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公开(公告)号：EP0698230A4
公开(公告)日：1995-10-24
申请号：EP94900495
申请日：1993-10-29
Applicant: IBM
Inventor： BRUNSVOLD WILLIAM ROSS , BREYTA GREGORY , DIPIETRO RICHARD ANTHONY , ITO HIROSHI , KNORS CHRISTOPHER JOHN , KWONG RANEE WAI-LING , MIURA STEVE SEIICHI , MONTGOMERY MELVIN WARREN , MOREAU WAYNE MARTIN , SACHDEV HARBANS SINGH , WELSH KEVIN MICHAEL
IPC: G03F7/004 , G03F7/039 , H01L21/027 , G03C5/16 , G03F7/029
CPC classification number: G03F7/039
Abstract: Resists for use in ultraviolet, electron beam and x-ray exposure devices comprising a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate esters or benzenesulfonyloxy esters of N-hydroxyimides.
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2.发明专利Semiconductor and method of forming air gap in semiconductor device (air gap with selective pinchoff using anti-nucleation layer) 有权半导体器件中形成空气隙的半导体和方法（使用反核层选择性引脚的空气隙）
公开(公告)号：JP2008277807A
公开(公告)日：2008-11-13
申请号：JP2008102183
申请日：2008-04-10
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor： CLEVENGER LAWRENCE A , EDELSTEIN DANIEL C , BREYTA GREGORY , COLBURN MATTHEW EARL , SHOM PONOTH
IPC: H01L21/768 , H01L23/522
CPC classification number: H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces cross-talk between conducting lines for wiring. SOLUTION: A method of forming a cavity in a semiconductor device 300 comprises a step for depositing an anti-nucleating layer 318 on the interior surface of the cavity in an ILD layer of the semiconductor device. This anti-nucleating layer prevents a subsequently-deposited dielectric layer from being formed in the cavity. By preventing the formation of these layers, capacitance is reduced, thereby resulting in improved semiconductor performance. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：提供一种减少用于布线的导线之间的串扰的半导体器件。 解决方案：在半导体器件300中形成腔的方法包括在半导体器件的ILD层中的空腔的内表面上沉积抗成核层318的步骤。 该防成核层防止在空腔中形成随后沉积的介电层。 通过防止这些层的形成，电容降低，从而提高半导体性能。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：DE69618752T2
公开(公告)日：2002-09-12
申请号：DE69618752
申请日：1996-10-01
Applicant: IBM
Inventor： BREYTA GREGORY , DIPIETRO RICHARD A , HOFER DONALD C , ITO HIROSHI
IPC: G03F7/004 , G03F7/039 , H01L21/027
Abstract: A radiation sensitive resist compsn. comprises: (a) bis (lower alkyl phenyl) iodonium camphor sulphonate; and (b) a copolymer comprising hydroxystyrene and (meth)acrylate having an acid-clearable substituent.
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公开(公告)号：DE69618752D1
公开(公告)日：2002-03-14
申请号：DE69618752
申请日：1996-10-01
Applicant: IBM
Inventor： BREYTA GREGORY , DIPIETRO RICHARD A , HOFER DONALD C , ITO HIROSHI
IPC: G03F7/004 , G03F7/039 , H01L21/027
Abstract: A radiation sensitive resist compsn. comprises: (a) bis (lower alkyl phenyl) iodonium camphor sulphonate; and (b) a copolymer comprising hydroxystyrene and (meth)acrylate having an acid-clearable substituent.
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公开(公告)号：DE69324439T2
公开(公告)日：1999-11-25
申请号：DE69324439
申请日：1993-10-29
Applicant: IBM
Inventor： BREYTA GREGORY , CLECAK NICHOLAS JEFFRIES , HINSBERG III WILLIAM DINAN , HOFER DONALD CLIFFORD , ITO HIROSHI , MACDONALD SCOTT ARTHUR , SOORIJAKUMARAN RATMAN
Abstract: A lithographic imaging process is provided for use in the manufacture of integrated circuits. A substrate is coated with a polymeric film comprising a vinyl polymer, a photosensitive acid generator, and acid labile groups. It is then heated to typically just above the glass transition temperature of the polymer, but below the cleavage temperature of the acid labile groups. The film is then expose imagewise to radiation to generate free acid, and the film is once more heated, again to typically just above the glass transition temperature of the polymer, but below the cleavage temperature of the acid labile groups. Finally the image is developed. The process provides protection to the photoresist film from airborne chemical contaminants.
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Patent Agency Ranking
公开(公告)号：SG52851A1
公开(公告)日：1998-09-28
申请号：SG1996010825
申请日：1996-10-07
Applicant: IBM
Inventor： BREYTA GREGORY , DIPIETRO RICHARD ANTHONY , HOFER DONALD CLIFFORD , ITO HIROSHI
IPC: G03F7/004 , G03F7/039 , H01L21/027 , H01L21/312
Abstract: A radiation sensitive resist compsn. comprises: (a) bis (lower alkyl phenyl) iodonium camphor sulphonate; and (b) a copolymer comprising hydroxystyrene and (meth)acrylate having an acid-clearable substituent.
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公开(公告)号：SG11201706909UA
公开(公告)日：2017-09-28
申请号：SG11201706909U
申请日：2016-05-06
Inventor： BREYTA GREGORY , CHAN JULIAN M W , COADY DANIEL J , ENGLER AMANDA C , GARCIA JEANETTE M , HAN WEI , HEDRICK JAMES L , ONO ROBERT J , NELSON ALSHAKIM , LIU SHAOQIONG , TEO JYE YNG , YANG YI YAN , ZHANG MU SAN
IPC: C08G69/44 , A61K8/00 , A61K31/785 , C08K5/19
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公开(公告)号：DE112014004266T5
公开(公告)日：2016-06-23
申请号：DE112014004266
申请日：2014-08-01
Applicant: IBM
Inventor： ALLEN ROBERT DAVID , BAJJURI KRISHNA MOHAN , BREYTA GREGORY , HEDRICK JAMES LUPTON , LARSON CARL ERIC
Abstract: Vorgesehen wird ein Verfahren zur Depolymerisation von Polyester aus gebrauchten Produkten, wie Getränkeflaschen, zur Herstellung eines hochreinen Reaktionsprodukts. Für die Depolymerisationsreaktion werden die Polyester mit einem Alkohol mit 2 bis 5 Kohlenstoffen und einem Amin-Organokatalysator bei einer Temperatur von etwa 150 °C bis etwa 250 °C miteinander reagiert. In einer Anwendung ermöglicht die Verwendung eines Organokatalysators mit einem Siedepunkt, der wesentlich unter dem Siedepunkt des Alkohol-Reaktants liegt, das einfache Recycling des Amin-Organokatalysators. In einer anderen Anwendung ermöglicht die Durchführung der Depolymerisationsreaktion unter Druck bei einer Temperatur über der des Alkohols beschleunigte Depolymerisationsraten und die Rückgewinnung des Organokatalysators ohne weitere Wärmezufuhr. In einer weiteren Anwendung erzeugt die glykolitische Depolymerisation von Poly(ethylenterephthalat)(PET) aus gebrauchten Getränkeflaschen ein reines Reaktionsprodukt von Bis(2-hydroxyethyl)terephthalat (BHET), was wiederum zur Herstellung eines hochreinen PET in Getränkeflaschenqualität verwendet werden kann, in einem Closed Loop-Prozess mit minimalem Ausstoß und Abfall.
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公开(公告)号：DE69322946T2
公开(公告)日：1999-08-12
申请号：DE69322946
申请日：1993-10-15
Applicant: IBM
Inventor： BREYTA GREGORY , KNORS CHRISTOPHER JOHN , ITO HIROSHI , SOORIYAKUMARAN RATNAM
Abstract: The present invention relates to an improved chemically amplified photoresist composition comprising (i) a photosensitive acid generator and (ii) a polymer comprising the reaction product of hydroxystyrene with acrylate, methacrylate or a mixture of acrylate and methacrylate.
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公开(公告)号：GB2511665A
公开(公告)日：2014-09-10
申请号：GB201408327
申请日：2012-11-02
Applicant: IBM
Inventor： CHEN KUANG-JUNG , HUANG WU-SONG , LIU SEN , HOLMES STEVEN , BREYTA GREGORY
IPC: G03F7/004 , G03F7/028 , G03F7/11 , G03F7/26 , H01L21/027
Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
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