公开(公告)号：BR0113164A

公开(公告)日：2003-06-24

申请号：BR0113164

申请日：2001-08-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PALM HERBERT ,  WILLER JOSEF ,  GRATZ ACHIM ,  KRIZ JAKOB ,  ROEHRICH MAYK

IPC: H01L21/8247 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: Each memory cell is a memory transistor which is provided on a top side of a semiconductor body and has a gate electrode which is arranged in a trench located between a source region and a drain region that are formed in the semiconductor material. The gate electrode is separated from the semiconductor material by a dielectric material. At least between the source region and the gate electrode and between the drain region and the gate electrode, there is an oxide-nitride-oxide layer sequence. The layer sequence is provided for the purpose of trapping charge carriers at the source and the drain.

公开(公告)号：DE19946715C1

公开(公告)日：2001-05-03

申请号：DE19946715

申请日：1999-09-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KUX ANDREAS ,  PALM HERBERT

IPC: H01L21/768 ,  H01L25/10 ,  H01L25/065 ,  H01L23/538

公开(公告)号：DE19941684A1

公开(公告)日：2001-04-05

申请号：DE19941684

申请日：1999-09-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRUECKLMEIER ERIC-ROGER ,  PALM HERBERT ,  KUX ANDREAS

IPC: H01L29/423 ,  H01L29/788 ,  H03K5/159

公开(公告)号：DE50301046D1

公开(公告)日：2005-09-29

申请号：DE50301046

申请日：2003-01-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FISCHER JUERGEN ,  PALM HERBERT ,  PUESCHNER FRANK ,  WILLER JOSEF

IPC: G06K19/077

Abstract: The structure includes a cover (20) over a recess (11). When the cover (20) is connected, the substrate (30) is held in the recess, along the base (12, 14, 15).

公开(公告)号：DE50004667D1

公开(公告)日：2004-01-15

申请号：DE50004667

申请日：2000-09-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRUECKLMEIER ERIC-ROGER ,  PALM HERBERT ,  KUX ANDREAS

IPC: G06K19/073 ,  G07C9/00 ,  G07F7/10

Abstract: The access time for the use of an electronic device, for example a chip, is prolonged after each unauthorized access attempt. The access time is determined by the time for the matching of the turn-on voltages of two floating gate cells. Before an access attempt, the turn-on voltage of one cell is set to a predefined initial value and the turn-on voltage of the other cell is set to a value which is higher in comparison and which is increased after each unauthorized access.

公开(公告)号：DE59904556D1

公开(公告)日：2003-04-17

申请号：DE59904556

申请日：1999-09-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PALM HERBERT ,  SMOLA MICHAEL ,  WALLSTAB STEFAN

IPC: G01R31/28 ,  G01R31/317 ,  H01L21/822 ,  G01R31/3185 ,  H01L21/82 ,  H01L27/04

Abstract: The inventive circuit configuration has a plurality of function blocks (FB1...FBn), each function block being connected to at least one of the other function blocks and at least a portion of these connections being provided in the form of an interlocking element (SFF1...SFFm), which can be switched from normal mode to a test mode by means of an activation line (scan enable) and which has an additional data input and data output. These additional data inputs and data outputs are interconnected by data line sections (DL1...DLl) in such a way that the interlocking elements (SFF1...SFFm) form a shift register, which in turn forms a scan path. At least one electrically programmable fuse element (SE) is arranged along the activation line (scan enable) and/or the data line sections (DL1...DLl). This fuse element either interrupts the line concerned or connects it with a defined potential.

公开(公告)号：ES2179683T3

公开(公告)日：2003-01-16

申请号：ES99953634

申请日：1999-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REINER ROBERT ,  SMOLA MICHAEL ,  PALM HERBERT

IPC: H02M3/07

Abstract: The power supply device has a temporary energy store, a main energy store, and a switching device. The switching device has three switching states. The temporary energy store is connected in the first switching state to a power supply input and is connected in the second switching state to the main energy store, which is connected to a power supply output. An energy discharge device is connected to the temporary energy store in the third switching state of the switching device which follows directly the second switching state.

公开(公告)号：AU2002233313A1

公开(公告)日：2002-09-12

申请号：AU2002233313

申请日：2002-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PALM HERBERT ,  WOHLRAB ERDMUTE ,  TADDIKEN HANS

IPC: G04F10/10 ,  G04F1/00 ,  G07F1/00 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

Abstract: A time recording device employs a floating gate cell, wherein an ON layer structure or an ONO layer structure is provided between floating gate and control gate. A charge injection unit is provided to inject charges into the floating gate electrode and into the nitride layer of the ON structure or the ONO structure by applying a voltage or voltage pulses to the control gate electrode, a center of concentration of the charges injected into the nitride layer being located at the interface between oxide layer and nitride layer of the layer sequence. The time recording device also includes a unit for recording a time which has elapsed since charge injection on the basis of changes in the transmission behavior of the channel region caused by a shift in the center of concentration of the charges in the nitride layer away from the interface.

公开(公告)号：DE59901961D1

公开(公告)日：2002-08-08

申请号：DE59901961

申请日：1999-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REINER ROBERT ,  SMOLA MICHAEL ,  PALM HERBERT

IPC: H02M3/07

Abstract: The power supply device has a temporary energy store, a main energy store, and a switching device. The switching device has three switching states. The temporary energy store is connected in the first switching state to a power supply input and is connected in the second switching state to the main energy store, which is connected to a power supply output. An energy discharge device is connected to the temporary energy store in the third switching state of the switching device which follows directly the second switching state.

公开(公告)号：AT220259T

公开(公告)日：2002-07-15

申请号：AT99953634

申请日：1999-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： REINER ROBERT ,  SMOLA MICHAEL ,  PALM HERBERT

IPC: H02M3/07

Abstract: The power supply device has a temporary energy store, a main energy store, and a switching device. The switching device has three switching states. The temporary energy store is connected in the first switching state to a power supply input and is connected in the second switching state to the main energy store, which is connected to a power supply output. An energy discharge device is connected to the temporary energy store in the third switching state of the switching device which follows directly the second switching state.