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21.
公开(公告)号:GB2498674A
公开(公告)日:2013-07-24
申请号:GB201307732
申请日:2011-10-21
Applicant: IBM
Inventor: CHEN KUANG-JUNG , LIU SEN , HUANG WU-SONG , LI WAI-KIN
Abstract: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomelic unit having a pendant acid labile moiety and a second monomelic unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193nm (ArF) lithography.
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公开(公告)号:DE112010003331T5
公开(公告)日:2012-07-05
申请号:DE112010003331
申请日:2010-08-06
Applicant: IBM
Inventor: VYKLICKY LIBOR , GOLDFARB DARIO L , GLODDE MARTIN , HUANG WU-SONG , LIU SEN , LI WAI-KIN
Abstract: Härtbare flüssige Formulierung, welche das Folgende umfasst: (i) einen oder mehrere Nahinfrarot absorbierende Polymethinfarbstoffe; (ii) ein oder mehrere vernetzbare Polymere und (iii) ein oder mehrere Gießlösungsmittel. Die Erfindung betrifft auch Nahinfrarot absorbierende feste Dünnschichten, die aus vernetzten Formen der härtbaren flüssigen Formulierung zusammengesetzt sind. Die Erfindung betrifft ferner ein mikroelektronisches Substrat, welches eine Beschichtung der Nahinfrarot absorbierenden festen Dünnschicht enthält, sowie ein Verfahren zum Strukturieren einer Photoresistschicht, die auf ein mikroelektronisches Substrat geschichtet wird, für den Fall, dass die Nahinfrarot absorbierende Dünnschicht zwischen dem mikroelektronischen Substrat und einer Photoresist-Dünnschicht angeordnet ist.
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23.
公开(公告)号:GB2486851A
公开(公告)日:2012-06-27
申请号:GB201206101
申请日:2011-01-07
Applicant: IBM
Inventor: LIU SEN , VARANASI PUSHKARA
IPC: G03F7/004
Abstract: The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193nm (ArF) lithography.
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24.
公开(公告)号:GB2517324A
公开(公告)日:2015-02-18
申请号:GB201419648
申请日:2013-06-27
Applicant: IBM
Inventor: CHEN KUANG-JUNG , HOLMES STEVEN , HUANG WU-SONG , KWONG RANEE WAI-LING , LIU SEN
IPC: G02B1/11 , B32B7/02 , C09D133/00 , G03F7/004
Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy- containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.
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公开(公告)号:GB2511665A
公开(公告)日:2014-09-10
申请号:GB201408327
申请日:2012-11-02
Applicant: IBM
Inventor: CHEN KUANG-JUNG , HUANG WU-SONG , LIU SEN , HOLMES STEVEN , BREYTA GREGORY
IPC: G03F7/004 , G03F7/028 , G03F7/11 , G03F7/26 , H01L21/027
Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
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26.
公开(公告)号:DE112012004718T5
公开(公告)日:2014-08-07
申请号:DE112012004718
申请日:2012-11-02
Applicant: IBM
Inventor: CHEN KUANG-JUNG , HUANG WU-SONG , HOLMES STEVEN J , BREYTA GREGORY , LIU SEN
IPC: G03F7/004 , G03F7/028 , G03F7/11 , G03F7/26 , H01L21/027
Abstract: Die vorliegende Erfindung bezieht sich auf eine hybride Photoresistzusammensetzung für eine verbesserte Auflösung sowie auf ein musterbildendes Verfahren unter Verwendung der Photoresistzusammensetzung. Die Photoresistzusammensetzung beinhaltet einen strahlungsempfindlichen Säuregenerator, ein quervernetzendes Agens sowie ein Polymer mit einer hydrophoben Monomer-Einheit und einer hydrophilen Monomer-Einheit, die eine Hydroxyl-Gruppe enthält. Wenigstens einige der Hydroxyl-Gruppen sind mit einer säurelabilen funktionellen Gruppe mit einer niedrigen Aktivierungsenergie geschützt. Das Photoresist ist in der Lage, eine hybride Reaktion auf eine einzelne Belichtung zu erzeugen. Das musterbildende Verfahren verwendet die hybride Reaktion, um eine Struktur mit Muster in der Photoresistschicht zu bilden. Die Photoresistzusammensetzung und das musterbildende Verfahren der vorliegenden Erfindung sind nützlich, um kleine Elemente mit einer präzisen Abbildungssteuerung zu drucken, im Besonderen Zwischenräume mit geringen Abmessungen.
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公开(公告)号:AT509299T
公开(公告)日:2011-05-15
申请号:AT08870322
申请日:2008-12-17
Applicant: IBM
Inventor: GLODDE MARTIN , LIU SEN , POPOVA IRENE
Abstract: A photoacid generator compound P+A-, comprises an antenna group P+ comprising a cation that generates protons upon interaction with light, and A- comprising a weakly coordinating peracceptor-substituted aromatic anion that does not contain fluorine or semi-metallic elements such as boron. In one embodiment, such anions comprise the following compounds 4, 5, 6 and 7, wherein E comprises an electron-withdrawing group and the removal of one proton generates aromaticity. P+ comprises an onium cation that decomposes into a proton and other components upon interaction with photons. P+ may comprise an organic chalcogen onium cation or a halonium cation, wherein the chalcogen onium cation in another embodiment may comprises an oxonium, sulfonium, selenium, tellurium, or onium cation, and the halonium cation may comprise an iodonium, chlorine or bromine onium cation. A novel compound comprises TPS CN5. A photolithographic formulation comprises the photoacid generator in combination with a photolithographic composition such as a photolithographic polymer. The formulation, when on a substrate, is exposed to optical lithographic radiation or ArF (193 nm) or KrF (248 nm) radiation, and developed. A product comprises an article of manufacture made by the method of the invention.
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