1986-03-24

    Applicant: IBM

    Inventor： REDDY SRINIVASA S N

    IPC: C03C17/06 ,  C03C27/04 ,  C04B37/02 ,  C04B41/51 ,  C04B41/88 ,  H01B1/16 ,  H05K1/09 ,  C09J1/00

    Abstract: The paste comprises a eutectic composition of Cu2O and P2O5, an organic vehicle and optionally particulate copper. … The method of forming the metal paste composition includes the steps of forming a particulate material of a eutectic composition of Cu2O and P2O5, and combining the eutectic material with an organic vehicle and optionally Cu particles. … The paste, when fired, achieves firm adhesives between metal conductors and ceramic and glass substrates.

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