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    21.
    发明专利
    未知

    公开(公告)号：DE10058339A1

    公开(公告)日：2002-06-06

    申请号：DE10058339

    申请日：2000-11-24

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER

    IPC: H03H9/02 ,  H03H9/58 ,  H03H9/60 ,  H03H3/02 ,  H03H9/64 ,  H03H9/25

    Abstract: The invention relates to bulk acoustic wave filters comprising at least two bulk acoustic wave resonators, each of these comprising at least one first electrode, a piezoelectric layer and a second electrode. At least two of the bulk acoustic wave resonators have effective resonator surfaces which differ in their surface form and/or surface content. The inventive design of the bulk acoustic wave resonators enables optimal suppression of interference modes without influencing the impedance level of the filter.

    22.
    发明专利
    未知

    公开(公告)号：DE50212077D1

    公开(公告)日：2008-05-21

    申请号：DE50212077

    申请日：2002-08-22

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

    IPC: H03H3/02 ,  H03H9/58 ,  H03H3/04 ,  H03H9/00 ,  H03H9/60

    Abstract: A piezoelectric component comprises at least two stacked crystal filters on a substrate. Each stacked crystal filter comprises a bottom electrode, a first piezoelectric layer arranged above the bottom electrode, a central electrode arranged above the first piezoelectric layer, a second piezoelectric layer arranged above the central electrode, and a top electrode arranged above the second piezoelectric layer. The bottom electrodes are directly connected to one another and the central electrodes are directly connected to one another.

    24.
    发明专利
    未知

    公开(公告)号：DE50112976D1

    公开(公告)日：2007-10-18

    申请号：DE50112976

    申请日：2001-05-22

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

    IPC: C23C14/58 ,  H01L41/22 ,  C23C16/56 ,  H01C17/24 ,  H01J37/305 ,  H01L41/09 ,  H01L41/187 ,  H03H3/04

    Abstract: Production of a layer having a locally adapted and/or predefined layer thickness profile comprises applying a layer onto a substrate; determining a removal profile for the applied layer; and guiding an ion beam once over the layer so that the layer is locally etched at the site of the ion beam corresponding to the removal profile and a layer having a locally adapted and/or predefined layer thickness profile is produced. Preferably the spread of the ion beam is more than 1, preferably more than 5 mm, or less than 100 mm, preferably less than 50 mm. The ion beam is an argon ion beam with a gauss-like current density distribution. The ion beam is guided in traces over the layer and the trace distance is less than the half-width spread of the beam.

    BULK-ACOUSTIC-WAVE-FILTER
    25.
    发明专利
    BULK-ACOUSTIC-WAVE-FILTER 未知

    公开(公告)号：DE50112082D1

    公开(公告)日：2007-04-05

    申请号：DE50112082

    申请日：2001-11-06

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER

    IPC: H03H9/58 ,  H03H9/02 ,  H03H9/60

    Abstract: The invention relates to bulk acoustic wave filters including at least two bulk acoustic wave resonators. Each of these resonators includes at least one first electrode, a piezoelectric layer, and a second electrode. At least two of the bulk acoustic wave resonators have effective resonator surfaces which differ in their surface form and/or surface content. The inventive design of the bulk acoustic wave resonators enables optimal suppression of interference modes without influencing the impedance level of the filter.

    28.
    发明专利
    未知

    公开(公告)号：DE50102425D1

    公开(公告)日：2004-07-01

    申请号：DE50102425

    申请日：2001-07-03

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

    IPC: H01L21/28 ,  H01L37/02 ,  H01L41/08 ,  H01L41/09 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H03H9/17

    Abstract: A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production. The layer sequence has a lower electrode, an upper electrode and a layer which is arranged between them and is piezoelectrical or pyroelectrical. An auxiliary layer is arranged between the lower electrode and the layer and is used for homogeneously oriented growth of the layer during the production process. The auxiliary layer preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.

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