公开(公告)号：DE69114759T2

公开(公告)日：1996-06-20

申请号：DE69114759

申请日：1991-04-13

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  KAANTA CARTER WELLING ,  PREVITI-KELLY ROSEMARY ANN ,  RYAN JAMES GARDNER

IPC: C08L79/08 ,  H01L21/312 ,  H01L21/768 ,  H01L23/528 ,  H01L23/485

公开(公告)号：DE3787772T2

公开(公告)日：1994-05-05

申请号：DE3787772

申请日：1987-07-24

Applicant: IBM

Inventor： BRADY MICHAEL JOHN ,  KANG SUNG KWON ,  MOSKOWITZ PAUL ANDREW ,  RYAN JAMES GARDNER ,  REILEY TIMOTHY CLARK ,  WALTON ERICK GREGORY ,  BICKFORD HARRY RANDALL ,  PALMER MICHAEL JOHN

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/48

公开(公告)号：DE3469108D1

公开(公告)日：1988-03-03

申请号：DE3469108

申请日：1984-09-21

Applicant: IBM

Inventor： BOULDIN DENNIS PATRICK ,  HALLOCK DALE PAUL ,  ROBERTS STANLEY ,  RYAN JAMES GARDNER

IPC: H01L21/225 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  H01L29/43 ,  H01L21/31

Abstract: A method for diffusing a conductivity determining impurity in a semiconductor substrate and making electrical contact thereto by depositing a conductive layer made of a rare earth hexaboride material containing a predetermined amount of silicon in it over a surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the hexaboride material to diffuse into the adjoining portion of the substrate to modify its conductor characteristics. At the same time a good electrical ohmic contact is established between the conductive layer and the adjoining substrate portion while the conductive layer retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment. A silicon dioxide layer is also formed on the exposed surface of the silicon containing hexaboride material through the oxidation of the silicon disposed close to the exposed surfaces of the hexaboride material.