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    1.
    发明专利
    未知

    公开(公告)号：DE10246101A1

    公开(公告)日：2004-04-15

    申请号：DE10246101

    申请日：2002-10-02

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： DAECHE FRANK ,  WEBER MICHAEL ,  DANGELMAIER JOCHEN ,  EHRLER GUENTER ,  MECKES ANDREAS

    IPC: B81B7/00 ,  B81C3/00 ,  H01L23/04

    Abstract: Production of a housing for a chip with a micro-mechanical structure used in the production of micro-mechanical switches comprises preparing a base having a first photolithographic structurable layer, structuring and further processing. Production of a housing for a chip with a micro-mechanical structure (22) comprises preparing a first base having a first photolithographic structurable layer, structuring the first layer to form a lid for the micro-mechanical structure, preparing a chip with the micro-mechanical structure arranged on a main surface of the chip between first contact elements, applying a second photolithographic structurable layer (28) on a partial region of the main surface of the chip, structuring the second layer to form a recess (32) surrounded by a wall (30) in the second layer and to expose the contact elements, joining the first base and the chip, removing the first base to obtain a chip with a hollow chamber, joining the second base and the chip so that the first contact elements are connected to the second base via a conducting structure, and removing the second base to expose the conducting structure.

    3.
    发明专利
    未知

    公开(公告)号：DE59810039D1

    公开(公告)日：2003-12-04

    申请号：DE59810039

    申请日：1998-08-14

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： BEVER THOMAS ,  SCHMITT STEPHAN ,  EHRLER GUENTER

    IPC: G01L9/00 ,  G01L9/04 ,  G01L9/06 ,  G01P15/08 ,  G01P15/12

    Abstract: The invention relates to a semiconductor detector with a base structure (4) and at least one deformable body (8), wherein the deformable body (8) consists of a semiconductor substrate which is doped with a dopant displaying a first type of conductivity. Piezo resistors (14) doped with a dopant displaying an opposite type of conductivity are located in the deformable body (8). The deformable body (8) is in contact with a medium in at least one partial area. The inventive semiconductor detector is characterized in that the partial area has a dopant concentration that is lower than the dopant concentration in the area located between said partial area and the piezo resistor (14).

    4.
    发明专利
    未知

    公开(公告)号：DE10246101B4

    公开(公告)日：2005-12-01

    申请号：DE10246101

    申请日：2002-10-02

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： DAECHE FRANK ,  WEBER MICHAEL ,  DANGELMAIER JOCHEN ,  EHRLER GUENTER ,  MECKES ANDREAS

    IPC: B81B7/00 ,  B81C3/00 ,  H01L23/04

    Abstract: Production of a housing for a chip with a micro-mechanical structure used in the production of micro-mechanical switches comprises preparing a base having a first photolithographic structurable layer, structuring and further processing. Production of a housing for a chip with a micro-mechanical structure (22) comprises preparing a first base having a first photolithographic structurable layer, structuring the first layer to form a lid for the micro-mechanical structure, preparing a chip with the micro-mechanical structure arranged on a main surface of the chip between first contact elements, applying a second photolithographic structurable layer (28) on a partial region of the main surface of the chip, structuring the second layer to form a recess (32) surrounded by a wall (30) in the second layer and to expose the contact elements, joining the first base and the chip, removing the first base to obtain a chip with a hollow chamber, joining the second base and the chip so that the first contact elements are connected to the second base via a conducting structure, and removing the second base to expose the conducting structure.

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